AGM-Semi-AGM628M
| Part # | AGM-Semi-AGM628M |
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AGM628M
● General Description
Product Summary
The AGM628M combines advanced trench
MOSFET technology with a low resistance
to provide extremely low R
DS(ON)
.
BVDSS
60V
RDSON
ID
6.8A
-5.7A
package
device is
This
protection applications.
● Features
ideal for load switch and battery
27mΩ
53mΩ
-60V
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
Low
SOP8 Pin Configuration
■
■
■
Low Gate Charge for fast switching
Low Thermal resistance
D1
D2
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
G1
G2
POL application
S1
S2
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
–mm
–mm
AGM628M
AGM628M
SOP8
3000
Table 1.
Absolute Maximum Ratings (T
A
=25
)
℃
Rating
N-Ch
P-Ch
Units
Symbol
Parameter
Drain-Source Voltage (
V
GS=
0V
）
V
V
A
A
V
DS
V
GS
60
±20
6.8
3.2
9.6
3.5
1.4
22
-60
Gate-Source Voltage (
V
DS=
0V)
±20
-5.7
-2.6
-7.5
(Note 1)
Drain Current-Continuous(T
c
=25
℃
)
I
D
Drain Current-Continuous(Tc=100
℃
)
Drain Current-Continuous@ Current-Pulsed
(Note 2)
A
IDM (pluse)
Total Power Dissipation(T
c
=25
℃
)
W
W
3.5
P
D
Total Power Dissipation(Tc=100
℃
)
1.4
(Note 3)
Avalanche energy
mJ
18
EAS
Operating Junction and Storage Temperature Range
-55 To 150
-55 To 150
℃
TJ,TSTG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
℃
/W
R
θJA
R
θJC
—
—
85
36
℃
/W
1
VER2.5
AGM628M
Table 3. N- Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
60
—
V
DSS
=60V,V =0V
GS
μA
nA
I
DSS
=±20V,V =0V
DS
—
±
100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.0
1.6
35
2.5
—
V
S
=5V,I =6A
Forward Transconductance
DS
GS
GS
D
FS
—
—
—
=10V, I
=6A
D
mΩ
mΩ
27
36
40
50
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=5A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
pF
pF
iss
916
Output Capacitance
oss
rss
VDS=30V,VGS=0V,
F=1MHZ
42
38
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
4.5
18
nS
nS
nS
nS
nC
nC
nC
d(on)
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=30V,
RL=2.5
Ω,
RGEN=3
Ω
14.5
18
d(off)
t
f
Q
Q
g
19
VGS=10V, VDS=30V,
ID=3A
gs
gd
4.2
2.5
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
I
6.8
1.2
A
SD
Forward on Voltage
VGS=0V,IS=2A
V
SD
0.8
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=2A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM628M
Table 3. P-Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-60
DSS
V
μA
nA
—
—
=-60V,V =0V
GS
-1
—
—
DSS
=±20V,V =0V
DS
±100
I
GSS
—
V
g
Gate Threshold Voltage
V
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-1.1
—
-1.7
32
-2.5
—
V
S
=-10V,I =-2A
Forward Transconductance
FS
DS
GS
GS
D
=-10V, I
=-6A
D
—
—
53
67
67
88
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-5A
D
Dynamic Characteristics
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
—
—
—
1200
75
pF
pF
pF
VDS=-30V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
58
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Switching Times
Turn-on Delay Time
—
7
—
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
t
r
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=-10V,VDS=-30V,
RGEN=3Ω
t
d(off)
t
f
Q
g
25
5.8
3.1
VGS=-10V,
VDS=-30V, ID=-3A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
-0.8
—
SD
-5.7
-1.2
—
A
Forward on Voltage
VGS=0V,IS=-2A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
IF=-2A , dI/dt=100A/µs ,
rr
TJ=25
℃
nc
—
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes
Notes2.RepetitiveRating
:
P
ulsewidthlimitedbymaximumjunctio
n
t
emperature
3.EAS condition: T
=25
℃
J
3
VER2.5
AGM628M
N-Channel Typical Characteristics
35
33
30
28
25
12
I
D
=4A
V
GS
=10V
V
GS
=7
10
8
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
6
4
2
0
0
0.5
1
1.5
2
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
I
D
=4A
10
8
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.5
1.5
2.0
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
4
VER2.5
AGM628M
10000
1000
100
10.00
1.00
0.10
0.01
F=1.0MHz
Ciss
100us
1ms
10ms
100ms
Coss
Crss
DC
T
A
=25
o
C
Single Pulse
10
0.01
0.1
1
10
100
1
1
5
9
13
17
21
25
V
DS
Drain to Source Voltage(V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
5
VER2.5
AGM628M
P-Channel Typical Characteristics
160
120
80
12
I
D
=-3A
V
GS
=-3V
10
8
6
V
GS
=-10V
4
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
2
0
40
0
0.5
1
1.5
2
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
I
D
=-3A
10
8
6
6
T
J
=150
℃
T
J
=25
℃
4
4
2
2
0
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2 . 5
1.5
2 . 0
1 . 5
1 . 0
0 . 5
1
0.5
0
– 5 0
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
o
C)
T
J
, J
u n c t i o n
T e m
p
℃
e
)
r
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
6
VER2.5
AGM628M
P-Channel Typical Characteristics
10000
1000
100
10.00
1.00
0.10
0.01
F=1.0MHz
Ciss
100us
1ms
10ms
100ms
Coss
Crss
DC
T
A
=25
o
C
Single Pulse
10
0.01
0.1
1
10
100
1
1
5
9
13
17
21
25
-V
DS
Drain to Source Voltage(V)
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
7
VER2.5
AGM628M
●Dimensions(SOP8)
SYMBOL
min
TYP
max
SYMBOL
min
max
A
4.80
0.37
5.00
0.47
C
1.30
0.55
0.55
0.05
0.19
1.50
0.75
0.65
0.20
0.23
A1
A2
A3
B
C1
C2
C3
C4
D
1.27
0.41
0.20
1.05
5.80
3.80
6.20
4.00
B1
B2
5.00
D1
0.40
0.62
8
VER2.5
AGM628M
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on June 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
9
VER2.5
