Alpha—Omega-Semicon-AO4616
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AO4616
30V Complementary MOSFET
General Description
Product Summary
The AO4616 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. This
N-Channel
P-Channel
V
DS
= 30V
-30V
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
I
D
= 8A
(V
GS
=10V)
R
DS(ON)
-7A (V
GS
=-10V)
R
DS(ON)
< 20m
ꢀ
(V
GS
=10V)
< 28m
ꢀ
(V
GS
=4.5V)
< 22m
ꢀ
(VGS=-10V)
< 40m
ꢀ
(VGS=-4.5V)
100% UIS Tested
100% R
g
Tested
ESD Protected
100% UIS Tested
100% R
g
Tested
SOIC-8
D2
D1
Top View
Bottom View
Top View
S2
D2
D2
D1
D1
G2
S1
G1
G2
G1
S1
S2
Pin1
n-channel
p-channel
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
8
-30
±20
-7
V
V
V
GS
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
I
D
A
6.5
40
-6
I
DM
-40
I
AS
, I
AR
E
AS
, E
AR
19
18
2
27
36
2
A
Avalanche energy L=0.1mH
C
mJ
T
A
=25
°
C
P
D
W
°C
Power Dissipation
B
T
A
=70
°
C
1.3
1.3
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
t
≤
10s
R
θ
JA
Steady-State
Steady-State
74
R
θ
JL
32
40
Rev 2: Jan. 2011
Page 1 of 9
AO4616
N-Channel Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
V
DS
=30V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
I
GSS
V
DS
=0V, V
GS
=±16V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
2.4
µ
A
V
V
GS(th)
I
D(ON)
1.2
40
1.8
A
16.5
23
20
28
28
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=6A
V
DS
=5V, I
D
=8A
I
S
=1A,V
GS
=0V
19.5
30
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.75
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
600
77
740
110
82
888
145
115
1.7
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
50
V
GS
=0V, V
DS
=0V, f=1MHz
0.5
1.1
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
12
6
15
7.5
2.5
3
18
9
nC
nC
nC
nC
ns
V
GS
=10V, V
DS
=15V, I
D
=8A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
5
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, R
L
=1.8
Ω
,
R
GEN
=3
Ω
3.5
19
3.5
8
ns
t
D(off)
t
f
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
t
rr
I
F
=8A, dI/dt=500A/
µ
s
I
F
=8A, dI/dt=500A/
µ
s
6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10
22
ns
Q
rr
14
nC
18
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
. The value
in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C
, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C
. Ratings are based on low frequency and duty
cycles to keep
initialT
J
=25
°
C
.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C
. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jan. 2011
Page 2 of 9
AO4616
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
V
DS
=5V
4V
3.5V
3V
10V
125
°
C
25
°
C
V
GS
=2.5V
4
0
0
1
1.5
2
2.5
3
3.5
4
0
1
2
3
5
V
DS
(Volts)
V
GS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=6A
25
20
15
10
V
GS
=4.5V
V
GS
=10V
V
GS
=10V
I
D
=8A
0.8
0
5
10
I
D
(A)
15
20
0
25
50
75
100
125
150
175
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Te
m
p
erature
(Note E)
40
35
30
25
20
15
10
1.0E+02
1.0E+01
I
D
=8A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
25
°
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Jan. 2011
Page 3 of 9
AO4616
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
800
600
400
200
0
V
DS
=15V
I
D
=8A
8
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
V
DS
(Volts)
20
25
30
0
3
6
9
12
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
1000
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
10
1
100
µ
s
1ms
10ms
0.1
T
J(Max)
=150
°
C
10s
DC
T
A
=25
°
C
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=T
on
/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
0.1
R
θ
JA
=90
°
C
/W
P
D
0.01
0.001
T
on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Jan. 2011
Page 4 of 9
AO4616
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev 2: Jan. 2011
Page 5 of 9
AO4616
P-Channel Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-30
V
V
DS
=-30V, V
GS
=0V
-1
-5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
-2.5
nA
V
V
GS(th)
I
D(ON)
V
DS
=V
GS
I
D
=-250
µ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-7A
-1.4
-40
-2.0
A
17.5
24.5
27.5
24
22
33
40
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
V
GS
=-4.5V, I
D
=-3.5A
DS
=-5V, I
D
=-7A
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
-0.75
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
830
125
75
1040 1250
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
180
125
4
235
175
6
2
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
15
19
9.6
3.6
4.6
10
23
12
nC
nC
nC
nC
ns
7.5
V
GS
=10V, V
DS
=-15V, I
D
=-7A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=-15V, R
L
=2.2
Ω
,
R
GEN
=3
Ω
5.5
26
ns
t
D(off)
t
f
Turn-Off DelayTime
ns
Turn-Off Fall Time
9
ns
t
rr
I
F
=-7A, dI/dt=500A/
µ
s
I
F
=-7A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11.5
25
15
ns
Q
rr
nC
32.5
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
. The value
in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C
, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C
. Ratings are based on low frequency and duty
cycles to keep
initialT
J
=25
°
C
.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C
. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jan. 2011
Page 6 of 9
AO4616
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
60
50
40
30
20
10
0
V
DS
=-5V
-10V
-7V
-5V
-4.5V
125
°
C
-3.5V
V
GS
=-3V
4
25
°
C
4
0
1
2
3
5
0
1
2
3
5
-V
DS
(Volts)
-V
GS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
40
1.6
1.4
1.2
1
V
GS
=-10V
I
D
=-7A
35
30
25
20
15
10
V
GS
=-4.5V
V
GS
=-10V
=-4.5
V
V
GS
I
D
=-3.5A
0.8
0
5
10
-I
D
(A)
15
20
0
25
50
75
100
125
150
175
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Te
m
p
erature
(Note E)
60
50
40
30
20
10
1.0E+02
1.0E+01
I
D
=-7A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
0.6
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Jan. 2011
Page 7 of 9
AO4616
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
1400
1200
1000
800
600
400
200
0
V
DS
=-15V
I
D
=-7A
8
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
-V
DS
(Volts)
20
25
30
0
5
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100.0
10.0
1.0
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1
T
J(Max)
=150
°
C
10s
DC
T
A
=25
°
C
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=90
°
C
/W
0.1
P
D
0.01
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Jan. 2011
Page 8 of 9
AO4616
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
t
d(off)
t
d(on)
t
r
f
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
E
AR
= 1/2 LI
A
2
R
L
Vds
Id
Vgs
Vds
–
BV
DSS
Vgs
Vdd
VDC
+
Id
Rg
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Rev 2: Jan. 2011
Page 9 of 9
