Alpha—Omega-Semicon-AO7800
| Part # | Alpha—Omega-Semicon-AO7800 |
Download  | Alpha—Omega-Semicon-AO7800 |
AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO7800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected.
Standard Product AO7800 is Pb-
free (meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical.
V
DS
(V) = 20V
I
D
= 0.9 A (V
GS
= 4.5V)
R
DS(ON)
< 300m
Ω
(V
GS
= 4.5V)
R
DS(ON)
< 350m
Ω
(V
GS
= 2.5V)
R
DS(ON)
< 450m
Ω
(V
GS
= 1.8V)
SC-70-6
(SOT-323)
Top View
D2
S2
D1
S1
G2
G1
1
2
3
6
5
4
S1
G1
D2
D1
G2
S2
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
DS
Drain-Source Voltage
20
V
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
±8
0.9
V
A
T
A
=25°C
T
A
=70°C
I
D
0.7
Pulsed Drain Current
B
I
DM
5
T
A
=25°C
T
A
=70°C
0.3
P
D
W
Power Dissipation
A
0.19
-55 to 150
T
J
, T
STG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
Typ
360
400
300
Max
415
460
350
Units
°C/W
°C/W
°C/W
t
≤
10s
R
θ
JA
Steady-State
Steady-State
R
θ
JL
Alpha Omega Semiconductor, Ltd.
AO7800
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
µ
A, V
GS
=0V
20
V
V
DS
=16V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
µ
A
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±8V
25
0.9
V
GS(th)
I
D(ON)
V
DS
=V
GS
I
D
=250
µ
A
0.5
5
0.75
V
A
V
GS
=4.5V, V
DS
=5V
GS
=4.5V, I
D
=0.9A
V
181
253
237
317
2.6
300
350
350
450
m
Ω
T
J
=125°C
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
m
Ω
V
GS
=2.5V, I
D
=0.75A
V
GS
=1.8V, I
D
=0.7A
V
DS
=5V, I
D
=0.8A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
S
V
A
I
S
=0.5A,V
GS
=0V
0.69
1
Maximum Body-Diode Continuous Current
0.4
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
101
17
14
3
120
pF
pF
pF
Ω
V
GS
=0V, V
DS
=10V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
4
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1.57
0.13
0.36
3.2
1.9
nC
nC
nC
ns
ns
ns
ns
V
GS
=4.5V, V
DS
=10V, I
D
=0.8A
V
GS
=5V, V
DS
=10V, R
L
=12.5
Ω
,
4
R
GEN
=6
Ω
t
D(off)
t
f
15.5
2.4
t
rr
I
F
=0.8A, dI/dt=100A
/
µ
s
I
F
=0.8A, dI/dt=100A
/
µ
s
8.1
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
6.7
1.6
ns
nC
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
value in any given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The
R
θ
JA
is the sum of the thermal impedence from junction to lead
R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 8
0
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : July 2003
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
3
2
1
0
10
10V
8V
V
DS
=5V
5V
4V
8
6
4
2
0
25°C
125°C
3.5V
3V
2.5V
V
GS
=2V
0
1
2
3
4
5
0
0.5
1
1.5
V
GS
(Volts)
2
2.5
3
V
DS
(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
480
440
400
360
320
280
240
200
160
1.8
1.6
1.4
1.2
1
V
GS
=1.8V
V
GS
=1.8V
V
GS
=2.5V
I
D
=0.75A
V
GS
=4.5V
I
D
=0.9A
V
GS
=2.5V
V
GS
=4.5V
0.8
0
1
2
D
(A)
3
4
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
500
460
420
380
340
300
260
220
180
140
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
I
D
=0.9A
125°C
25°C
25°C
1
2
3
4
5
6
7
8
0.0
0.4
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
1.2
1.6
2.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
5
4
3
2
1
0
V
DS
=10V
I
D
=0.9A
150
100
50
C
iss
C
oss
C
rss
0
0
5
10
DS
(Volts)
15
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
Q
g
(nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
10.0
T
J(Max)
=150°C, T
A
=25°C
16
12
8
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
R
DS(ON)
limited
100
µ
s
10ms
0.1s
1ms
1.0
0.1
0.0
1s
4
10s
1
DC
0
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=T
on
/T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=415°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
P
D
T
on
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
