Alpha—Omega-Semicon-AO6800

AO6800  

30V Dual

 

N-Channel MOSFET  

General Description  

Product Summary  

V

DS  

30V  

The AO6800 uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge and operation with gate  

voltages as low as 2.5V. This device is suitable for use as  

a load switch or in PWM applications.  

I

D

(at V

GS

=10V)  

R

DS(ON)

(at V

GS

= 10V)  

R

DS(ON)

(at V

GS

= 4.5V)  

R

DS(ON)

(at V

GS

= 2.5V)  

3.4A  

< 60m

Ω

 

< 70m

Ω  

< 90m

Ω  

TSOP6  

D1  

D2  

Top View  

Bottom View  

Top View  

G1  

S2  

1

2

3

6

5

4

D1  

S1  

G1  

G2  

G2  

D2  

S1  

S2  

Pin1  

Absolute Maximum Ratings

 

T

A

=25

°

C

u

nless otherwise noted  

Parameter  

Symbol  

V

DS  

Maximum  

30  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

±12  

T

A

=25

°

C  

T

A

=70

°

C  

3.4  

Continuous Drain  

Current  

I

D  

2.7  

A

Pulsed Drain Current

C  

I

DM  

P

D  

20  

1.15  

T

A

=25

°

C  

T

A

=70

°

C  

W

°C  

Power Dissipation

B  

0.73  

Junction and Storage Temperature Range  

T

J

, T

STG  

-55 to 150  

Thermal Characteristics  

Parameter  

Symbol  

Typ  

78  

Max  

110  

150  

80  

Units  

°

C

/W  

°

C

/W  

°

C

/W  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Ambient

A D  

Maximum Junction-to-Lead  

t

≤

10s  

R

θ

JA  

Steady-State  

Steady-State  

106  

64  

R

θ

JL  

Rev 5: December 2010  

Page 1 of 5  

AO6800  

Electrical Characteristics (T

J

=25

°

C

u

nless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max Units  

STATIC PARAMETERS  

I

D

=250

µ

A, V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

30  

V

V

DS

=30V, V

GS

=0V  

1

I

DSS  

Zero Gate Voltage Drain Current  

µ

A  

5

T

J

=55

°

C  

V

DS

=0V, V

GS

=±12V  

V

DS

=V

GS

I

D

=250

µ

A  

V

GS

=10V, V

DS

=5V  

V

GS

=10V, I

D

=3.4A  

I

GSS  

Gate-Body leakage current  

Gate Threshold Voltage  

On state drain current  

±100  

1.5  

nA  

V

V

GS(th)  

I

D(ON)  

0.5  

20  

1

A

46  

73  

60  

88  

70  

90  

m

Ω  

T

J

=125

°

C  

R

DS(ON)  

Static Drain-Source On-Resistance  

V

GS

=4.5V, I

D

=3A  

50  

m

Ω  

m

Ω  

S

V

GS

=2.5V, I

D

=2A  

62  

V

DS

=5V, I

D

=3.4A  

I

S

=1A,V

GS

=0V  

g

FS  

V

SD  

I

S  

Forward Transconductance  

Diode Forward Voltage  

14  

0.75  

1

V

Maximum Body-Diode Continuous Current  

1.5  

A

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

235  

35  

pF  

pF  

pF  

Ω

V

GS

=0V, V

DS

=15V, f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

18  

V

GS

=0V, V

DS

=0V, f=1MHz  

4.3  

SWITCHING PARAMETERS  

Q

g

(10V) Total

 

Gate Charge  

10  

4.7  

nC  

nC  

nC  

nC  

ns  

Q

g

(4.5V) Total

 

Gate Charge  

V

GS

=10V, V

DS

=15V, I

D

=3.4A  

Q

gs  

Q

gd  

t

D(on)  

t

r  

Gate Source Charge  

Gate Drain Charge  

Turn-On DelayTime  

Turn-On Rise Time  

Turn-Off DelayTime  

Turn-Off Fall Time  

0.95  

1.6  

3.5  

V

GS

=10V, V

DS

=15V, R

L

=4.4

Ω

,  

R

GEN

=3

Ω  

1.5  

ns  

t

D(off)  

t

f  

17.5  

2.5  

ns  

ns  

t

rr  

I

F

=3.4A, dI/dt=100A/

µ

s  

I

F

=3.4A, dI/dt=100A/

µ

s  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

8.5  

ns  

Q

rr  

nC  

2.55  

A. The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C

. The  

value in any given application depends on the user’s specific board design.  

B. The power dissipation P

D

is based on T

J(MAX)

=150

°

C

, using

 

≤

10s junction-to-ambient thermal resistance.  

C. Repetitive

 

rating, pulse width limited by junction temperature T

J(MAX)

=150

°

C

. Ratings are based on low frequency and duty

 

cycles to keep  

initialT

J

=25

°

C

.  

D. The R

θ

JA

is the sum of the thermal impedence from junction to lead R

θ

JL

and lead to ambient.  

E. The static characteristics in Figures 1 to 6 are obtained using <300

µ

s pulses, duty cycle 0.5% max.  

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with  

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150

°

C

. The SOA curve provides a single pulse ratin g.  

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.

 

AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  

Rev 5: December 2010  

Page 2 of 5  

AO6800  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

15  

12  

9

15  

12  

9

10V  

V

DS

=5V  

3V  

2.5V  

4.5V  

6

6

V

GS

=2.0V  

125

°

C  

3

3

25

°

C  

0

0

0

0.5  

1

1.5  

V

GS

(Volts)  

2

2.5  

3

0

1

2

3

4

5

V

DS

(Volts)  

Figure 2: Transfer Characteristics (Note E)  

Fig 1: On-Region Characteristics (Note E)  

80  

2

V

GS

=2.5V  

1.8  

1.6  

1.4  

1.2  

1

70  

60  

50  

40  

30  

V

GS

=4.5V  

I

D

=3A  

17  

V

GS

=4.5V  

V

GS

=10V  

5

V

GS

=2.5V  

2

I

D

=2A  

10  

V

GS

=10V  

I

D

=3.4A  

0.8  

0

25  

50  

75  

100  

125  

150  

175  

0

2

4

6

8

10  

I

D

(A)  

0

Temperature (

°

C

)  

Figure 3: On-Resistance vs. Drain Current and  

Gate Voltage (Note E)  

(Note E)  

140  

120  

100  

80  

1.0E+02  

1.0E+01  

I

D

=3.4A  

40  

1.0E+00  

125

°

C  

125

°

C  

1.0E-01  

1.0E-02  

1.0E-03  

1.0E-04  

1.0E-05  

25

°

C  

60  

25

°

C  

40  

20  

0.0  

0.2  

0.4  

0.6  

V

SD

(Volts)  

Figure 6: Body-Diode Characteristics (Note E)  

0.8  

1.0  

1.2  

0

2

4

6

8

10  

V

GS

(Volts)  

Figure 5: On-Resistance vs. Gate-Source Voltage  

(Note E)  

Rev 5: December 2010  

Page 3 of 5  

AO6800  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

10  

400  

350  

300  

250  

200  

150  

100  

50  

V

DS

=15V  

I

D

=3.4A  

8

C

iss  

6

4

C

oss  

2

C

rss  

0

0

0

3

6

9

12  

0

5

10  

15  

V

DS

(Volts)  

20  

25  

30  

Q

Figure 7: Gate-Charge Characteristics  

Figure 8: Capacitance Characteristics  

10000  

1000  

100  

10  

100.0  

10.0  

1.0  

T

A

=25

°

C  

10

µ

s  

R

DS(ON)  

limited  

100

µ

s  

1ms  

10ms  

T

J(Max)

=150

°

C  

0.1  

DC  

T

A

=25

°

C  

10s  

0.0  

1

0.01  

0.1  

1

10  

100  

0.00001  

0.001  

0.1  

10  

1000  

V

DS

(Volts)  

Pulse Width (s)  

Figure 10: Single Pulse Power Rating Junction-to-  

Ambient (Note F)  

Figure 9: Maximum Forward Biased Safe  

Operating Area (Note F)  

10  

1

D=T

on

/T  

In descending order  

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  

T

R

0.1  

Single Pulse  

0.01  

0.00001  

0.0001  

0.001  

0.01  

0.1  

Pulse Width (s)  

1

10  

100  

1000  

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  

Rev 5: December 2010  

Page 4 of 5  

AO6800  

Gate Charge Test Circuit & Waveform  

Vgs  

Qg  

10V  

+

VDC  

+

Qgs  

Qgd  

Vds  

VDC  

–

–

DUT  

Vgs  

Ig  

Charge  

Resistive Switching Test Circuit & W

 

aveforms  

RL  

Vds  

Vds  

90%  

10%  

+

DUT  

Vdd  

Vgs  

VDC  

Rg  

–

Vgs  

Vgs  

t

d

(on)  

t

r

t

d

(off)  

t

f

t

o

n  

t

o

ff  

D

i

ode Recovery Test Circuit & Waveforms  

Q

rr

= –

 

Idt  

Vds +  

DUT  

Vgs  

t

rr  

Vds –  

L

Isd  

I

F  

Isd  

Vgs  

dI/dt  

I

R

M  

+

Vdd  

VDC  

Vdd  

–

Vds  

Ig  

Rev 5: December 2010  

Page 5 of 5