AGM-Semi-AGMH022N10C
| Part # | AGM-Semi-AGMH022N10C |
Download  | AGM-Semi-AGMH022N10C |
AGMH022N10C
●
General Description
Product Summary
The AGMH022N10C combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
This device is ideal
protection applications.
switch and battery
for load
BVDSS
RDSON
ID
100V
2.2mΩ
220A
●
Features
■
Advance high cell density Trench technology
TO-220 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
■
Low Thermal resistance
100%
Avalanche tested
100% DVDS tested
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—
AGMH022N10C AGMH022N10C
TO-220
—
1000
Tabl
e
1
.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
100
±20
Gate-Source Voltage (VDS=0V)
(Note 1)
220
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
132
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
880
DM (pluse)
w
w
300
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
150
(Note 3)
EAS
T ,T
mJ
℃
1800
-55 To 175
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
Thermal Resistance Junction-Case
1
R
—
0.5
θJC
℃
/W
1
VER2.66
AGMH022N10C
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TC=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
100
—
V
DSS
DSS
=100V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
FS
2.5
—
3.5
4.5
—
V
S
g
=5V,I =10A
D
Forward Transconductance
Drain-Source On-State Resistance
DS
GS
35
R
=10V, I
=50A
D
—
DS(on)
mΩ
2.2
2.85
Dynamic Characteristics
—
—
—
—
—
—
11500
1480
75
C
C
C
Input Capacitance
iss
pF
pF
pF
VDS=50V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
25
75
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=50V,
ID=100A,
RGEN=1.6Ω
d(off)
89
29
158
52
29
t
f
Q
g
VGS=10V, VDS=50V,
ID=100A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
I
220
1.2
A
SD
Forward on Voltage
VGS=0V,IS=20A
V
SD
—
75
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
IF=20A , dI/dt=100A/µs ,
nc
TJ=25
℃
185
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.66
AGMH022N10C
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
3
VER2.66
AGMH022N10C
Typical Electrical and Thermal Characteristics
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
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VER2.66
AGMH022N10C
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
5
VER2.66
AGMH022N10C
TO220 PACKAGE INFORMATION
A
E
A1
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
b
4.370
1.250
2.150
0.700
1.170
0.450
15.100
8.800
5.500
9.700
7.000
4.570
4.700
1.400
2.550
0.950
1.470
0.600
16.100
9.400
1.300
©ꢀ
2.350
0.800
1.270
b1
c
©ꢂ
0.500
E3
D
15.600
9.100
A2
D1
D2
E
6.300 REF
10.000
7.600 REF
2.540 BSC
5.080 BSC
13.500
3.100
b1
b
10.300
E3
e
e1
L
13.200
13.800
3.400
6.750
3.800
3.000
e
c
L1
H
e1
6.250
3.400
2.600
6.500
(Bottom View)
(Top View)
¶
Q
3.600
2.800
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©ꢀ
©ꢁ
©ꢂ
6
VER2.66
AGMH022N10C
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the fourth version issued on July 20th, 2023. This document
replaces all
previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.66
