Alpha—Omega-Semicon-AOD2210
| Part # | Alpha—Omega-Semicon-AOD2210 |
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AOD2210/AOI2210
200V N-Channel MOSFET
General Description
Product Summary
V
DS
• Trench Power MV MOSFET technology
• Low R
DS(ON)
200V
18A
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=5V)
• Low Gate Charge
• Optimized for fast-switching applications
< 105mΩ
< 120mΩ
Applications
100% UIS Tested
100% Rg
Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO251A
IPAK
TO-252
DPAK
D
Top View
Top View
Bottom View
Bottom View
D
D
D
D
G
G
G
S
S
D
D
S
S
S
G
G
Orderable Part Number
AOD2210
Package Type
TO-252
Form
Tape & Reel
Minimum Order Quantity
2500
AOI2210
TO-251A
Tube
4000
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
200
±20
18
V
V
V
GS
T
C
=25°C
Continuous Drain
Current
Pulsed Drain Current
C
I
D
T
C
=100°C
13
A
I
DM
45
T
A
=25°C
T
A
=70°C
3.0
Continuous Drain
Current
Avalanche Current
C
Avalanche energy
V
DS
Spike
I
DSM
A
2.5
I
AS
9
A
mJ
V
C
L=0.1mH
10µs
E
AS
4
V
SPIKE
240
100
50
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
P
D
W
Power Dissipation
B
Power Dissipation
A
2.5
P
DSM
W
1.6
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
41
1
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤ 10s
R
θ
JA
Steady-State
Steady-State
50
R
θ
JC
1.5
Rev.1.0: August 2014
Page 1 of 6
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
200
V
V
DS
=200V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=55°C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.5
105
225
120
nA
V
V
GS(th)
V
DS
=V
GS,
I
D
=250
µ
A
1.5
2.0
87
V
GS
=10V, I
D
=18A
mΩ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
185
93
V
GS
=5V, I
D
=16A
V
DS
=5V, I
D
=18A
I
S
=1A,V
GS
=0V
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
40
0.7
1
V
Maximum Body-Diode Continuous Current
18
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
2065
74
pF
pF
pF
Ω
V
GS
=0V, V
DS
=100V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3.8
2.2
f=1MHz
1.1
3.3
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
27
12
7
40
20
nC
nC
nC
nC
ns
Total Gate Charge
V
GS
=10V, V
DS
=100V, I
D
=18A
Gate Source Charge
Gate Drain Charge
3
Turn-On DelayTime
8
Turn-On Rise Time
V
GS
=10V, V
DS
=100V, R
L
=5.5
Ω
,
R
GEN
=3
Ω
10
30
4
ns
t
D(off)
t
f
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
t
rr
I
F
=18A, dI/dt=500A/
µ
s
I
F
=18A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
60
800
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t≤ 10s and the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design, and the maximum temperature of 175
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=175
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2014
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
20
10
0
10V
V
DS
=5V
3.5V
4.5V
5V
20
10
0
125
°
C
V
GS
=3V
25
°
C
1
2
3
4
5
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
130
110
90
3.2
2.8
2.4
2
V
GS
=10V
I
D
=18A
V
GS
=5V
1.6
1.2
0.8
V
GS
=5V
I
D
=16A
70
V
GS
=10V
50
0
25
50
75
100 125 150 175 200
0
5
10
15
I
D
(A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
220
200
180
160
140
120
100
80
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=18A
125
°
C
125
°
C
25
°
C
25
°
C
60
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2014
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
V
DS
=100V
I
D
=18A
8
2000
1500
1000
500
0
C
iss
6
4
2
C
oss
C
rss
0
0
5
10
15
20
25
30
0
20
40
60
80
100
Q
g
(nC)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
500
400
300
200
100
0
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
100
µ
s
R
DS(ON)
limited
1ms
10ms
DC
0.1
T
J(Max)
=175
°
C
T
C
=25
°
C
0.0
0.01
0.0001 0.001
0.01
0.1
1
10
100 1000
0.1
1
10
100
1000
V
DS
(Volts)
V
GS
> or equal to 5V
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=1.5
°
C/W
P
D
0.1
0.01
Single Pulse
0.001
T
on
T
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2014
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
120
100
80
60
40
20
0
T
A
=25
°
C
T
A
=100
°
C
T
A
=150
°
C
T
A
=125
°
C
1
10
100
0
25
50
75
T
CASE
(
°
C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, t
A
(
µ
s)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
20
15
10
5
T
A
=25
°
C
1
0
1E-05
0.001
0.1
10
1000
0
25
50
75
T
CASE
(
°
C)
Figure 14: Current De-rating (Note F)
100
125
150
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=50
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
P
D
0.01
0.001
Single Pulse
0.01
T
on
T
0.0001
0.001
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: August 2014
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
BV
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.0: August 2014
Page 6 of 6
