Alpha—Omega-Semicon-AOD4186
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AOD4186
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4186 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This
device is ideal for low
voltage inverter applications.
V
DS
(V) =40V
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
I
D
= 35A
R
DS(ON)
< 15m
Ω
DS(ON)
< 19m
Ω
R
– RoHS Compliant
– Halogen Free
100% UIS Tested!
100%
R
g
Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
DS
Drain-Source Voltage
40
V
V
GS
I
D
I
DM
I
DSM
Gate-Source Voltage
Continuous Drain
Current
G
±20
V
A
T
C
=25°C
35
T
C
=100°C
27
Pulsed Drain Current
C
70
T
A
=25°C
T
A
=70°C
10
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
A
8
24
I
AR
A
E
AR
29
mJ
T
C
=25°C
Power Dissipation
B
T
C
=100°C
50
P
D
W
25
T
A
=25°C
2.5
P
DSM
W
Power Dissipation
A
T
A
=70°C
1.6
T
J
, T
STG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Steady-State
Steady-State
R
θ
JC
2.5
Alpha & Omega Semiconductor, Ltd.
AOD4186
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
µ
A, V
GS
=0V
40
V
V
DS
=40V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
100
2.7
nA
V
V
GS(th)
I
D(ON)
1.7
2.2
100
A
V
GS
=10V, I
D
=20A
12.4
20
15
24
19
m
Ω
m
Ω
R
DS(ON)
T
J
=125°C
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=15A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
14.5
60
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
60
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
780
90
980
130
80
1200
170
110
5.7
pF
pF
pF
Ω
V
GS
=0V, V
DS
=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
48
V
GS
=0V, V
DS
=0V, f=1MHz
1.9
3.8
SWITCHING PARAMETERS
Q
g
(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.5
7
17
9
20
11
3
nC
nC
nC
nC
ns
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
V
GS
=10V, V
DS
=20V, I
D
=20A
2
2.5
4.5
6
2.7
6.3
12
26
7
ns
V
GS
=10V, V
DS
=20V, R
L
=1.0
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
ns
ns
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
9
12
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
38
ns
Q
rr
24
nC
2
A. The value of
R
θ
JA
is measured with the device mounted on 1in
FR-4 board with 2oz. Copper, in a still air environment with T
=25°C. The Power
A
dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation
P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive
rating, pulse width limited by junction temperature
T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case
R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <30
0
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of
T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
Rev 1 :
May-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD4186
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
6V
10V
V
DS
=5V
4.5V
4V
125°C
25°C
4
V
GS
=3.5V
4
0
1
2
3
5
6
0
1
2
3
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
20
2
18
16
14
12
10
8
1.8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=20A
V
GS
=4.5V
V
GS
=10V
V
GS
=4.5V
I
D
=15A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
I
D
(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
35
30
25
20
15
10
1.0E+02
1.0E+01
I
D
=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
0.6
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
V
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
AOD4186
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
1200
900
600
300
0
V
DS
=20V
I
D
=20A
8
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
g
(nC)
15
20
0
10
20
V
DS
(Volts)
30
40
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
10
µ
s
R
DS(ON)
T
J(Max)
=175°C
100
µ
s
T
C
=25°C
DC
1ms
10ms
T
J(Max)
=175°C
T
C
=25°C
40
0.1
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
T
R
θ
JC
=3°C/W
P
D
0.1
Single Pulse
0.0001
T
on
T
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD4186
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
50
40
30
20
10
0
T
A
=25°C
T
A
=100°C
T
A
=125°C
T
A
=150°C
10
0.000001
0
25
50
75
100
125
150
175
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
T
CASE
(°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
0
T
A
=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
T
CASE
(°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=50°C/W
0.1
0.01
Single Pulse
P
D
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
AOD4186
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
S
Y
M
B
O
L
DIMENSION IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
2.184
0.000
0.889
0.635
0.762
4.953
0.450
0.450
5.969
5.210
0.662
6.350
4.318
1.678
NOM.
2.286
—–
MAX.
2.388
0.127
1.143
0.889
1.143
5.461
0.610
0.610
6.223
5.380
0.862
6.731
4.901
1.878
MIN.
NOM.
0.090
—–
MAX.
A
0.086
0.000
0.035
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.026
0.250
0.170
0.066
0.094
0.005
0.045
0.035
0.045
0.215
0.024
0.024
0.245
0.212
0.034
0.265
0.193
0.074
A1
A2
b
1.041
0.762
0.840
5.340
0.508
0.508
6.096
5.249
0.762
0.041
0.030
0.033
0.210
0.020
0.020
0.240
0.207
0.030
0.260
0.190
0.070
0.090 BSC
0.180 BSC
0.395
0.060
0.115REF.
0.020
0.040
—–
b1
b2
c
RECOMMENDED LAND PATTERN
6.25 MIN.
c1
D
D1
D2
E
6.80 MIN.
6.604
4.826
6.60
E1
E2
e
1.50 MIN.
1.778
2.286 BSC
4.572 BSC
10.033
1.520
3.00 MIN.
e1
H
9.398
1.270
10.414
2.032
0.370
0.050
0.410
0.080
2.286
UNIT: mm
4.572 BSC
L
L1
L2
L3
L4
2.921 REF.
0.508
0.408
0.889
0.635
0.608
1.270
1.016
0.016
0.035
0.025
0.024
0.050
0.040
NOTE
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS. MOLD FLASH SHOULD BE LESS THAN
6 MILS.
2. DIMENSION L IS MEASURED IN GAUGE PLANE
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
5. REFER TO JEDEC TO-252 (AA)
1.016
—–
