Alpha—Omega-Semicon-AOD2922
| Part # | Alpha—Omega-Semicon-AOD2922 |
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AOD2922
100V N-Channel AlphaMOS
General Description
Product Summary
V
DS
• Latest Trench Power AlphaMOS (
α
MOS MV) technology
• Very Low R
DS(ON)
100V
7A
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
• Low Gate Charge
• Optimized for fast-switching applications
• RoHS and Halogen-Free Compliant
< 140m
ꢀ
< 176m
ꢀ
Application
100% UIS Tested
100% Rg
Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
TO-252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AOD2922
TO-252
2500
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
V
V
V
GS
±20
T
C
=25
°
C
7
Continuous Drain
Current
Pulsed Drain Current
C
I
D
T
C
=100
°
C
5
10
A
I
DM
T
A
=25
°
C
T
A
=70
°
C
3.5
Continuous Drain
Current
I
DSM
A
3
Avalanche Current
C
I
AS
3
A
mJ
V
Avalanche energy L=0.1mH
C
E
AS
0.5
V
DS
Spike
10us
V
SPIKE
120
17
T
C
=25
°
C
T
C
=100
°
C
T
A
=25
°
C
T
A
=70
°
C
P
D
W
Power Dissipation
B
Power Dissipation
A
8.5
5.0
P
DSM
W
°C
3.2
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
25
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
40
50
R
θ
JC
7.3
8.8
Rev.1.0: October 2013
Page 1 of 6
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
100
V
V
DS
=100V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
ꢁ
A
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250
µ
A
V
GS
=10V, I
D
=5A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.7
140
270
176
nA
V
V
GS(th)
1.7
2.2
117
224
140
8.5
m
ꢀ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=3A
V
DS
=5V, I
D
=5A
I
S
=1A,V
GS
=0V
m
ꢀ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.8
1.1
7
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
250
19
310
30
8
pF
pF
pF
ꢀ
V
GS
=0V, V
DS
=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2.5
f=1MHz
5
10.5
16
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
3.8
1.8
0.8
0.8
5
10
6
nC
nC
nC
nC
ns
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=5A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=50V, R
L
=10
Ω
,
R
GEN
=3
Ω
3
ns
t
D(off)
t
f
Turn-Off DelayTime
19
5
ns
Turn-Off Fall Time
ns
t
rr
I
F
=5A, dI/dt=500A/
µ
s
I
F
=5A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
16
52
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t
≤
10s and the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design, and the maximum temperature of 175
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=175
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
18
15
12
9
V
DS
=5V
10V
15
5V
12
4.5V
9
4V
6
6
3.5V
V
GS
=3V
125
°
C
3
0
3
25
°
C
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
240
200
160
120
80
2.8
2.6
2.4
2.2
2
V
GS
=10V
I
D
=5A
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=3A
V
GS
=10V
0.8
40
0
25
50
75
100 125 150 175 200
0
2
4
6
8
10
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
400
350
300
250
200
150
100
50
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=5A
125
°
C
125
°
C
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev.1.0: October 2013
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
V
DS
=50V
I
D
=5A
250
200
150
100
50
8
C
iss
6
4
C
oss
2
C
rss
0
0
0
1
2
3
4
5
0
20
40
60
80
100
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
200
150
100
50
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
DC
0.1
T
J(Max)
=175
°
C
T
C
=25
°
C
0
0.0
0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
V
DS
(Volts)
V
GS
> or equal to 4.5V
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=8.8
°
C/W
P
D
0.1
0.01
Single Pulse
0.001
T
on
T
1E-05
0.0001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2013
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
8
15
10
5
6
4
2
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
CASE
(
°
C)
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
J(Max)
=150
°
C
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=50
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
P
D
Single Pulse
0.01
0.001
T
on
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2013
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
BV
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.0: October 2013
Page 6 of 6
PD-02126
Document No.
Version
ALPHA & OMEGA
SEMICONDUCTOR
A
AOD2922 Marking Description
Title
TO252(DPAK) PACKAGE MARKING DESCRIPTION
D 2 9 2 2
Green product
NOTE:
LOGO
D2922
F
– AOS Logo
– Part number code
– Fab code
A
Y
– Assembly location code
– Year code
W
– Week code
L&T
– Assembly lot code
PART NO.
DESCRIPTION
Green product
Green product
CODE
D2922
D2922
AOD2922
AOD2922L
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
S
Y
M
B
O
L
DIMENSION IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
2.184
0.000
0.889
0.635
0.762
4.953
0.450
0.450
5.969
5.210
0.662
6.350
4.318
1.678
NOM.
2.286
—–
MAX.
2.388
0.127
1.143
0.889
1.143
5.461
0.610
0.610
6.223
5.380
0.862
6.731
4.901
1.878
MIN.
NOM.
0.090
—–
MAX.
A
0.086
0.000
0.035
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.026
0.250
0.170
0.066
0.094
0.005
0.045
0.035
0.045
0.215
0.024
0.024
0.245
0.212
0.034
0.265
0.193
0.074
A1
A2
b
1.041
0.762
0.840
5.340
0.508
0.508
6.096
5.249
0.762
0.041
0.030
0.033
0.210
0.020
0.020
0.240
0.207
0.030
0.260
0.190
0.070
0.090 BSC
0.180 BSC
0.395
0.060
0.115REF.
0.020
0.040
—–
b1
b2
c
RECOMMENDED LAND PATTERN
6.25 MIN.
c1
D
D1
D2
E
6.80 MIN.
6.604
4.826
6.60
E1
E2
e
1.50 MIN.
1.778
2.286 BSC
4.572 BSC
10.033
1.520
3.00 MIN.
e1
H
9.398
1.270
10.414
2.032
0.370
0.050
0.410
0.080
2.286
UNIT: mm
4.572 BSC
L
L1
L2
L3
L4
2.921 REF.
0.508
0.408
0.889
0.635
0.608
1.270
1.016
0.016
0.035
0.025
0.024
0.050
0.040
NOTE
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS. MOLD FLASH SHOULD BE LESS THAN
6 MILS.
2. DIMENSION L IS MEASURED IN GAUGE PLANE
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
5. REFER TO JEDEC TO-252 (AA)
1.016
—–
AOS Semiconductor
Product Reliability Report
AOD2922
,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
1
This AOS product reliability report summarizes the qualification result for AOD2922. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOD2922 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
routine monitored for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
III.
IV.
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product
Description:
• Latest Trench Power AlphaMOS (α
MOS MV) technology
• Very Low R
DS(ON)
• Low Gate Charge
• Optimized for fast
-switching applications
• RoHS
and Halogen-Free Compliant
Details refer to the datasheet.
II. Die / Package Information:
AOD2922
Process
Standard sub-micron
100V N-Channel AlphaMOS
TO252
Bare Cu
Solder Paste
Package Type
Lead Frame
Die Attach
Bond
Al & Cu wire
Mold Material
Moisture Level
Epoxy resin with silica filler
Level 1
2
III. Reliability Stress Test Summary and Results
Total
Sample
Size
Number
of
Failures
Reference
Standard
Test Item
Test Condition
Time Point
Temp = 150°C
,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
JESD22-A108
HTGB
HTRB
Temp = 150°C
,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
924 pcs
0
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
MSL
Precondition
5082 pcs
924 pcs
0
0
JESD22-A113
JESD22-A110
–
130°C ,
85%RH,
33.3 psia,
Vds = 80% of Vdsmax
96 hours
HAST
85°C , 85%RH,
Vds = 80% of Vdsmax
1000 hours
96 hours
924 pcs
924 pcs
0
0
JESD22-A101
JESD22-A102
H3TRB
121°C ,
29.7psia,
RH=100%
Autoclave
Temperature
Cycle
-65°C to
150°C ,
air to air,
250 / 500
cycles
924 pcs
924 pcs
462 pcs
0
0
0
JESD22-A104
JESD22-A103
AEC Q101
Temp = 150°C
1000 hrs
HTSL
Power
Cycling
15000
cycles
Tj = 100°C
Note:
The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion):
3.43
MTTF = 33270 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
Failure Rate
= Chi
2
x 10
9
/
[
2 (N) (H) (Af)
] =
3.43
MTTF =
10
9
/ FIT = 33270 years
Chi²
= Chi Squared Distribution, determined by the number of failures and confidence interval
N
= Total Number of units from burn-in tests
H
= Duration of burn-in testing
Af
= Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C
)
Acceleration Factor [
Af
] =
Exp
[Ea /
k
(1/Tj u
–
1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
259
87
Tj s
= Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u
=The use junction temperature in degree (Kelvin), K = C+273.16
k
=
Boltzm
ann’s
constant, 8.617164 X 10
-5
eV / K
3
