Alpha—Omega-Semicon-AO6404
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AO6404
20V N-Channel MOSFET
General Description
Produc
t
S
ummary
• The AO6404 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating.
V
DS
(V) = 20V
I
D
= 8.6A (V
GS
= 10V)
R
DS(ON)
< 17m
Ω
(V
GS
= 10V)
R
DS(ON)
< 18m
Ω
(V
GS
= 4.5V)
R
DS(ON)
< 24m
Ω
(V
GS
= 2.5V)
R
DS(ON)
< 33m
Ω
(V
GS
= 1.8V)
• RoHS and Halogen-Free Compliant
ESD Rating: 2000V HBM
ESD Protected
100% UIS Tested
100% Rg
Tested
TSOP6
D
Top View
Bottom View
Top View
D
D
D
D
1
2
6
5
G
3
G
S
4
S
Pin1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO6404
TSOP6
Tape & Reel
3000
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
±12
8.6
V
A
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
A
I
D
6.8
Pulsed Drain Current
B
I
DM
30
T
A
=25
°
C
T
A
=70
°
C
2
P
D
W
°C
Power Dissipation
A
1.28
-55 to 150
Junction and Storage Temperature Range
T
J
, T
STG
Thermal Characteristics
Parameter
Symbol
Typ
45
Max
62.5
110
50
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Steady-State
Steady-State
70
Maximum Junction-to-Lead
C
R
θ
JL
33
Rev.5.0: April 2016
Page 1 of 5
AO6404
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
20
V
V
DS
=16V, V
GS
=0V
10
µ
A
25
I
DSS
Zero Gate Voltage Drain Current
T
J
=55
°
C
V
DS
=0V, V
GS
=±10V
I
GSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
10
µ
A
V
V
DS
=0V, I
G
=±250uA
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
BV
GSO
V
GS(th)
I
D(ON)
±12
0.5
30
0.75
1
V
On state drain current
A
13.4
16
17
20
18
24
33
m
Ω
T
J
=125
°
C
R
DS(ON)
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
GS
=1.8V, I
D
=3A
V
DS
=5V, I
D
=8A
I
S
=1A,V
GS
=0V
Static Drain-Source On-Resistance
14.8
18.8
25.5
36
m
Ω
m
Ω
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.73
1
V
Maximum Body-Diode Continuous Current
2.9
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1810 2200
pF
pF
pF
Ω
V
GS
=0V, V
DS
=10V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
232
200
V
1.6
2.2
22
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17.9
1.5
4.7
2.5
7.2
49
nC
nC
nC
ns
ns
ns
ns
V
GS
=4.5V, V
DS
=10V, I
D
=8.5A
V
GS
=10V, V
DS
=10V, R
L
=1.2
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
10.8
22
t
rr
I
F
=8.5A, dI/dt=100A/
µ
s
I
F
=8.5A, dI/dt=100A/
µ
s
27
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
9.8
nC
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
The value in any
given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.5.0: April 2016
Page 2 of 5
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10
2.5V
4.5V
V
DS
=5V
2V
125
°
C
V
GS
=1.5V
25
°
C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
DS
(Volts)
Fig 1: On-Region Characteristics
30
25
20
15
10
5
1.6
1.4
1.2
1
I
D
=5A
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=2.5V
V
GS
=10V
V
GS
=1.8V
V
GS
=4.5V
V
GS
=10V
0.8
0
5
10
I
D
(A)
15
20
0
25
50
75
100
125
150
175
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
40
10
I
D
=5A
35
30
25
20
15
10
5
1
125
°
C
0.1
125
°
C
0.01
25
°
C
0.001
0.0001
25
°
C
0
0.00001
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Rev.5.0: April 2016
Page 3 of 5
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
4
3
2
1
0
V
DS
=10V
I
D
=8A
2500
2000
1500
1000
500
C
iss
C
oss
C
rss
0
0
4
8
12
16
20
0
5
10
15
20
Q
g
(nC)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
40
T
J(Max)
=150
°
C
T
A
=25
°
C
R
DS(ON)
limited
10
µ
s
30
20
10
0
100
µ
s
1ms
10ms
0.1s
1s
DC
T
J(Max)
=150
°
C
T
A
=25
°
C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/(T
on
+T
off
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=110
°
C/W
)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
P
DM
0.1
T
on
T
off
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.5.0: April 2016
Page 4 of 5
AO6404
Figure
A
:
G
a
t
e
C
h
a
r
g
e
T
e
s
t
C
ir
c
u
i
t
&
W
aveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test Circuit &
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.5.0: April 2016
Page 5 of 5
AOS Semiconductor
Product Reliability Report
AO6404
,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
1
This AOS product reliability report summarizes the qualification result for AO6404. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AO6404 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
routine monitored for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
III.
IV.
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product
Description:
The AO6404 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge
and operation with gate voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating.
It is ESD protected.
Details refer to the datasheet.
II. Die / Package Information:
AO6404
Process
Standard sub-micron
20V N-Channel MOSFET
TSOP6
Bare Cu
Ag Epoxy
Package Type
Lead Frame
Die Attach
Bond
Cu & Au wire
Mold Material
Moisture Level
Epoxy resin with silica filler
Up to Level 1
2
III. Reliability Stress Test Summary and Results
Total
Sample
Size*
Number
of
Failures
Reference
Standard
Test Item
Test Condition
Time Point
–
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
MSL
Precondition
4851 pcs
0
JESD22-A113
Temp = 150°C
,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
924 pcs
924 pcs
0
0
JESD22-A108
JESD22-A108
HTGB
HTRB
Temp = 150°C
,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
130°C ,
85%RH,
33.3 psi,
Vds = 80% of Vdsmax
96 hours
924 pcs
0
JESD22-A110
HAST
85°C ,
85%RH,
Vds = 80% of Vdsmax
1000 hours
96 hours
693 pcs
1155 pcs
693 pcs
462 pcs
924 pcs
0
0
0
0
0
JESD22-A101
JESD22-A102
JESD22-A104
AEC Q101
H3TRB
121°C ,
29.7psi,
RH=100%
Autoclave
Temperature
Cycle
-65°C to
150°C ,
air to air,
250 / 500 /
1000 cycles
Power
Cycling
15000
cycles
Tj = 100°C
Temp = 150°C
1000 hrs
JESD22-A103
HTSL
*Note:
The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion):
3.27
MTTF = 34926 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
Failure Rate
= Chi
2
x 10
9
/
[
2 (N) (H) (Af)
] =
3.27
MTTF =
10
9
/ FIT = 34926 years
Chi²
= Chi Squared Distribution, determined by the number of failures and confidence interval
N
= Total Number of units from burn-in tests
H
= Duration of burn-in testing
Af
= Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C
)
Acceleration Factor [
Af
] =
Exp
[Ea /
k
(1/Tj u
–
1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
259
87
Tj s
= Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u
=The use junction temperature in degree (Kelvin), K = C+273.16
k
=
Boltzm
ann’s
constant, 8.617164 X 10
-5
eV / K
3
