Alpha—Omega-Semicon-AO6420
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AO6420
60V N-Channel MOSFET
General Description
Product Summary
The AO6420 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
V
DS
(V) = 60V
I
D
= 4.2A (V
GS
= 10V)
R
DS(ON)
< 60m
Ω
(V
GS
= 10V)
R
DS(ON)
< 75m
Ω
(V
GS
= 4.5V)
TSOP6
D
Top View
Bottom View
Top View
D
D
D
D
1
2
6
5
G
3
S
4
G
S
Pin1
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
4.2
V
A
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
A,F
I
D
3.4
Pulsed Drain Current
B
I
DM
20
T
A
=25
°
C
T
A
=70
°
C
2.00
P
D
W
°C
Power Dissipation
1.28
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
110
40
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Steady-State
Steady-State
74
Maximum Junction-to-Lead
C
R
θ
JL
35
Alpha & Omega Semiconductor, Ltd.
AO6420
N Channel Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
60
V
V
DS
=60V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
V
GS(th)
I
D(ON)
1
2.3
20
A
V
GS
=10V, I
D
=4.2A
50
85
60
75
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=3A
V
DS
=5V, I
D
=4.2A
I
S
=1A,V
GS
=0V
60
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
13
0.78
1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
450
60
540
2
pF
pF
pF
Ω
V
GS
=0V, V
DS
=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
25
V
GS
=0V, V
DS
=0V, f=1MHz
1.65
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
9.5
4.3
1.6
2.2
5.1
2.6
15.9
2
11.5
5.5
nC
nC
nC
nC
ns
V
GS
=10V, V
DS
=30V, I
D
=4.2A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7
4
V
GS
=10V, V
DS
=30V, R
L
=7
Ω
,
ns
R
GEN
=3
Ω
t
D(off)
t
f
20
3
ns
ns
t
rr
I
F
=4.2A, dI/dt=100A/
µ
s
I
F
=4.2A, dI/dt=100A/
µ
s
25.1
28.7
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
nC
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any
given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t
≤
10s thermal resistance rating.
Rev2: Feb. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO6420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
15
10
5
15
10
5
10.0V
V
DS
=5V
5.0V
4.5V
125
°
C
4.0V
25
°
C
V
GS
=3.5V
3
0
0
0
1
2
4
5
2
2.5
3
3.5
V
GS
(Volts)
4
4.5
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
100
90
80
70
60
50
40
30
20
2
VGS=10
I
D
=4.2A
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=4.5V
I
D
=3A
V
GS
=10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
I
D
(A)
Temperature (
°
C
)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
120
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=4.2A
125
°
C
125
°
C
25
°
C
25
°
C
60
40
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO6420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
800
600
400
200
0
V
DS
=30V
I
D
= 4.2A
C
iss
6
4
C
oss
2
C
rss
0
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
T
J(Max)
=150
°
C
T
A
=25
°
C
30
20
10
0
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1s
1s
0.1
DC
T
J(Max)
=150
°
C
T
A
=25
°
C
10s
100
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
Pulse Width (s)
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=110
°
C/W
P
D
0.1
T
on
T
Single Pulse
0.01
0.01
0.00001
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
