AGM-Semi-AGMH022P10H
| Part # | AGM-Semi-AGMH022P10H |
Download  | AGM-Semi-AGMH022P10H |
AGMH022P10H
● General Description
Product Summary
The AGMH022P10H combines advanced trench
MOSFET technology with a low resistance
to provide extremely low R
DS(ON)
.
BVDSS
RDSON
20mΩ
ID
package
This device is
ideal for load switch and battery
-100V
-65A
protection applications.
● Features
TO-263
Pin Configuration
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
■
■
■
■
■
Low
Low Gate Charge for fast switching
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
D
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
G
S
POL application
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AGMH022P10H AGMH022P10H
TO-263
330mm
25mm
800
Tabl
e
1
.
Absolute Maximum Ratings (Tc=25
)
℃
Symbol
VDS
Parameter
Value
-100
Unit
Drain-Source Voltage (VGS=0V
）
V
V
VGS
Gate-Source Voltage (VDS=0V)
±20
-65
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
-41
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
-260
250
100
465
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
Avalanche energy
mJ
℃
T ,T
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
R
θJA
℃
/W
℃
/W
—
—
62
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
0.5
1
VER2.5
AGMH022P10H
Table 2. P-Channel Electrical Characteristics (TJ=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
DSS
-100
—
—
—
—
V
μA
nA
=-100V,V =0V
GS
1
DSS
=±20V,V =0V
DS
±100
I
—
GSS
V
g
Gate Threshold Voltage
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-2
—
-4
—
-3
V
S
=-5V,I =-5A
Forward Transconductance
FS
DS
D
18
20
=-10V, I
=-10A
RDS(on) Drain-Source
On-State Resistance
GS
D
30
—
mΩ
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
4276
336
25
pF
pF
pF
VDS=-50V,VGS=0V,
F=1MHZ
oss
Reverse Transfer Capacitance
Gate resistance
rss
VGS=0V
—
—
Rg
Switching Times
Turn-on Delay Time
19
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
15
18
ID =-20A
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
r
VDS = -50V
VGS = -10V
RG = 5Ω
t
d(off)
50
t
f
19
Q
g
52.1
16.7
7.1
VGS=-10V,
VDS=-50V, ID=-20A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
—
-65
-1.2
—
SD
A
Forward on Voltage
VGS=0V,IS=-10A
V
SD
V
55
102
ns
t
Reverse Recovery Time
Reverse Recovery Charge
rr
IS=-10A, VDD=-50V
dI/dt=100A/μs
nc
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes2.RepetitiveRating
:
P
ulsewidthlimitedbymaximumjunctio
n
t
emperature
Notes
3.EAS condition: T
=25
℃
J
2
VER2.5
AGMH022P10H
Characteristics Curve
：
Typ. output characteristics
Typ. drain-source on resistance
-I
D
=f(-V
DS
)
R
DS(on)
=f(-I
D
)
Typ. transfer characteristics
Drain-source on-state resistance
R
DS(on)
= f(T
j
); I
D
=-10A; V
GS
=-10V
-I
D
=f(-V
GS
)
3
VER2.5
AGMH022P10H
Gate Threshold
V
o
ltage
–
V
TH
=f(T
j
); I
D
=-250uA
Drain-source breakdown voltage
-V
BR(DSS)
=f(T
j
); I
D
=-250uA
1.3
1.2
1.1
1
V
GS
= V
DS
I
D
= 250
μ
A
0.9
0.8
0.7
0.6
0.5
0.4
-50 -25
0
25 50 75
100 125 150
T
J
,Junction Temperature(
℃
)
Typ. gate charge
-V
GS
=f(Q
g
) ; I
D
=-20A
Typ. capacitances
C =f(-V
DS
); V
GS
=0
V
; f
=
1MHz
4
VER2.5
AGMH022P10H
Power Dissipation
Maximum Drain Current
P
tot
=f(T
C
)
-I
D
=f(T
C
)
Safe operating area
Body Diode Forward
V
o
ltage
V
a
riation
-I
D
=f(-V
DS
)
–
I
F
=f(-V
DS
)
5
VER2.5
AGMH022P10H
Test Circuit and Waveform
:
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
7
VER2.5
AGMH022P10H
TO-263 PACKAGE INFORMATION
A
A2
D
MILLIMETER
Typ.
SYMBOL
©ꢂ
MIN
MAX
A
A1
A2
A3
b
4.370
0.000
1.220
2.490
0.700
1.170
0.300
9.860
4.570
4.770
0.250
1.420
2.890
0.960
1.470
0.530
10.360
1.270
2.690
A1
A3
©ꢀ
0.810
1.270
b1
c
c
0.380
D
10.160
8.400 REF
7.073 REF
D1
D2
E
e
b
0.25 BSC
8.500
1.070
8.700
1.270
8.900
1.470
©
E1
e
2.540 TYP
15.100
1.550
L
14.700
1.400
2.000
ꢃe
15.500
1.700
2.600
ꢄe
L1
L2
©
2.300
D1
b1
ꢅe7<3
ꢅe7<3
ꢁe7<3
©ꢀ
©ꢂ
©ꢁ
SEATING PLANE
S
Y
B
M
B
A
MILLIMETER
THERMAL PAD
c2
E2
O
L
A
MIN.
4.47
0.00
0.71
1.17
0.360
1.17
8.70
7.10
9.90
8.08
10.00
2.44
15.00
2.25
1.10
—
NOMINAL
4.57
MAX.
4.67
0.25
0.91
1.37
0.500
1.37
9.30
7.80
10.30
8.68
10.30
2.64
15.60
2.80
1.60
1.78
A
A1
b
0.10
0.81
b2
c
1.27
0.381
1.27
c2
D
b2
E1
c
9.00
D1
E
7.44
10.11
8.38
E1
E2
e
10.16
2.54
b
e
0.254
B
A
H
15.28
2.54
L
L1
L2
L3
Ɵ
1.35
GAUGE PLANE
—
0.254 BSC
—
0°
8°
Ɵ
L
E
8
VER2.5
AGMH022P10H
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on July 20th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
9
VER2.5
