Alpha—Omega-Semicon-AOD444
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AOD444/AOI444
60V N-Channel
MOSFET
General Description
Product Summary
V
DS
The AOD444/AOI444 combine advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. Those
devices are suitable for use
in PWM, load switching and general purpose applications.
60V
12A
I
D
(at V
GS
=10V)
< 60m
Ω
< 85m
Ω
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO-251A
IPAK
D
TopView
Bottom View
TopView
Bottom View
D
D
D
G
S
S
G
G
D
G
S
D
S
G
S
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
DS
Drain-Source Voltage
60
V
V
GS
I
D
I
DM
I
DSM
Gate-Source Voltage
Continuous Drain
Current
G
±20
V
A
T
C
=25°C
12
T
C
=100°C
9
Pulsed Drain Current
C
30
T
A
=25°C
T
A
=70°C
4
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
C
A
3
19
I
AS
, I
AR
A
E
AS
, E
AR
18
mJ
T
C
=25°C
20
P
D
W
Power Dissipation
B
Power Dissipation
A
T
C
=100°C
T
A
=25°C
T
A
=70°C
10
2.1
P
DSM
W
1.3
T
J
, T
STG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
17.4
50
Max
30
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
60
Steady-State
Steady-State
R
θ
JC
4
7.5
Rev 0: Aug 2009
Page 1 of 6
AOD444/AOI444
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
µ
A, V
GS
=0V
60
V
V
DS
=48V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
100
3
nA
V
V
GS(th)
I
D(ON)
1
2.4
30
A
V
GS
=10V, I
D
=12A
47
85
60
100
85
m
Ω
m
Ω
R
DS(ON)
T
J
=125°C
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
DS
=5V, I
D
=20A
67
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
14
S
V
A
I
S
=1A,V
GS
=0V
0.74
1
Maximum Body-Diode Continuous Current
12
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
360
40
450
61
540
80
pF
pF
pF
Ω
V
GS
=0V, V
DS
=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
16
27
40
V
GS
=0V, V
DS
=0V, f=1MHz
0.6
1.4
2.0
SWITCHING PARAMETERS
Q
g
(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.5
3.8
1.2
1.9
4.2
3.4
16
10
5
nC
nC
nC
nC
ns
Q
g
(4.5V)
V
GS
=10V, V
DS
=30V, I
D
=12A
Q
gs
Q
gd
t
D(on)
t
r
V
GS
=10V, V
DS
=30V, R
L
=2.5
Ω
,
R
GEN
=3
Ω
ns
t
D(off)
t
f
ns
2
ns
t
rr
I
F
=12A, dI/dt=100A/
µ
s
I
F
=12A, dI/dt=100A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
27
30
35
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation
P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2009
Page 2 of 6
AOD444/AOI444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
V
DS
=5V
7V
6V
5V
10V
4.5V
4V
25°C
125°C
4
V
GS
=3.5V
0
0
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
100
90
80
70
60
50
40
30
2.4
2.2
2
V
GS
=10V
I
D
=12A
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=6A
V
GS
=10V
0.8
0
5
10
15
20
0
25
50
75
100 125 150 175 200
I
D
(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
130
110
90
1.0E+01
I
D
=12A
1.0E+00
125°C
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
70
25°C
50
25°C
30
0.0
0.2
0.4
0.6
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
V
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Aug 2009
Page 3 of 6
AOD444/AOI444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
700
600
500
400
300
200
100
0
V
DS
=30V
I
D
=12A
8
C
iss
6
4
C
oss
2
C
rss
0
0
2
4
6
8
0
5
10
15
V
DS
(Volts)
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
10
µ
s
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
1ms
10ms
R
DS(ON)
DC
T
J(Max)
=175°C
T
C
=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
T
R
θ
JC
=7.5°C/W
0.1
P
D
T
on
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Aug 2009
Page 4 of 6
AOD444/AOI444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
100
10
1
T
A
=25°C
T
A
=100°C
T
A
=150°C
T
A
=125°C
0
0
25
50
75
100
125
150
175
1
10
Time in avalanche, t
A
(
µ
s)
100
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Figure 12: Single Pulse Avalanche capability (Note
C)
10000
1000
100
10
16
14
12
10
8
T
A
=25°C
6
4
2
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
T
CASE
(°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=60°C/W
0.1
P
D
0.01
0.001
Single Pulse
T
on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Aug 2009
Page 5 of 6
AOD444/AOI444
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev 0: Aug 2009
Page 6 of 6
