Alpha—Omega-Semicon-AO4402
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AO4402
20V N-Channel
MOSFET
General Description
Product Summary
V
DS
20V
The AO4402 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This
device is ideal for load switch
and battery protection applications.
I
D
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
20A
< 5.5m
Ω
< 7m
Ω
100% UIS Tested
100% R
g
Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
20
±12
20
V
V
V
GS
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
I
D
16
A
Pulsed Drain Current
C
I
DM
140
Avalanche Current
C
I
AS
, I
AR
E
AS
, E
AR
57
162
A
Avalanche energy L=0.1mH
C
T
A
=25
°
C
Power Dissipation
B
mJ
3.1
P
D
W
°C
T
A
=70
°
C
2
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
t
≤
10s
R
θ
JA
Steady-State
Steady-State
59
75
R
θ
JL
16
24
Rev 1: Nov 2010
Page 1 of 6
AO4402
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
20
V
V
DS
=20V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=4.5V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.6
nA
V
V
GS(th)
I
D(ON)
0.5
1
140
A
4.6
5.8
5.5
105
0.6
5.5
7
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=2.5V, I
D
=18A
7
m
Ω
S
V
DS
=5V, I
D
=20A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=1A,V
GS
=0V
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
3080 3860 4630
pF
pF
pF
Ω
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
520
350
0.6
740
580
1.4
960
810
2.1
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=10V, I
D
=20A
SWITCHING PARAMETERS
Q
g
(4.5V) Total
Gate Charge
28
7
36
9
43
11
17
nC
nC
nC
ns
ns
ns
ns
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7
12
7
V
GS
=10V, V
DS
=10V, R
L
=0.5
Ω
,
R
GEN
=3
Ω
8
t
D(off)
t
f
70
18
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
13
29
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17
36
20
43
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C
, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C
. Ratings are based on low frequency and duty
cycles to keep
initialT
J
=25
°
C
.Maximum avalanche
current limited by tester
capability.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C
. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Nov 2010
Page 2 of 6
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
V
DS
=5V
125
°
C
25
°
C
0.5
1
1.5
V
GS
(Volts)
2
2.5
0
1
2
3
4
5
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
10
8
1.4
1.2
1
V
GS
=2.5V
V
GS
=4.5V
6
4
2
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
Temperature (
°
C
)
I
D
(A)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
10
9
1.0E+02
1.0E+01
I
D
=20A
1.0E+00
8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
7
125
°
C
25
°
C
6
5
4
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 1: Nov 2010
Page 3 of 6
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
6000
5000
4000
3000
2000
1000
0
10
V
DS
=10V
I
D
=20A
8
6
4
2
0
C
oss
C
rss
0
5
10
15
20
0
20
40
60
80
100
V
DS
(Volts)
Q
g
(nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000.0
100.0
10.0
1000.0
100.0
10.0
1.0
10ms
0.1
0.0
0.01
0.1
1
10
100
1
10
100
1000
Time in avalanche, t
A
(
µ
s)
Figure 9: Single Pulse Avalanche capability (Note
C)
V
DS
(Volts)
10000
T
A
=25
°
C
1000
100
10
1
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 1: Nov 2010
Page 4 of 6
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=T
on
/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
0.1
R
θ
JA
=75
°
C
/W
P
D
0.01
Single Pulse
0.001
T
on
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Nov 2010
Page 5 of 6
AO4402
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev 1: Nov 2010
Page 6 of 6
