Alpha—Omega-Semicon-AOD2N100
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AOD2N100
1000V,2A N-Channel MOSFET
General Description
Product Summary
The AOD2N100 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply
designs.
V
DS
1100V@150
℃
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
2A
< 9
Ω
100% UIS Tested!
100% R
g
Tested!
TO252
DPAK
D
Top View
Bottom View
D
D
G
G
S
S
S
G
AOD2N100
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
1000
V
Gate-Source Voltage
V
GS
±30
2
V
A
T
C
=25
°
C
Continuous Drain
Current
B
I
D
T
C
=100
°
C
1.2
Pulsed Drain Current
C
I
DM
7
1.9
Avalanche Current
C
I
AR
A
Repetitive avalanche energy
C
E
AR
E
AS
dv/dt
54
mJ
Single pulsed avalanche energy
H
Peak diode recovery dv/dt
T
C
=25
°
C
108
5
mJ
V/ns
W
W/
o
C
83
P
D
Power Dissipation
B
Derate above 25
o
C
0.7
Junction and Storage Temperature Range
T
J
, T
STG
-50 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8″ from case for 5 seconds
T
L
300
°C
Thermal Characteristics
Parameter
Symbol
R
θ
JA
Typical
Maximum
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A,G
45
–
55
0.5
1.5
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
R
θ
CS
R
θ
JC
1.2
Rev.1.0 March 2013
Page 1 of 6
AOD2N100
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
ꢀ
A, V
GS
=0V, T
J
=25
°
C
I
D
=250
ꢀ
A, V
GS
=0V, T
J
=150
°
C
1000
BV
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
1100
1
V
BV
DSS
/
∆
TJ
V/
o
C
ID=250
ꢀ
A, VGS=0V
V
DS
=1000V, V
GS
=0V
V
DS
=800V, T
J
=125
°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V, I
D
=250
µ
A
V
GS
=10V, I
D
=1A
1
I
DSS
µ
A
10
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
9
n
Α
V
3.3
4
7.5
2
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Ω
S
V
DS
=40V, I
D
=1A
I
S
=1A,V
GS
=0V
V
SD
0.76
1
2
7
V
I
S
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
I
SM
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
380
20
477
31
580
45
pF
pF
pF
Ω
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1.5
1.5
2.7
3.1
4.0
4.8
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=800V, I
D
=2A
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
6
9.7
2.6
3.5
20
15
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=500V, I
D
=2A,
Turn-On Rise Time
19
R
G
=25
Ω
t
D(off)
t
f
Turn-Off DelayTime
29
Turn-Off Fall Time
21
t
rr
I
F
=2A,dI/dt=100A/
µ
s,V
DS
=100V
I
F
=2A,dI/dt=100A/
µ
s,V
DS
=100V
220
1.5
287
2.2
350
3.0
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
µ
C
A. The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25
°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C in
a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
H. L=60mH, I
AS
=1.9A, V
DD
=150V, R
G
=10
Ω
, Starting T
J
=25
°
C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 March 2013
Page 2 of 6
AOD2N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
2.5
2
10
6.5V
V
DS
=40V
-55
°
C
10V
6V
1.5
1
1
125
°
C
5.5V
25
°
C
0.5
0
V
GS
=5V
25
0.1
0
5
10
15
V
DS
(Volts)
20
30
2.00
4.00
6.00
V
GS
(Volts)
8.00
10.00
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
18
15
12
9
3
2.5
2
V
GS
=10V
I
D
=1A
V
GS
=10V
1.5
1
6
0.5
0
3
0
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Temperature (
°
C
)
I
D
(A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
125
°
C
25
°
C
0.9
0.8
-100
-50
0
50
100
150
200
0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0 March 2013
Page 3 of 6
AOD2N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
V
DS
=800V
I
D
=2A
C
iss
C
oss
6
C
rss
3
0
1
0
3
6
9
12
15
0.1
1
10
100
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
800
600
400
200
0
100
10
T
J(Max)
=150
°
C
T
C
=25
°
C
R
DS(ON)
limited
10
µ
s
100
µ
s
1
1ms
DC
0.1
0.01
10ms
T
J(Max)
=150
°
C
T
C
=25
°
C
1
10
100
1000
10000
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area
(Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=T
on
/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=1.5
°
C/W
1
0.1
P
D
Single Pulse
T
on
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0 March 2013
Page 4 of 6
AOD2N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
3
2.5
2
80
60
40
20
0
1.5
1
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C
)
Figure 12: Power De-rating (Note B)
T
CASE
(
°
C
)
Figure 13: Current De-rating (Note B)
400
300
200
100
0
T
J(Max)
=150
°
C
T
A
=25
°
C
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
In descending order
D=T
on
/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=55
°
C/W
1
0.1
P
D
0.01
T
on
Single Pulse
0.001
T
0.001
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0 March 2013
Page 5 of 6
AOD2N100
Gate Char
g
e
T
e
s
t
C
ircuit
&
W
av
e
f
orm
Vgs
Qg
10V
+
V
D
C
+
Qgs
Q
g
d
Vds
VDC
–
–
DUT
Vgs
Vds
Ig
Cha
r
ge
Re
s
i
sti
v
e
S
witching Test Circuit &
W
avef
o
rms
RL
Vds
90%
10%
+
D
U
T
Vdd
Vgs
V
D
C
Rg
–
Vgs
Vgs
t
d(
o
n
)
t
r
t
d(
o
f
f)
t
f
t
o
n
t
o
f
f
Unclamped Inductive Switching (UIS) Test Circuit & Wa
v
e
f
o
rms
L
2
E
A
R
=
1
/
2 LI
AR
BV
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recover
y
T
e
s
t
C
ircuit
&
W
ave
f
orms
Q
r
r
=
–
I
dt
Vds +
V
d
s –
Ig
DUT
Vgs
I
s
d
t
r
r
L
I
F
Isd
dI/dt
+
I
RM
Vdd
Vgs
V
D
C
Vdd
–
Vds
Rev.1.0 March 2013
Page 6 of 6
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
S
Y
M
B
O
L
DIMENSION IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
2.184
0.000
0.889
0.635
0.762
4.953
0.450
0.450
5.969
5.210
0.662
6.350
4.318
1.678
NOM.
2.286
—–
MAX.
2.388
0.127
1.143
0.889
1.143
5.461
0.610
0.610
6.223
5.380
0.862
6.731
4.901
1.878
MIN.
NOM.
0.090
—–
MAX.
A
0.086
0.000
0.035
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.026
0.250
0.170
0.066
0.094
0.005
0.045
0.035
0.045
0.215
0.024
0.024
0.245
0.212
0.034
0.265
0.193
0.074
A1
A2
b
1.041
0.762
0.840
5.340
0.508
0.508
6.096
5.249
0.762
0.041
0.030
0.033
0.210
0.020
0.020
0.240
0.207
0.030
0.260
0.190
0.070
0.090 BSC
0.180 BSC
0.395
0.060
0.115REF.
0.020
0.040
—–
b1
b2
c
RECOMMENDED LAND PATTERN
6.25 MIN.
c1
D
D1
D2
E
6.80 MIN.
6.604
4.826
6.60
E1
E2
e
1.50 MIN.
1.778
2.286 BSC
4.572 BSC
10.033
1.520
3.00 MIN.
e1
H
9.398
1.270
10.414
2.032
0.370
0.050
0.410
0.080
2.286
UNIT: mm
4.572 BSC
L
L1
L2
L3
L4
2.921 REF.
0.508
0.408
0.889
0.635
0.608
1.270
1.016
0.016
0.035
0.025
0.024
0.050
0.040
NOTE
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS. MOLD FLASH SHOULD BE LESS THAN
6 MILS.
2. DIMENSION L IS MEASURED IN GAUGE PLANE
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
5. REFER TO JEDEC TO-252 (AA)
1.016
—–
AOS Semiconductor
Product Reliability Report
AOD2N100
,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
1
This AOS product reliability report summarizes the qualification result for AOD2N100.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOD2N100 passes
AOS quality and reliability requirements. The released product will be categorized by the process
family and be routine monitored for continuously improving the product quality.
I. Reliability Stress Test Summary and Results
Total
Sample
Size
Number
of
Failures
Reference
Standard
Test Item
Test Condition
Time Point
Temp = 150°C
,
Vgs=100% of Vgsmax
Temp = 150°C
,
Vds=100% of Vdsmax
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
130°C ,
85%RH,
33.3 psia,
Vds = 80% of Vdsmax
up to 42V
85°C , 85%RH,
Vds = 80% of Vdsmax
up to 100V
121°C ,
29.7psia,
RH=100%
-65°C to
150°C ,
air to air,
168 / 500 /
1000 hours
168 / 500 /
1000 hours
462 pcs
0
JESD22-A108
JESD22-A108
HTGB
HTRB
462 pcs
0
Precondition
(Note A)
4620 pcs
693 pcs
693 pcs
0
0
0
JESD22-A113
JESD22-A110
JESD22-A101
–
96 hours
HAST
1000 hours
96 hours
H3TRB
924 pcs
924 pcs
0
0
JESD22-A102
JESD22-A104
Autoclave
Temperature
Cycle
250 / 500
cycles
Temp = 150°C
Tj = 100°C
1000 hrs
15000 cycles
693 pcs
693 pcs
0
0
JESD22-A103
AEC Q101
HTSL
Power Cycling
Note:
The reliability data presents total of available generic data up to the published date.
Note A: MSL (Moisture Sensitivity Level) 1 based on J-STD-020
II. Reliability Evaluation
FIT rate (per billion):
3.82
MTTF = 29919 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
Failure Rate
= Chi
2
x 10
9
/
[
2 (N) (H) (Af)
] =
3.82
MTTF =
10
9
/ FIT = 29919 years
Chi²
= Chi Squared Distribution, determined by the number of failures and confidence interval
N
= Total Number of units from burn-in tests
H
= Duration of burn-in testing
Af
= Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C
)
Acceleration Factor [
Af
] =
Exp
[Ea /
k
(1/Tj u
–
1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
1
Af
259
87
32
13
5.64
2.59
Tj s
= Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u
=The use junction temperature in degree (Kelvin), K = C+273.16
k
=
Boltzm
ann’s
constant, 8.617164 X 10
-5
eV / K
2
