ALLPOWER-ShenZhen-Quan-Li-Semiconductor-AP60P20Q

AP60P20Q  

P-Channel Enhancement Mosfet  

Feature  

⚫

-20V,-60A  

R

DS  

R

DS  

（

ON  

（

ON  

⚫

⚫

⚫

Advanced Trench

T

e

chnology  

Lead free product is acquired  

Excellent R

DS  

and Low Gate Charge  

（

）

ON  

Application  

⚫

⚫

⚫

PWM applications  

Load Switch  

Power management  

DFN3

ⅹ

3  

Package Marking and Ordering Information  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

Quantity (PCS)  

60P20Q  

AP60P20Q  

PDFN3X3-8L  

13 inch  

–

5000  

ABSOLUTE MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

V

DS  

V

GS  

I

D  

Value  

-20  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

±

12  

-60  

V

Continuous Drain Current (T

a

=25

℃

)  

Continuous Drain Current (T

a

=100

℃

)  

Pulsed Drain Currenr

(1)  

A

I

D  

-42  

A

I

DM  

-240  

80  

A

Power Dissipation  

P

D  

W

Thermal Resistance from Junction to Case  

Junction

T

e

mperature  

R

θJ

C  

T

J  

1.6  

℃

/W  

℃

℃

150  

Storage

T

e

mperature  

T

STG  

-55~ +150  

All Power Semiconductor Co.,Ltd  

V1.0  

1

AP60P20Q  

P-Channel Enhancement Mosfet  

MOSFET ELECTRICAL CHARACTERISTICS(T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Test Condition  

Min  

Type  

Max  

Unit  

Static Characteristics  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

Gate threshold voltage

(3)  

V

(BR)DSS  

I

DSS  

V

GS

= 0

V

,

I

D

=-250µA  

-20  

–

–

–

1

V

µA  

nA  

V

V

DS

=-20

V

,

V

GS

= 0V  

V

GS

=

±

12

V

,

V

DS

= 0V  

V

DS

=V

GS

, I

D

=-250µA  

V

GS

=-4.5

V

,

I

D

=-20A  

V

GS

=-2.5

V

,

I

D

=-10A  

–

I

GSS  

–

–

±100  

1.0  

7.0  

9.0  

V

GS(th)  

0.35  

0.6  

5.8  

7.0  

–

–

Drain-source on-resistance

(3)  

R

DS(on)  

mΩ  

Dynamic characteristics  

Input Capacitance  

C

iss  

C

oss  

C

rss  

–

–

–

3600  

572  

–

–

–

Output Capacitance  

V

DS

=-10

V

,

V

GS

=0

V

, f

=

1MHz  

pF  

Reverse Transfer Capacitance  

440  

Switching characteristics  

Turn-on delay time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

18  

43  

85  

23  

55  

10  

15  

–

–

–

–

–

–

–

Turn-on rise time  

V

DD

=-10

V

,

I

D

=-15A, R

L

=0.5

Ω  

V

GS

=-4.5

V

,

R

G

=3

Ω  

ns  

Turn-off delay time  

Turn-off fall time  

T

o

tal Gate Charge  

Qg  

Qgs  

Qgd  

VDS=-10

V

,

I

D=-20A,  

VGS=-4.5V  

Gate-Source Charge  

Gate-Drain Charge  

nC  

Source-Drain Diode characteristics  

Diode Forward voltage

(2)  

Diode Forward current

(3)  

V

DS  

I

S  

V

GS

=0

V

,

I

S

=-20A  

–

–

–

–

-1.2  

-60  

V

A

Notes:  

1. Repetitive Rating: pulse width limited by maximum junction temperature  

2. Pulse

T

e

st: p

ulse width≤300μs, duty cycle≤2%  

3. Surface Mounted on FR4 Board,t

≤

10 sec  

All Power Semiconductor Co.,Ltd  

V1.0  

2

AP60P20Q  

P-Channel Enhancement Mosfet  

Test Circuit  

All Power Semiconductor Co.,Ltd  

V1.0  

3

AP60P20Q  

P-Channel Enhancement Mosfet  

PDFN3X3-8L Package Information  

All Power Semiconductor Co.,Ltd  

V1.0  

4