AGM-Semi-AGMH605C

AGMH605C  

●

General Description  

Product Summary  

The AGMH605C

 

combines advanced trench  

MOSFET technology with a low resistance package  

to provide  

extremely low R

DS(ON)  

.

This device is ideal  

switch and battery  

BVDSS  

RDSON  

ID  

for load  

protection applications.  

68V  

4.7mΩ  

105A  

●

Features  

■

Advance high cell density Trench technology  

TO-220 Pin Configuration  

■

■

Low R

DS(ON)

to minimize conductive loss  

Low Gate Charge for fast switching  

■

■

■

Low Thermal resistance  

100

%

Avalanche tested  

100% DVDS tested  

●

Application  

■

Electronic Ballast  

■

Electronic Transformer  

■

Switch Mode Power Supply  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

—-  

—-  

AGMH605C  

AGMH605C  

TO-220  

1000  

Tabl

e

1

.  

Absolute Maximum Ratings (Tc=25  

)

℃

Symbol  

Parameter  

Drain-Source Voltage (VGS=0V

）

 

Value  

Unit  

VDS  

VGS  

V

V

68  

Gate-Source Voltage (VDS=0V)  

±20  

105  

(Note 1)  

A

A

A

Drain Current-Continuous(Tc=25

℃

)  

I

D

c

Drain Current-Continuous(T

 

=100

℃

)  

65  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

DM (pluse)  

420  

114  

w

w

Maximum Power Dissipation(Tc=25

℃

)  

Maximum Power Dissipation(Tc=100

℃

)  

P

D

45  

(Note 3)  

EAS  

T ,T  

mJ  

Avalanche energy  

94  

J

STG  

Operating Junction and Storage Temperature Range  

℃

-55 To 150  

Tabl

e

2

.  

Thermal Characteristic  

Symbol  

Typ  

Max  

Unit  

Parameter  

1

—  

—  

62  

R

θJA  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient (Steady State)  

1

R

1.1  

θJC  

Thermal Resistance Junction-Case  

1

VER2.6  

AGMH605C  

Tabl

e

3

.  

Symbol  

On/Off States  

Electrical Characteristics (TJ=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

BV  

V

GS  

V

DS  

V

GS  

=0V I

 

=250μA  

D

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

DSS  

DSS  

68  

—  

—  

—  

—  

1

V

=68V,V =0V  

GS  

μA  

I

I

=±20V,V =0V  

DS  

—  

—  

nA  

±

GSS  

100  

V

V

V

V

=V ,I

 

=250μA  

Gate Threshold Voltage  

DS GS

 

D  

GS(th)  

2.0  

—  

2.8  

37  

4.0  

—  

V

S

g

FS  

=5V,I =10A  

D

Forward Transconductance  

Drain-Source On-State Resistance  

DS  

GS  

=10V, I

 

=20A  

R

D

—  

DS(on)  

mΩ  

4.7  

5.7  

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

C

C

C

Input Capacitance  

iss  

pF  

pF  

pF  

1790  

500  

32  

VDS=30V,VGS=0V,  

F=1MHZ  

Output Capacitance  

oss  

rss  

Reverse Transfer Capacitance  

=0V,  

=0V,f=1.0MHz  

VGS  

VDS  

Rg  

Gate resistance  

0.1  

2.7  

10  

Ω

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

18  

3

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VDD=30V, VGS=10V,  

RD=5

Ω,RGEN=10Ω  

d(off)  

55  

17  

26  

t

f

Q

g

VGS=10V, VDS=30V,  

ID=20A  

Q

gs  

gd  

7.5  

6.6  

Q

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

—  

—  

—  

—  

I

105  

1.2  

A

SD  

Forward on Voltage  

VGS=0V,ISD=20A  

V

SD  

V

ns  

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

—  

—  

—  

—  

—  

VDD=20V,IF=20A ,  

nc  

dI/dt=100A/µs , TJ=25

℃

 

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃  

J

2

VER2.6  

AGMH605C  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

Fig1. Typical Output Characteristics  

Fig3. Normalized On-Resistance Vs. Temperature  

Fig5. Typical.Capacitance  

Fig2. Typical Transfer Characteristics  

Fig4. Typical Source-Drain Diode Forward Voltage  

Fig6. Typical.Gate Charge  

3

VER2.6  

AGMH605C  

Fig7. Safe Operating Area  

Fig8. Normalized transient thermal impedance  

4

VER2.6  

AGMH605C  

TO-220 PACKAGE INFORMATION  

A

E

A1  

MILLIMETER  

Typ.  

SYMBOL  

MIN  

MAX  

A

A1  

A2  

b

4.370  

1.250  

2.150  

0.700  

1.170  

0.450  

15.100  

8.800  

5.500  

9.700  

7.000  

4.570  

4.700  

1.400  

2.550  

0.950  

1.470  

0.600  

16.100  

9.400  

1.300  

©ꢀ  

2.350  

0.800  

1.270  

b1  

c

©ꢂ  

0.500  

E3  

D

15.600  

9.100  

A2  

D1  

D2  

E

6.300 REF  

10.000  

7.600 REF  

2.540 BSC  

5.080 BSC  

13.500  

3.100  

b1  

b

10.300  

E3  

e

e1  

L

13.200  

13.800  

3.400  

6.750  

3.800  

3.000  

e

c

L1  

H

e1  

6.250  

3.400  

2.600  

6.500  

(Bottom View)  

(Top View)  

¶

Q

3.600  

2.800  

ꢃe7<3  

ꢃe7<3  

ꢂe7<3  

©ꢀ  

©ꢁ  

©ꢂ  

5

VER2.6  

AGMH605C  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its

 

scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the second version issued on August 20th, 2023. This document  

replaces all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

6

VER2.6