Alpha—Omega-Semicon-AOD2544
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AOD2544
150V N-Channel AlphaMOS
General Description
Product Summary
V
DS
• Latest Trench Power AlphaMOS (
α
MOS MV) technology
• Very Low R
DS(ON)
150V
23A
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
• Low Gate Charge
• Optimized for fast-switching applications
• RoHS and Halogen-Free Compliant
< 54m
ꢀ
< 66m
ꢀ
Application
100% UIS Tested
100% Rg
Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
TO-252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AOD2544
TO-252
2500
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Maximum
150
±20
23
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
T
C
=25
°
C
Continuous Drain
Current
Pulsed Drain Current
C
I
D
T
C
=100
°
C
16
A
I
DM
45
T
A
=25
°
C
T
A
=70
°
C
6.5
Continuous Drain
Current
I
DSM
A
5.0
Avalanche Current
C
I
AS
15
A
mJ
V
Avalanche energy L=0.3mH
C
E
AS
34
V
DS
Spike
10
ꢁ
s
V
SPIKE
180
75
T
C
=25
°
C
T
C
=100
°
C
T
A
=25
°
C
T
A
=70
°
C
P
D
W
Power Dissipation
B
Power Dissipation
A
37.5
6.2
P
DSM
W
°C
4.0
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
40
50
R
θ
JC
1.6
2.0
Rev.1.0: October 2013
Page 1 of 6
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
150
V
V
DS
=150V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
ꢁ
A
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250
µ
A
V
GS
=10V, I
D
=5A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.7
54
nA
V
V
GS(th)
1.7
2.15
45
m
ꢀ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
89
107
66
V
GS
=4.5V, I
D
=2A
V
DS
=5V, I
D
=5A
I
S
=1A,V
GS
=0V
52.5
17
m
ꢀ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.72
1
V
Maximum Body-Diode Continuous Current
23
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
675
78
4
pF
pF
pF
ꢀ
V
GS
=0V, V
DS
=75V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
1.4
2.9
4.4
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
11.5
5.5
2
20
10
nC
nC
nC
nC
ns
Total Gate Charge
V
GS
=10V, V
DS
=75V, I
D
=5A
Gate Source Charge
Gate Drain Charge
2.5
6
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=75V, R
L
=15
Ω
,
R
GEN
=3
Ω
3
ns
t
D(off)
t
f
Turn-Off DelayTime
20
5
ns
Turn-Off Fall Time
ns
t
rr
I
F
=5A, dI/dt=500A/
µ
s
I
F
=5A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
37
210
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t
≤
10s and the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design, and the maximum temperature of 175
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=175
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
40
30
20
10
0
10V
V
DS
=5V
4.5V
4.0V
30
20
10
0
3.5V
125
°
C
V
GS
=3.0V
25
°
C
1
2
3
4
5
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
80
70
60
50
40
30
20
2.8
2.6
2.4
2.2
2
V
GS
=10V
I
D
=5A
V
GS
=4.5V
V
GS
=10V
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=2A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
140
120
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=5A
125
°
C
60
125
°
C
25
°
C
40
25
°
C
20
2
4
6
8
10
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2013
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
V
DS
=15V
I
D
=20A
8
1200
800
400
0
6
C
iss
4
2
C
oss
C
rss
0
0
3
6
9
12
15
0
25
50
75
100
125
150
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
500
400
300
200
100
0
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
100
µ
s
R
DS(ON)
limited
1ms
10ms
DC
T
J(Max)
=175
°
C
T
C
=25
°
C
0.1
0.0
0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=2.0
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
P
D
0.1
0.01
Single Pulse
T
on
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2013
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
25
20
15
10
5
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
CASE
(
°
C)
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=50
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
P
D
0.01
0.001
Single Pulse
0.01
T
on
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2013
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
BV
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.0: October 2013
Page 6 of 6
