Alpha—Omega-Semicon-AOD2610E
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AOD2610E/AOI2610E/AOY2610E
60V N-Channel AlphaSGT
TM
General Description
Product Summary
• Trench Power AlphaSGT
TM
technology
• Low R
DS(ON)
• Low Gate Charge
• Low Eoss
V
DS
60V
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
46A
< 9.5mΩ
< 13.3mΩ
R
DS(ON)
(at V
GS
=4.5V)
• ESD protected
• RoHS and Halogen-Free Compliant
Typical ESD protection
HBM Class 2
Applications
100% UIS Tested
100% Rg
Tested
• High efficiency power supply
• Secondary synchronus rectifier
TO-252
DPAK
TO-251A
IPAK
TO251B
D
Top View
Top View
Top View
Bottom View
Bottom View
Bottom View
D
D
D
D
G
S
G
S
G
G
S
D
D
D
D
G
S
S
S
S
G
G
AOD2610E
AOI2610E
AOY2610E
Orderable Part Number
AOD2610E
Package Type
TO-252
Form
Tape & Reel
Minimum Order Quantity
2500
4000
4000
AOI2610E
AOY2610E
TO-251A
TO-251B
Tube
Tube
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
60
±20
46
V
V
V
GS
T
C
=25°C
Continuous Drain
Current
G
Pulsed Drain Current
C
I
D
T
C
=100°C
A
36.5
110
19
I
DM
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
Avalanche Current
C
I
DSM
A
15
I
AS
17
A
mJ
V
C
Avalanche energy
L=0.3mH
10µs
E
AS
43
I
V
DS
Spike
V
SPIKE
72
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
59.5
23.5
6.2
P
D
W
Power Dissipation
B
Power Dissipation
A
P
DSM
W
4.0
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t ≤
10s
20
50
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Steady-State
Steady-State
40
R
θ
JC
1.7
2.1
Rev.2.0: November 2016
Page 1 of 6
AOD2610E/AOI2619E/AOY2610E
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
60
V
V
DS
=60V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=55°C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±10
2.4
9.5
15.5
13.3
µA
V
V
GS(th)
V
DS
=V
GS,
I
D
=250
µ
A
1.4
1.8
7.7
V
GS
=10V, I
D
=20A
mΩ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
12.5
10.3
52
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A, V
GS
=0V
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.72
1
V
Maximum Body-Diode Continuous Current
G
46
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1100
300
28
pF
pF
pF
Ω
V
GS
=0V, V
DS
=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.6
1.2
2.0
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
14.5
7
25
13
nC
nC
nC
nC
ns
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=20A
Gate Source Charge
2.5
3.5
6.5
3.5
22
3
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=30V, R
L
=1.5
Ω
,
R
GEN
=3
Ω
ns
t
D(off)
t
f
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
t
rr
I
F
=20A, di/dt=500A/
µ
s
I
F
=20A, di/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19
65
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The Power
dissipation P
DSM
is based on R
θ
JA
t≤ 10s and the maximum allowed junction temperature of 150
°
C. The value in any given application depends on
the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
I. The
spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125
°
C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: November 2016
Page 2 of 6
AOD2610E/AOI2619E/AOY2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
10V
4.5V
V
DS
=5V
4V
80
60
40
20
0
6V
3.5V
3.0V
125
°
C
25
°
C
V
GS
=2.5V
4
1
2
3
4
5
0
1
2
3
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
12
10
8
2
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=10V
I
D
=20A
V
GS
=10V
V
GS
=4.5V
I
D
=20A
6
0.8
4
0
25
50
75
100
125
150
175
0
5
10
15
I
D
(A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
35
30
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=20A
125
°
C
125
°
C
25
°
C
25
°
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: November 2016
Page 3 of 6
AOD2610E/AOI2619E/AOY2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
V
DS
=30V
I
D
=20A
8
6
4
2
0
C
iss
1200
900
600
300
0
C
oss
C
rss
0
3
6
9
12
15
0
10
20
30
40
50
60
Q
g
(nC)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
DC
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
0.0
0.01
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
V
DS
(Volts)
V
GS
> or equal to 4.5V
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=2.1
°
C/W
P
DM
0.1
0.01
Single Pulse
T
on
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: November 2016
Page 4 of 6
AOD2610E/AOI2619E/AOY2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
50
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C)
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=50
°
C/W
R
0.1
P
DM
0.01
0.001
Single Pulse
0.01
T
on
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: November 2016
Page 5 of 6
AOD2610E/AOI2619E/AOY2610E
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
BV
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
Isd
t
rr
L
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.2.0: November 2016
Page 6 of 6
