Alpha—Omega-Semicon-AO4606

AO4606  

30V Complementary MOSFET  

General Description  

Product Summary  

The AO4606 uses advanced trench technology  

MOSFETs to provide excellent R

DS(ON)

and low gate  

charge. The complementary MOSFETs may be used to  

form a level shifted high side switch, and for a host of  

other applications.  

N-Channel  

P-Channel  

V

DS

= 30V  

-30V  

I

D

= 6A

 

(V

GS

=10V)  

R

DS(ON)  

-6.5A (V

GS

=-10V)  

R

DS(ON)  

< 30m

ꢀ

(V

GS

=10V)  

< 42m

ꢀ

(V

GS

=4.5V)  

< 28m

ꢀ

(VGS=-10V)  

< 44m

ꢀ

(VGS=-4.5V)  

100% UIS Tested  

100% R

g

Tested  

100% UIS Tested  

100% R

g

Tested  

SOIC-8  

D2  

D1  

Top View  

Bottom View  

Top View  

S2  

G2  

S1  

G1  

D2  

D2  

D1  

D1  

1

2

3

4

8

7

6

5

G2  

G1  

S2  

S1  

Pin1  

n-channel  

p-channel  

Absolute Maximum Ratings

 

T

A

=25

°

C

u

nless otherwise noted  

Parameter  

Symbol  

V

DS  

Max n-channel  

Max p-channel  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

30  

±20  

6

-30  

±20  

-6.5  

-5.3  

-30  

V

V

V

GS  

T

A

=25

°

C  

T

A

=70

°

C  

Continuous Drain  

Current  

Pulsed Drain Current

C  

Avalanche Current

C  

I

D  

A

5

I

DM  

30  

I

AS

, I

AR  

E

AS

, E

AR  

10  

5

23  

26  

2

A

Avalanche energy L=0.1mH

C  

mJ  

T

A

=25

°

C  

2

P

D  

W

°C  

Power Dissipation

B  

T

A

=70

°

C  

1.3  

1.3  

Junction and Storage Temperature Range  

T

J

, T

STG  

-55 to 150  

Thermal Characteristics  

Parameter  

Symbol  

Typ  

48  

Max  

62.5  

90  

Units  

°

C

/W  

°

C

/W  

°

C

/W  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Ambient

A D  

Maximum Junction-to-Lead  

t

≤

10s  

R

θ

JA  

Steady-State  

Steady-State  

74  

R

θ

JL  

32  

40  

Rev 10: April 2012  

Page 1 of 9  

AO4606  

N-Channel Electrical Characteristics (T

J

=25

°

C

u

nless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max  

Units  

STATIC PARAMETERS  

I

D

=250

µ

A, V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

30  

V

V

DS

=30V, V

GS

=0V  

1

5

I

DSS  

Zero Gate Voltage Drain Current  

µ

A  

T

J

=55

°

C  

I

GSS  

V

DS

=0V, V

GS

=±20V  

V

DS

=V

GS

I

D

=250

µ

A  

Gate-Body leakage current  

Gate Threshold Voltage  

On state drain current  

±100  

2.4  

nA  

V

V

GS(th)  

I

D(ON)  

1.2  

30  

1.8  

V

GS

=10V, V

DS

=5V  

V

GS

=10V, I

D

=6A  

A

25  

40  

30  

48  

42  

m

Ω  

R

DS(ON)  

Static Drain-Source On-Resistance  

T

J

=125

°

C  

V

GS

=4.5V, I

D

=5A  

V

DS

=5V, I

D

=6A  

I

S

=1A,V

GS

=0V  

33.5  

15  

m

Ω  

S

g

FS  

V

SD  

I

S  

Forward Transconductance  

Diode Forward Voltage  

0.76  

1

V

Maximum Body-Diode Continuous Current  

2.5  

A

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

200  

30  

255  

45  

310  

60  

pF  

pF  

pF  

Ω

V

GS

=0V, V

DS

=15V, f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

20  

35  

50  

V

GS

=0V, V

DS

=0V, f=1MHz  

1.6  

3.25  

4.9  

SWITCHING PARAMETERS  

Q

g

(10V) Total

 

Gate Charge  

Q

g

(4.5V) Total

 

Gate Charge  

4

2

5.2  

2.55  

0.85  

1.3  

6

3

nC  

nC  

nC  

nC  

ns  

V

Q

gs  

Q

gd  

t

D(on)  

t

r  

Gate Source Charge  

Gate Drain Charge  

Turn-On DelayTime  

4.5  

Turn-On Rise Time  

V

GS

=10V, V

DS

=15V, R

L

=2.5

Ω

,  

R

GEN

=3

Ω  

2.5  

ns  

t

D(off)  

t

f  

Turn-Off DelayTime  

14.5  

3.5  

ns  

Turn-Off Fall Time  

ns  

t

rr  

I

F

=6A, dI/dt=100A/

µ

s  

I

F

=6A, dI/dt=100A/

µ

s  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

8.5  

12  

3

ns  

Q

rr  

nC  

2.2  

A. The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C. The  

value in any given application depends on the user’s specific board design.  

B. The power dissipation P

D

is based on T

J(MAX)

=150

°

C, using

≤

10s junction-to-ambient thermal resistance.  

C. Repetitive

 

rating, pulse width limited by junction temperature T

J(MAX)

=150

°

C. Ratings are based on low frequency and duty cycles to keep  

initialT

J

=25

°

C.  

D. The R

θ

JA

is the sum of the thermal impedence from junction to lead R

θ

JL

and lead to ambient.  

E. The static characteristics in Figures 1 to 6 are obtained using <300

µ

s pulses, duty cycle 0.5% max.  

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with  

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150

°

C. The SOA curve provides a single pulse rating.  

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.

 

AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  

Rev 10: April

 

2012  

Page 2 of 9  

AO4606  

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

30  

25  

20  

15  

10  

5

15  

12  

9

10V  

V

DS

=5V  

4.5V  

7V  

4V  

3.5V  

6

125

°

C  

3

25

°

C  

V

GS

=3V  

0

0

0

1

2

3

4

5

1

1.5  

2

2.5  

V

GS

(Volts)  

3

3.5  

4

V

DS

(Volts)  

Fig 1: On-Region Characteristics (Note E)  

Figure 2: Transfer Characteristics (Note E)  

45  

2

V

GS

=4.5V  

I

D

=6A  

1.8  

1.6  

1.4  

1.2  

1

40  

35  

30  

25  

20  

V

GS

=4.5V  

17  

5

2

V

GS

=10V  

I

D

=8A  

10  

V

GS

=10V  

0.8  

0

3

6

9

12  

15  

0

25  

50  

75  

100  

125  

150  

0

18  

175  

I

D

(A)  

Temperature (

°

C

)  

Figure 3: On-Resistance vs. Drain Current and Gate  

Voltage (Note E)  

Figure 4: On-Resistance vs. Junction Temperature  

(Note E)  

100  

80  

1.0E+02  

1.0E+01  

I

D

=6A  

40  

1.0E+00  

125

°

C  

1.0E-01  

1.0E-02  

1.0E-03  

1.0E-04  

1.0E-05  

60  

125

°

C  

25

°

C  

25

°

C  

40  

20  

0

2

4

6

8

10  

0.0  

0.2  

0.4  

V

SD

(Volts)  

Figure 6: Body-Diode Characteristics (Note E)  

0.6  

0.8  

1.0  

1.2  

V

GS

(Volts)  

Figure 5: On-Resistance vs. Gate-Source Voltage  

(Note E)  

Rev 10: April

 

2012  

Page 3 of 9  

AO4606  

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

10  

500  

400  

300  

200  

100  

0

V

DS

=15V  

I

D

=6A  

8

C

iss  

6

4

C

oss  

2

C

rss  

0

0

5

10  

15  

20  

25  

30  

0

2

4

6

V

DS

(Volts)  

Q

g

(nC)  

Figure 8: Capacitance Characteristics  

Figure 7: Gate-Charge Characteristics  

100.0  

10.0  

1.0  

1000  

100  

10  

T

A

=25

°

C  

10

µ

s  

R

DS(ON)  

limited  

100

µ

s  

1ms  

10ms  

0.1  

T

J(Max)

=150

°

C  

T

A

=25

°

C  

10s  

DC  

1

0.0  

0.00001  

0.001  

0.1  

10  

1000  

0.01  

0.1  

1

10  

100  

V

DS

(Volts)  

Pulse Width (s)  

Figure 10: Single Pulse Power Rating Junction-  

to-Ambient (Note F)  

Figure 9: Maximum Forward Biased  

Safe Operating Area (Note F)  

10  

In descending order  

D=T

on

/T  

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  

T

J,PK

=T

A

+P

DM

.Z

θ

JA

.R

θ

JA  

R

θ

JA

=90

°

C/W  

1

0.1  

P

D  

0.01  

0.001  

T

on  

T

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

Pulse Width (s)  

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  

Rev 10: April

 

2012  

Page 4 of 9  

AO4606  

Gate Charge Test Circuit & Waveform  

Vgs  

Qg  

10V  

+

VDC  

+

Qgs  

Qgd  

Vds  

VDC  

–

–

DUT  

Vgs  

Ig  

Charge  

Resistive Switching Test Circuit & Waveforms  

RL  

Vds  

Vds  

90%  

10%  

+

DUT  

Vdd  

Vgs  

VDC  

Rg  

–

Vgs  

Vgs  

t

d(on)  

t

r

t

d(off)  

t

f

t

on  

t

off  

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  

L

E

AR

= 1/2 L

I

A

2

R  

B

V

DSS  

Vds  

Id  

Vgs  

Vds  

+

Vgs  

Vdd  

I

AR  

VDC  

Id  

Rg  

–

DUT  

Vgs  

Vgs  

Diode Recovery Test Circuit & Waveforms  

Q

rr

= –

 

Idt  

Vds +  

Vds –  

Ig  

DUT  

Vgs  

t

rr  

L

Isd  

I

F  

Isd  

Vgs  

dI/dt  

I

RM  

+

Vdd  

VDC  

Vdd  

–

Vds  

Rev 10: April

 

2012  

Page 5 of 9  

AO4606  

P-Channel Electrical Characteristics (T

J

=25

°

C

u

nless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max  

Units  

STATIC PARAMETERS  

I

D

=-250

µ

A, V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

-30  

V

V

DS

=-30V, V

GS

=0V  

-1  

-5  

I

DSS  

Zero Gate Voltage Drain Current  

µ

A  

T

V

DS

=0V, V

GS

=±20V  

I

GSS  

Gate-Body leakage current  

Gate Threshold Voltage  

On state drain current  

±100  

-2.4  

nA  

V

V

GS(th)  

I

D(ON)  

V

DS

=V

GS

I

D

=-250

µ

A  

V

GS

=-10V, V

DS

=-5V  

V

GS

=-10V, I

D

=-6.5A  

-1.3  

-30  

-1.85  

A

22  

32  

28  

40  

44  

m

Ω  

R

DS(ON)  

Static Drain-Source On-Resistance  

T

V

V

34  

m

Ω  

S

g

FS  

V

SD  

I

S  

Forward Transconductance  

Diode Forward Voltage  

18  

I

S

=-1A,V

GS

=0V  

-0.8  

-1  

V

Maximum Body-Diode Continuous Current  

-2.5  

A

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

760  

140  

95  

pF  

pF  

pF  

Ω

V

GS

=0V, V

DS

=-15V, f=1MHz  

V

GS

=0V, V

DS

=0V, f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

1.5  

3.2  

5

SWITCHING PARAMETERS  

Q

g

(10V) Total

 

Gate Charge  

Q

g

(4.5V) Total

 

Gate Charge  

13.6  

6.7  

2.5  

3.2  

8

16  

8

nC  

nC  

nC  

nC  

ns  

V

GS

=10V, V

DS

=-15V, I

D

=-6.5A  

Q

gs  

Q

gd  

t

D(on)  

t

r  

Gate Source Charge  

Gate Drain Charge  

Turn-On DelayTime  

Turn-On Rise Time  

V

GS

=10V, V

DS

=-15V, R

L

=2.3

Ω

,  

R

GEN

=3

Ω  

6

ns  

t

D(off)  

t

f  

Turn-Off DelayTime  

17  

5

ns  

Turn-Off Fall Time  

ns  

t

rr  

I

F

=-6.5A, dI/dt=100A/

µ

s  

I

F

=-6.5A, dI/dt=100A/

µ

s  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

15  

9.7  

ns  

Q

rr  

nC  

A. The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C. The  

value in any given application depends on the user’s specific board design.  

B. The power dissipation P

D

is based on T

J(MAX)

=150

°

C, using

≤

10s junction-to-ambient thermal resistance.  

C. Repetitive

 

rating, pulse width limited by junction temperature T

J(MAX)

=150

°

C. Ratings are based on low frequency and duty cycles to keep  

initialT

J

=25

°

C.  

D. The R

θ

JA

is the sum of the thermal impedence from junction to lead R

θ

JL

and lead to ambient.  

E. The static characteristics in Figures 1 to 6 are obtained using <300

µ

s pulses, duty cycle 0.5% max.  

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with  

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150

°

C. The SOA curve provides a single pulse rating.  

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.

 

AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  

Rev 10: April

 

2012  

Page 6 of 9  

AO4606  

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

40  

30  

20  

10  

0

40  

30  

20  

10  

0

V

DS

=-5V  

-10V  

-4.5V  

-4V  

-5V  

125

°

C  

-3.5V  

25

°

C  

V

GS

=-3V  

0

1

2

3

4

5

0

1

2

3

4

5

-V

DS

(Volts)  

Fig 1: On-Region Characteristics (Note E)  

-V

GS

(Volts)  

Figure 2: Transfer Characteristics (Note E)  

45  

1.8  

1.6  

1.4  

1.2  

1

V

GS

=-4.5V  

40  

35  

30  

25  

20  

15  

10  

V

GS

=-10V  

I

D

=-6.5A  

17  

5

I

D

=-5A  

V

GS  

10  

V

GS

=-10V  

0.8  

0

5

10  

15  

20  

0

25  

50  

75  

100  

125  

150  

175  

-I

D

(A)  

Temperature (

°

C

)  

Figure 3: On-Resistance vs. Drain Current and Gate  

Voltage (Note E)  

18  

(Note E)  

90  

1.0E+02  

1.0E+01  

I

D

=-6.5A  

40  

70  

50  

30  

10  

1.0E+00  

125

°

C  

1.0E-01  

1.0E-02  

1.0E-03  

1.0E-04  

1.0E-05  

125

°

C  

25

°

C  

25

°

C  

2

4

6

8

10  

0.0  

0.2  

0.4  

-V

SD

(Volts)  

Figure 6: Body-Diode Characteristics (Note E)  

0.6  

0.8  

1.0  

1.2  

-V

GS

(Volts)  

Figure 5: On-Resistance vs. Gate-Source Voltage  

(Note E)  

Rev 10: April

 

2012  

Page 7 of 9  

AO4606  

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

10  

1200  

1000  

800  

600  

400  

200  

0

V

DS

=-15V  

I

D

=-6.5A  

8

C

iss  

6

4

C

oss  

2

C

rss  

0

0

5

10  

15  

-V

DS

(Volts)  

20  

25  

30  

0

3

6

9

12  

15  

Q

g

(nC)  

Figure 8: Capacitance Characteristics  

Figure 7: Gate-Charge Characteristics  

1000  

100  

10  

100.0  

10.0  

1.0  

T

A

=25

°

C  

10

µ

s  

R

DS(ON)  

limited  

100

µ

s  

1ms  

10ms  

0.1  

DC  

T

J(Max)

=150

°

C  

T

A

=25

°

C  

10s  

0.0  

1

0.01  

0.1  

1

10  

100  

0.00001  

0.001  

0.1  

10  

1000  

-V

DS

(Volts)  

Pulse Width (s)  

Figure 9: Maximum Forward Biased Safe  

Operating Area (Note F)  

Figure 10: Single Pulse Power Rating Junction-  

to-Ambient (Note F)  

10  

D=T

on

/T  

In descending order  

T

J,PK

=T

A

+P

DM

.Z

θ

JA

.R

θ

JA  

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  

1

R

θ

JA

=90

°

C/W  

0.1  

P

D  

0.01  

T

on  

T

0.001  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

Pulse Width (s)  

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  

Rev 10: April

 

2012  

Page 8 of 9  

AO4606  

Gate Charge Test Circuit & Waveform  

Vgs  

Qg  

–

-10V  

–

VDC  

Qgs  

Qgd  

+

Vds  

VDC  

+

DUT  

Vgs  

Ig  

Charge  

Resistive Switching Test Circuit & Waveforms  

RL  

Vds  

t

off  

t

on  

t

t

d(off)  

t

d(on)  

t

r

f

Vgs  

–

90%  

10%  

DUT  

Vdd  

Vgs  

VDC  

+

Rg  

Vgs  

Vds  

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  

E

AR

= 1/2 LI

A

2

R  

L

Vds  

Id  

Vgs  

Vds  

BV

DSS  

Vgs  

Vdd  

+

VDC  

Id  

Rg  

I

AR  

DUT  

Vgs  

Vgs  

Diode Recovery Test Circuit & Waveforms  

Q

rr

= –

 

Idt  

Vds +  

Vds –  

Ig  

DUT  

Vgs  

t

rr  

L

-Isd  

-I

F  

Isd  

Vgs  

dI/dt  

-I

RM  

+

Vdd  

VDC  

Vdd  

–

-Vds  

Rev 10: April

 

2012  

Page 9 of 9