Alpha—Omega-Semicon-AO8822
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AO8822
20V Common-Drain Dual
N-Channel MOSFET
General Description
Product Summary
V
DS
20V
The AO8822 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its common-
drain configuration.
I
D
(at V
GS
=10V)
7A
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
R
DS(ON)
(at V
GS
= 3.6V)
R
DS(ON)
(at V
GS
= 2.5V)
< 18m
Ω
< 22m
Ω
< 23m
Ω
< 27m
Ω
ESD Protected
TSSOP8
D
D
Top View
Bottom View
D1/D2
S1
D1/D2
S2
8
7
6
5
1
2
3
4
G
G
S1
G1
S2
G2
S
S
Pin 1
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
20
±12
7
V
V
V
GS
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
I
D
6
A
Pulsed Drain Current
C
I
DM
P
D
30
1.5
T
A
=25
°
C
T
A
=70
°
C
W
°C
Power Dissipation
B
1
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
63
Max
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
t
≤
10s
83
130
83
R
θ
JA
Steady-State
Steady-State
101
64
R
θ
JL
Rev 6 : March 2011
Page 1 of 5
AO8822
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
20
V
V
DS
=20V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
= ±10V
I
GSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
10
1
µ
A
V
V
DS
=0V, I
G
=±250
µ
A
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=7A
BV
GSO
V
GS(th)
I
D(ON)
±12
0.5
30
0.8
V
On state drain current
A
13
15
22
17
18
21
28
31
0.7
18
27
22
23
27
m
Ω
T
J
=125
°
C
V
GS
=4.5V, I
D
=6.6A
V
GS
=3.6V, I
D
=6A
V
GS
=2.5V, I
D
=5.5A
V
GS
=1.8V, I
D
=2A
V
DS
=5V, I
D
=7A
15
16
18
m
Ω
m
Ω
m
Ω
m
Ω
S
R
DS(ON)
Static Drain-Source On-Resistance
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=1A,V
GS
=0V
1
2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
520
650
140
60
780
pF
pF
pF
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
12
5
15
6.7
3.6
3
18
8
nC
nC
nC
nC
us
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=10V, I
D
=7A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
0.25
0.45
11
V
GS
=10V, V
DS
=10V, R
L
=1.5
Ω
,
R
GEN
=3
Ω
us
t
D(off)
t
f
us
4
us
t
rr
I
F
=7A, dI/dt=500A/
µ
s
I
F
=7A, dI/dt=500A/
µ
s
8
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10
11
12
ns
Q
rr
nC
13.5
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C
, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C
. Ratings are based on low frequency and duty
cycles to keep
initialT
J
=25
°
C
.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C
. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6 : March 2010
Page 2 of 5
AO8822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
20
15
10
5
10V
4V
V
DS
=5V
3V
V
GS
=2V
125
°
C
25
°
C
0
0
0.5
1
1.5
V
GS
(Volts)
2
2.5
3
0
1
2
3
4
5
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
40
1.6
1.4
1.2
1
V
GS
=3.6V
I
D
=6A
V
GS
=1.8V
35
30
25
20
15
10
V
GS
=4.5V
I
D
=6.6A
V
=
1.8V
GS
V
GS
=2.5V
V
GS
=2.5V
I
D
=5.5A
V
GS
=4.5V V
GS
=3.6V
I =
2
A
D
V
GS
=10V
I
D
=7A
V
GS
=10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
50
40
30
20
10
1.0E+01
I
D
=7A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25
°
C
125
°
C
25
°
C
0.0
0.2
0.4
0.6
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 6 : March 2010
Page 3 of 5
AO8822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
V
DS
=10V
I
D
=7A
8
800
600
400
200
0
C
iss
6
4
C
oss
2
C
rss
0
0
4
8
12
16
0
4
8
12
16
20
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
40
100.0
10.0
1.0
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
30
20
10
0
100
µ
s
1ms
10ms
T
J(Max)
=150
°
C
T
A
=25
°
C
0.1
10s
DC
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=83
°
C
/W
T
1
0.1
R
P
D
0.01
0.001
Single Pulse
0.001
T
on
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6 : March 2010
Page 4 of 5
AO8822
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W
aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d
(on)
t
r
t
d
(off)
t
f
t
o
n
t
o
ff
D
i
ode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
DUT
Vgs
t
rr
Vds –
L
Isd
I
F
Isd
Vgs
dI/dt
I
R
M
+
Vdd
VDC
Vdd
–
Vds
Ig
Rev 6 : March 2010
Page 5 of 5
