ALLPOWER-ShenZhen-Quan-Li-Semiconductor-AP4846
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AP4846
N-Channel Power Mosfet
Feature
⚫
60V,7A
R
DS
（
）
<20
m
Ω＠
V
GS
=10V TYP:15 m
Ω
）
<25
m
Ω＠
V
GS
=4.5V TYP:19 m
Ω
ON
R
DS
（
ON
Schematic diagram
⚫
⚫
⚫
Trench DMOS Power MOSFET
Fast Switching
Exceptional on-resistance and maximum DC current capability
XXXXX
Application
4846
⚫
⚫
⚫
DC/DC Converter
Load Switch for Portable Devices
Battery Switch
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity (PCS)
4846
AP4846
SOP-8
13 inch
–
4000
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
V
GS
I
D
Value
Unit
V
Drain-Source Voltage
Gate-Source Voltage
60
±
20
7
V
Continuous Drain Current (T
a
=25
℃
)
Continuous Drain Current (T
a
=100
℃
)
Pulsed Drain Currenr
(1)
A
I
D
5.4
A
I
DM
28
A
Power Dissipation
P
D
2
W
Thermal Resistance from Junction to Ambient
Junction
T
e
mperature
R
θJA
T
J
62.5
150
℃
/W
℃
℃
Storage
T
e
mperature
T
STG
-55~ +150
All Power Semiconductor Co.,Ltd
V1.0
1
AP4846
N-Channel Power Mosfet
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(2)
V
(BR)DSS
I
DSS
V
GS
= 0
V
,
I
D
=250µA
60
–
–
–
–
1
V
µA
nA
V
V
DS
=60
V
,
V
GS
= 0V
V
GS
=
±
20
V
,
V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10
V
,
I
D
=7A
I
GSS
–
–
±100
2.5
20
V
GS(th)
1
–
1.6
15
19
Drain-source on-resistance
(2)
R
DS(on)
mΩ
V
GS
=4.5
V
,
I
D
=5A
–
25
Dynamic characteristics
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
2600
125
–
–
–
Output Capacitance
V
DS
=25
V
,
V
GS
=0
V
, f
=
1MHz
pF
Reverse Transfer Capacitance
105
Switching characteristics
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
4
8
–
–
–
–
–
–
–
Turn-on rise time
V
DD
=30V
，
ID=7A
V
GS
=10
V
,
R
G
=6
Ω
ns
Turn-off delay time
27
20
51
8
Turn-off fall time
T
o
tal Gate Charge
Qg
Qgs
Qgd
VDS=30
V
,
ID=7A
VGS=10V
Gate-Source Charge
Gate-Drain Charge
nC
8
Source-Drain Diode characteristics
Diode Forward voltage
(2)
Diode Forward current
(3)
Reverse recovery time
Reverse recovery charge
V
DS
I
S
V
GS
=0
V
,
I
S
=5A
–
–
–
1.2
7
V
A
–
Trr
Qrr
Is=7A,V
GS
=0
V
,dI
F
/dt=100A/us
Is=7A,V
GS
=0
V
,dI
F
/dt=100A/us
21
18
ns
nC
Notes:
1. Repetitive Rating: pulse width limited by maximum junction temperature
2. Pulse
T
e
st:
pulse width≤300μs, duty cycle≤2%
3. Surface Mounted on FR4 Board,t
≤
10 sec
All Power Semiconductor Co.,Ltd
V1.0
2
AP4846
N-Channel Power Mosfet
All Power Semiconductor Co.,Ltd
V1.0
3
AP4846
N-Channel Power Mosfet
Typical Characteristics
(@ T
J
= 25°C, unless otherwise specified.)
30
10
8
10V
V
DS
= 5.0V
V
GS
= 4.0V
5.0V
4.5V
V
GS
= 3.5V
24
18
12
6
T
J
= 125°C
6
4
V
GS
= 3.0V
T
J
= 25°C
V
GS
= 2.7V
V
GS
= 2.5V
2
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Figure 2:
Transfer Characteristics
Figure 1:
Output Characteristics
100
35
30
25
20
15
10
I
D
= 7.0A
80
60
40
20
0
V
GS
= 4.5V
V
GS
= 10V
0
2
4
6
8
10
0
3
6
9
12
15
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Figure 4:
On-Resistance vs. Gate-Source Voltage
Figure 3:
On-Resistance vs. Gate-Source Voltage
2
1.6
1.2
0.8
0.4
0
100
10
V
GS
= 10V,
I
D
= 7.0A
T
J
= 125°C
V
GS
= 4.5V,
I
D
= 5.0A
1
T
J
= 25°C
0.1
0.01
-55
-25
5
35
65
95
125
155
0.2
0.4
0.6
0.8
1
1.2
T
J
– Temperature (
°
C)
V
SD
– Source-to-Drain Voltage (V)
Figure 5:
On-Resistance vs. Junction Temperature
Figure 6:
Source-Drain Diode Forward Voltage
All Power Semiconductor Co.,Ltd
V1.0
4
AP4846
N-Channel Power Mosfet
Typical Characteristics
(@ T
J
= 25°C, unless otherwise specified.)
10000
10
8
V
DS
= 10V
D
= 7.0A
I
C
iss
1000
6
4
C
oss
100
C
rss
2
10
0
0
12
24
36
48
60
0
6
12
18
24
30
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
Figure 8:
Gate Charge Characteristics
Figure 7:
Capacitance Characteristics
2.5
2
8
6.4
4.8
3.2
1.6
0
1.5
1
0.5
0
0
30
60
90
120
150
0
30
60
90
120
150
T
A
– Ambient Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Figure 10:
Power Derating
Figure 9:
Current Derating
50
40
30
20
10
0
100
1.0
s
10
s
10
1
100
s
1.0ms
10ms
100ms
1.0s
0.1
0.01
T
J(Max)
= 150
°
C
T
A
= 25
°
C
DC
Single Pulse , V
GS
= 10V
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Pulse Width (s)
V
DS
– Drain-to-Source Voltage (V)
Figure 11:
Single Pulse Power, Junction-to-Ambient
Figure 12:
Safe Operating Area
All Power Semiconductor Co.,Ltd
V1.0
5
AP4846
N-Channel Power Mosfet
Typical Characteristics
(@ T
J
= 25°C, unless otherwise specified.)
10
1
0.1
P
DM
t
1
0.01
t
2
δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1. Duty cycle
δ = t
1
/ t
2
2. R
JA
(t) = r(t) * R
JA
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 13:
Normalized Thermal Transient Impedance
All Power Semiconductor Co.,Ltd
V1.0
6
AP4846
N-Channel Power Mosfet
SOP-8 Package Information
All Power Semiconductor Co.,Ltd
V1.0
7
AP4846
N-Channel Power Mosfet
Disclaimer
The information given in this document describes the independent performance of the product, but
similar performance is not guaranteed under other working conditions, and cannot be guaranteed
when installed with other products or equipment. To achieve the required performance of the
product in actual scenarios, the customer should conduct a complete application test to assess the
functionality of the product.
ALLPOWER assumes no responsibility for equipment failures result from using products at values
that exceed the ratings, operating conditions, or other parameters listed in the product
specifications.
The product described in this specification is not applicable for aerospace or other applications
which requires high reliability. Customers using or selling these products for use in medical, life-
saving, or life-sustaining applications do so at their own risk and agree to fully indemnify.
Due to product or technical improvements, the information described or contained herein may be
changed without prior notice.
All Power Semiconductor Co.,Ltd
V1.0
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