Alpha—Omega-Semicon-AOD242
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AOD242
40V N-Channel
MOSFET
General Description
Product Summary
V
DS
40V
The AOD242 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
54A
< 5.8m
Ω
< 8.2m
Ω
100% UIS Tested
100% R
g
Tested
TO252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
40
V
V
Gate-Source Voltage
V
GS
±20
54
T
C
=25
°
C
Continuous Drain
Current
G
Pulsed Drain Current
C
I
D
T
C
=100
°
C
A
42
I
DM
165
T
A
=25
°
C
T
A
=70
°
C
14.5
11.5
40
Continuous Drain
Current
I
DSM
A
Avalanche Current
C
I
AS
A
Avalanche energy L=0.1mH
C
E
AS
80
mJ
T
C
=25
°
C
Power Dissipation
B
T
C
=100
°
C
53.5
26.5
2.5
P
D
W
T
A
=25
°
C
P
DSM
W
°C
Power Dissipation
A
1.6
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
41
50
R
θ
JC
2.2
2.8
Rev 0: Mar. 2012
Page 1 of 6
AOD242
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
40
V
V
DS
=40V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
，
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.3
nA
V
V
GS(th)
I
D(ON)
1.3
1.8
165
A
4.7
7.9
6.4
70
5.8
9.5
8.2
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=20A
m
Ω
S
V
DS
=5V, I
D
=20A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
G
0.7
1
V
54
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1350
405
26
pF
pF
pF
Ω
V
GS
=0V, V
DS
=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
1
2
3
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
19
8
28
12
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=20V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.5
2.3
6
V
GS
=10V, V
DS
=20V, R
L
=1
Ω
,
R
GEN
=3
Ω
2.5
23
4
ns
t
D(off)
t
f
ns
ns
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15.5
31
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150
°
C. The value in any given application depends
on the user’s specific board design, and the maximum temperature of 175
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Mar. 2012
Page 2 of 6
AOD242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
V
DS
=5V
4.5V
7V
3.5V
3V
125
°
C
25
°
C
V
GS
=2.5V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
9
2.2
2
V
GS
=10V
I
D
=20A
8
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
7
6
5
V
GS
=4.5V
I
D
=20A
4
V
GS
=10V
3
0.8
2
0
25
50
75
100 125 150 175 200
0
10
20
I
D
(A)
30
40
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Juncti
o
n
Temperature
15
12
9
1.0E+02
1.0E+01
I
D
=20A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
6
25
°
C
3
25
°
C
0
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Mar. 2012
Page 3 of 6
AOD242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
V
DS
=20V
I
D
=20A
1600
1400
1200
1000
800
600
400
200
0
C
iss
8
6
C
oss
4
2
C
rss
0
0
5
10
Q
g
(nC)
15
20
0
5
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
25
30
35
40
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
100
µ
s
1ms
10ms
DC
T
J(Max)
=175
°
C
T
C
=25
°
C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Ca
(Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=2.8
°
C/W
P
D
0.1
0.01
T
on
T
Single Pulse
0.0001
1E-05
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Mar. 2012
Page 4 of 6
AOD242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
60
50
T
A
=25
°
C
T
A
=100
°
C
100
40
T
A
=150
°
C
30
10
1
20
10
0
T
A
=125
°
C
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, t
A
(
µ
s)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE
(
°
C
)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
T
A
=25
°
C
50
40
30
20
10
0
1
1E-05
0.001
0.1
10
1000
0
25
50
75
T
CASE
(
°
C
)
100
125
150
175
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=50
°
C/W
0.1
P
D
0.01
Single Pulse
0.001
T
on
T
0.001
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Mar. 2012
Page 5 of 6
AOD242
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev 0: Mar. 2012
Page 6 of 6
