Alpha—Omega-Semicon-AO3413
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AO3413
20V P-Channel MOSFET
General Description
Features
The AO3413 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
V
DS
= -20V
I
D
= -3A
R
DS(ON)
< 80m
Ω
R
DS(ON)
< 100m
Ω
R
DS(ON)
< 130m
Ω
(V
GS
= -4.5V)
(V
GS
=- 4.5V)
(V
GS
= -2.5V)
(V
GS
= -1.8V)
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Maximum
Units
Symbol
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
-20
±8
V
V
T
A
=25
°
C
T
A
=70
°
C
-3
Continuous Drain
Current
A
I
D
-2.4
A
Pulsed Drain Current
B
I
DM
P
D
-15
T
A
=25
°
C
T
A
=70
°
C
1.4
W
°C
Power Dissipation
A
0.9
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
100
63
125
80
R
θ
JL
Page 1 of 5
Rev 9: July 2010
AO3413
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-20
V
V
DS
=-20V, V
GS
=0V
-1
-5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250
µ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1
nA
V
V
GS(th)
I
D(ON)
-0.4
-15
-0.65
A
56
80
80
115
100
130
m
Ω
T
J
=125
°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-2.5V, I
D
=-2.6A
V
GS
=-1.8V, I
D
=-1A
V
DS
=-5V, I
D
=-3A
I
S
=-1A,V
GS
=0V
70
m
Ω
m
Ω
S
85
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
12
-0.7
-1
V
Maximum Body-Diode Continuous Current
-1.4
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
560
80
745
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
V
GS
=0V, V
DS
=0V, f=1MHz
15
23
11
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3A
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.3
Ω
,
R
GEN
=6
Ω
t
D(off)
t
f
53
56
t
rr
I
F
=-3A, dI/dt=100A/
µ
s
I
F
=-3A, dI/dt=100A/
µ
s
37
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
nC
27
A: The value of R
θ
JA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. copper, in a still air environment with T
A
=25
°
C. The
value in any
given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300
µ
s pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Page 2 of 5
Rev 9: July 2010
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
15
10
5
V
DS
=-5V
-3.0V
-4.5V
-2.5V
-2.0V
125
°
C
V
GS
=-1.5V
25
°
C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
150
130
110
90
1.6
1.4
1.2
1
V
GS
=-2.5V
I
D
=-2.6A
V
GS
=-1.8V
V
GS
=-4.5V
I
D
=-3A
V
GS
=-1.8V
I
D
=-1A
V
GS
=-2.5V
V
GS
=-4.5V
70
50
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
180
1E+02
1E+01
I
D
=-3A
160
140
120
100
80
1E+00
125
°
C
1E-01
1E-02
1E-03
1E-04
1E-05
125
°
C
25
°
C
60
25
°
C
40
0
2
4
6
8
-V
GS
(Volts)
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
Figure 5: On-Resistance vs. Gate-Source Voltage
Page 3 of 5
Rev 9: July 2010
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
V
DS
=-10V
I
D
=-3A
1200
1000
800
600
400
200
0
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
5
10
-V
DS
(Volts)
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
1000
T
J(Max)
=150
°
C
T
A
=25
°
C
R
DS(ON)
limited
10
µ
s
100
10
1
100
µ
s
1ms
10ms
0.1s
1s
T
J(Max)
=150
°
C
T
A
=25
°
C
0.10
DC
0.1
0.01
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=125
°
C/W
1
0.1
P
D
0.01
T
on
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Page 4 of 5
Rev 9: July 2010
AO3413
Gate Charge Test Circuit & Waveform
Vgs
Q
g
g
–
-10
V
V
–
VD
C
C
Q
g
s
Q
g
gd
+
Vds
V
D
C
C
+
DUT
Vgs
Ig
C
h
ar
g
g
e
e
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
f
t
d
(
t
d(on)
t
r
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
DUT
Vgs
t
rr
Vds –
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Ig
Page 5 of 5
Rev 9: July 2010
