Alpha—Omega-Semicon-AO4800
| Part # | Alpha—Omega-Semicon-AO4800 |
Download  | Alpha—Omega-Semicon-AO4800 |
AO4800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4800 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in buck
converters.
Standard Product AO4800 is Pb-free
(meets ROHS & Sony 259 specifications). AO4800L
is a Green Product ordering option. AO4800 and
AO4800L are electrically identical.
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
R
R
DS(ON)
< 27m
Ω
(V
GS
= 10V)
DS(ON)
< 32m
Ω
(V
GS
= 4.5V)
DS(ON)
< 50m
Ω
(V
GS
= 2.5V)
D2
S2
D1
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
SOIC-8
S1
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
DS
Drain-Source Voltage
Gate-Source Voltage
30
±12
V
V
V
GS
T
A
=25°C
T
A
=70°C
6.9
Continuous Drain
Current
A
Pulsed Drain Current
B
A
I
D
5.8
I
DM
40
T
A
=25°C
T
A
=70°C
2
P
D
W
Power Dissipation
1.44
-55 to 150
T
J
, T
STG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
74
Steady-State
Steady-State
R
θ
JL
35
Alpha & Omega Semiconductor, Ltd.
AO4800
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
µ
A, V
GS
=0V
30
V
V
DS
=24V, V
GS
=0V
0.002
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±12V
100
1.4
nA
V
V
GS(th)
I
D(ON)
V
V
V
DS
=V
GS
I
D
=250
µ
A
GS
=4.5V, V
DS
=5V
GS
=10V, I
D
=6.9A
0.7
25
1
A
22.6
33
27
40
32
50
m
Ω
T
J
=125°C
m
Ω
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6.0A
27
V
GS
=2.5V, I
D
=5A
42
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=5A
12
16
S
V
A
I
S
=1A
0.71
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
858
110
80
1050
pF
pF
pF
Ω
V
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS
=0V, V
DS
=0V, f=1MHz
1.24
3.6
12
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
9.6
1.65
3
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
GS
=4.5V, V
DS
=15V, I
D
=6.9A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
3.2
4.1
26.3
3.7
15.5
7.9
4.8
6.2
40
V
GS
=10V, V
DS
=15V, R
L
=2.2
Ω
,
GEN
=3
Ω
R
t
D(off)
t
f
Turn-Off DelayTime
Turn-Off Fall Time
5.5
20
t
rr
Body Diode Reverse Recovery time
I
F
=5A, dI/dt=100A/
µ
s
Q
rr
Body Diode Reverse Recovery charge
I
F
=5A, dI/dt=100A/
µ
s
12
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any given
application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead
R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
Rev 4 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
10V
3V
V
DS
=5V
4.5V
2.5V
V
GS
=2V
125°C
4
25°C
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
50
40
30
20
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
I
D
=5A
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
0.9
0.8
0
5
10
15
20
0
50
100
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
150
200
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
125°C
60
50
40
30
20
10
I
D
=5A
125°C
25°C
0.50
25°C
0.00
0.25
0.75
V
SD
(Volts)
Figure 6: Body diode characteristics
1.00
1.25
1.50
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
5
4
3
2
1
0
f=1MHz
GS
=0V
V
DS
=15V
I
D
=6.9A
V
1250
1000
750
500
250
0
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
T
J(Max)
=150°C
T
A
=25°C
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note
E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
T
0.1
P
D
T
on
10
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
