Alpha—Omega-Semicon-AOD4184L
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AOD4184
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4184/L uses advanced trench technology and
design to provide excellent
R
DS(ON)
with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
AOD4184 and AOD4184L
are electrically identical.
V
DS
(V) = 40V
I
D
= 50A
(V
GS
= 10V)
R
DS(ON)
< 8m
Ω
(V
GS
= 10V)
R
DS(ON)
< 11m
Ω
(V
GS
= 4.5V)
-RoHS Compliant
-AOD4184L is Halogen Free
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings
T =25°C unless otherwise noted
A
Parameter
Symbol
Maximum
Units
V
DS
Drain-Source Voltage
40
V
V
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,H
Pulsed Drain Current
C
Avalanche Current
C
±20
50
T
C
=25°C
T
C
=100°C
I
D
40
A
I
DM
I
AR
E
AR
120
35
Repetitive avalanche energy L=0.
1
mH
C
mJ
W
61
T
C
=25°C
50
P
D
Power Dissipatio
n
B
T
C
=100°C
25
T
A
=25°C
2.3
P
DSM
Power Dissipatio
n
A
T
A
=70°C
1.45
-55 to 175
T
J
, T
STG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
18
44
Max
22
55
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A,G
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Case
D,F
R
θ
JC
2.4
Alpha & Omega Semiconductor, Ltd.
AOD4184
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
µ
A, V
GS
=0V
40
V
V
DS
=40V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
= ±20V
±100
3
nA
V
V
GS(th)
I
D(ON)
V
DS
=V
GS
I
D
=250
µ
A
1.7
2.2
V
GS
=10V, V
DS
=5V
120
A
V
GS
=10V, I
D
=20A
6.7
11
8
R
DS(ON)
T
J
=125°C
Static Drain-Source On-Resistance
13
11
m
Ω
V
GS
=4.5V, I
D
=15A
8.5
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
100
0.72
S
V
A
1
Maximum Body-Diode Continuous Current
20
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1500
215
135
3.5
pF
pF
pF
Ω
V
GS
=0V, V
DS
=20V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
2
5
SWITCHING PARAMETERS
Q
g
(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
27.2
13.6
4.5
35.4
nC
nC
nC
nC
ns
Q
g
(4.5V)
V
GS
=10V, V
DS
=20V,
I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
6.4
6.4
V
GS
=10V, V
DS
=20V, R
L
=1
Ω
,
R
GEN
=3
Ω
17.2
29.6
16.8
29
ns
t
D(off)
t
f
ns
ns
t
rr
I
F
=20A, dI/dt=100A
/
µ
s
I
F
=20A, dI/dt=100A
/
µ
s
38
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Q
rr
26
A: The value of R
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
and current rating I
DSM
are based
θ
JA
DSM
on T
J(MAX)
=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P
is based on
T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
D
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature
T
J(MAX)
=175°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case
R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <30
0
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of
T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
2
G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with
T
=
25°C.
A
H. The
maximum current rating is limited by bond-wires.
Rev0: March
2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
100
120
V
DS
=5V
10V
100
80
60
40
20
0
6.0V
80
60
40
20
0
25°C
4.5V
4.0V
125°C
V
GS
=3.5V
`
2
2.5
3
3.5
GS
(Volts)
4
4.5
0
1
2
3
4
5
V
V
DS
(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
2.2
2
10
9
8
7
6
5
V
GS
=10V
I
D
=20A
V
GS
=4.5V
V
GS
=10V
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=15A
0.8
0.6
-50 -25
0
25 50 75
100 125 150 175 200
0
5
10
15
20
25
30
I
D
(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction
Temperature
25
20
15
10
5
100
10
I
D
=20A
1
125°C
0.1
0.01
125°C
25°C
25°C
0.001
0.0001
0.00001
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOD4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
2500
2000
1500
1000
500
10
8
V
DS
=20V
I
D
=20A
C
iss
6
4
2
C
oss
C
rss
0
0
0
5
10
15
20
25
30
0
10
20
V
DS
(Volts)
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
1500
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
1200
900
600
300
0
10us
100us
1ms
10ms
1
T
J(Max)
=175°C
T
C
=25°C
DC
0.1
0.1
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
VDS (Volts)
Pulse Width (s)
Figure 9:Maximum Forward Biased
Safe Operating Area(NoteF)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
c
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=3°C/W
P
D
0.1
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
25
50
75
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
0
25
50
75
CASE
(°C)
Figure 12: Current De-rating (Note B)
100
125
150
175
T
10000
1000
100
10
T
J(Max)
=150°C
T
A
=25°C
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=55°C/W
0.1
P
D
0.01
0.001
T
on
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
