Alpha—Omega-Semicon-AOD458
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AOD458
250V,14A N-Channel MOSFET
General Description
Product Summary
The AOD458 has been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular A
C
–
DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
300V@150
℃
14A
V
DS
I
D
(at V
GS
=10V)
<0.28
Ω
R
DS(ON)
(at V
GS
=10V)
100% UIS Tested!
100% R
g
Tested!
TO252
DPAK
D
Top View
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
250
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±30
Continuous Drain
Current
B
Pulsed Drain Current
C
Avalanche Current
C
T
C
=25°C
14
I
D
T
C
=100°C
10
A
I
DM
32
3.4
173
346
5
I
AR
A
C
Repetitive avalanche energy
Single pulsed avalanche energy
H
Peak diode recovery dv/dt
T
C
=25°C
E
AR
E
AS
dv/dt
mJ
mJ
V/ns
W
150
P
D
Power Dissipation
B
Derate above 25
o
C
1
W/ C
o
-50 to 175
T
J
, T
STG
T
L
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8″ from case for 5 seconds
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
Symbol
R
θ
JA
Typical
Maximum
Units
°C/W
°C/W
°C/W
45
–
55
0.5
1
R
θ
CS
R
θ
JC
0.7
Rev0: April 2011
Page 1 of 6
AOD458
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
250
BV
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
300
V
BV
DSS
V/
o
C
ID=250µA, VGS=0V
0.27
/
∆
TJ
V
DS
=250V, V
GS
=0V
1
I
DSS
µ
A
V
DS
=200V, T
J
=125°C
10
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
DS
=0V, V
GS
=±30V
±100
4.5
Gate-Body leakage current
Gate Threshold Voltage
n
Α
V
V
DS
=5V, I
D
=250
µ
A
3
3.8
0.22
10
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
V
GS
=10V, I
D
=7A
DS
=40V, I
D
=7A
0.28
Ω
S
V
SD
I
S
=1A,V
GS
=0V
0.74
1
V
I
S
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
14
32
A
I
SM
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
505
70
3
637
104
7.1
770
140
12
pF
pF
pF
Ω
V
V
GS
=0V, V
DS
=25V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1.3
2.6
3.9
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9
12
3.8
4.6
21
15
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=200V, I
D
=14A
V
GS
=10V, V
DS
=125V, I
D
=14A,
58
R
G
=25
Ω
t
D(off)
t
f
29
33
t
rr
I
F
=14A,dI/dt=100A/
µ
s,V
DS
=100V
I
F
=14A,dI/dt=100A/
µ
s,V
DS
=100V
120
1
150
1.24
180
1.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
µ
C
A. The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C in
a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature
T
J(MAX)
=175°C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impe
d
a
nce which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of
T
J(MAX)
=175°C.
G.These tests are performed with the device mounted on 1 i
n
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=3.4A, V
DD
=150V, R
G
=10
Ω
, Starting T
J
=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: April 2011
Page 2 of 6
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
100
-55°C
V
DS
=40V
20
10V
10
15
125°C
6.5V
10
1
6V
5
25°C
7
V
GS
=5.5V
0.1
0
2
3
4
5
6
8
9
10
0
5
10
15
20
25
30
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3
2.5
2
V
GS
=10V
I
D
=7A
V
GS
=10V
1.5
1
0.5
0
0
5
10
15
D
(A)
20
25
30
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
I
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
1.0E+01
1.1
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
1
0.9
0.8
0
-100
-50
50
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
100
150
200
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Rev0: April 2011
Page 3 of 6
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
C
iss
V
DS
=200V
I
D
=14A
C
oss
6
C
rss
3
0
1
0
4
8
12
16
20
0.1
1
10
100
V
DS
(Volts)
Q
g
(nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
800
600
400
200
0
10
µ
s
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
10
1
100
µ
s
1ms
10ms
DC
0.1
0.01
T
J(Max)
=175°C
T
C
=25°C
0.0001
0.001
0.01
0.1
1
10
1
10
100
1000
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area
(Note F)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=1°C/W
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: April 2011
Page 4 of 6
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
150
120
90
15
12
9
6
60
3
30
0
0
0
25
50
75
100
125
150
175
0
25
50
75
CASE
(°C)
Figure 13: Current De-rating (Note B)
100
125
150
175
T
CASE
(°C)
T
Figure 12: Power De-rating (Note B)
400
300
200
100
0
T
A
=25°C
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=55°C/W
0.1
0.01
0.001
0.0001
P
D
T
on
T
Single Pulse
0.01
0.0001
0.001
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev0: April 2011
Page 5 of 6
AOD458
Gate Char
g
e
T
est Circuit &
W
a
v
e
f
orm
Vgs
Qg
10V
+
V
D
C
+
Qgs
Q
g
d
Vds
VDC
–
–
DUT
Vgs
Vds
Ig
Cha
r
ge
Re
s
i
sti
v
e
S
witching Tes
t
C
ircuit &
W
avef
o
rms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
V
D
C
Rg
–
Vgs
Vgs
t
d
(
o
n
)
t
r
t
d(
o
f
f)
t
f
t
on
t
o
f
f
Unclamped Inductive Switching (UIS) Test Circuit & Wa
v
ef
o
rms
L
2
E
A
R
=
1
/
2 LI
AR
BV
D
SS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recover
y
T
e
s
t
C
ircuit & Waveforms
Q
rr
= –
I
dt
Vds +
V
d
s –
Ig
DUT
Vgs
I
s
d
t
rr
L
I
F
I
s
d
dI/dt
+
I
R
M
Vdd
Vgs
V
D
C
Vdd
–
Vds
Rev0: April 2011
Page 6 of 6
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
S
Y
M
B
O
L
DIMENSION IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
2.184
0.000
0.889
0.635
0.762
4.953
0.450
0.450
5.969
5.210
0.662
6.350
4.318
1.678
NOM.
2.286
—–
MAX.
2.388
0.127
1.143
0.889
1.143
5.461
0.610
0.610
6.223
5.380
0.862
6.731
4.901
1.878
MIN.
NOM.
0.090
—–
MAX.
A
0.086
0.000
0.035
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.026
0.250
0.170
0.066
0.094
0.005
0.045
0.035
0.045
0.215
0.024
0.024
0.245
0.212
0.034
0.265
0.193
0.074
A1
A2
b
1.041
0.762
0.840
5.340
0.508
0.508
6.096
5.249
0.762
0.041
0.030
0.033
0.210
0.020
0.020
0.240
0.207
0.030
0.260
0.190
0.070
0.090 BSC
0.180 BSC
0.395
0.060
0.115REF.
0.020
0.040
—–
b1
b2
c
RECOMMENDED LAND PATTERN
6.25 MIN.
c1
D
D1
D2
E
6.80 MIN.
6.604
4.826
6.60
E1
E2
e
1.50 MIN.
1.778
2.286 BSC
4.572 BSC
10.033
1.520
3.00 MIN.
e1
H
9.398
1.270
10.414
2.032
0.370
0.050
0.410
0.080
2.286
UNIT: mm
4.572 BSC
L
L1
L2
L3
L4
2.921 REF.
0.508
0.408
0.889
0.635
0.608
1.270
1.016
0.016
0.035
0.025
0.024
0.050
0.040
NOTE
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS. MOLD FLASH SHOULD BE LESS THAN
6 MILS.
2. DIMENSION L IS MEASURED IN GAUGE PLANE
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
5. REFER TO JEDEC TO-252 (AA)
1.016
—–
AOS Semiconductor
Product Reliability Report
AOD458
,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
1
This AOS product reliability report summarizes the qualification result for AOD458. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOD458 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
III.
IV.
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product
Description:
The AOD458 has been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications. By
providing low R
DS(on)
, Ciss and Crss along with guaranteed avalanche capability this device can
be adopted quickly into new and existing offline power supply designs. This device is ideal for
boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and
LED backlighting.
-RoHS Compliant
-Halogen Free
Details refer to the datasheet.
II. Die / Package Information:
AOD458
Process
Standard sub-micron
Low voltage N channel process
3 leads TO252
Bare Cu
Soft solder
Package Type
Lead Frame
Die Attach
Bond wire
Al wire
Mold Material
Moisture Level
Epoxy resin with silica filler
Up to Level 1 *
Note *
based on info provided by assembler and mold compound supplier
2
III. Result of Reliability Stress for AOD458
Test Item
Test Condition
Time
Point
Lot
Attribution
Total
Sample size
of
Failures
Number
Reference
Standard
9 lots
1210pcs
0
JESD22-
A113
MSL
Precondition
–
168hr 85
°
c
/85%RH +3 cycle
reflow@260
°
c
168hrs
500 hrs
1000 hrs
77pcs
0
JESD22-
A108
HTGB
HTRB
Temp = 150
°
c ,
Vgs=100% of
Vgsmax
1 lot
(Note A*)
77 pcs / lot
77pcs
168hrs
500 hrs
1000 hrs
0
0
JESD22-
A108
Temp = 150
°
c ,
Vds=80% of
Vdsmax
1 lot
(Note A*)
77 pcs / lot
495pcs
100 hrs
96 hrs
9 lots
JESD22-
A110
HAST
130 +/- 2
°
c ,
85%RH,
33.3 psi, Vgs =
100% of Vgs max
(Note A*)
5 lots
55 pcs / lot
275pcs
0
0
JESD22-
A102
Pressure Pot
121
°
c , 29.7psi,
RH=100%
(Note A*)
8 lots
55 pcs / lot
440pcs
250 / 500
cycles
JESD22-
A104
Temperature
Cycle
-65
°
c to
150
°
c ,
air to air,
(Note A*)
55 pcs / lot
Note A:
The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 23
MTTF = 4957 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOD458). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
Failure Rate
= Chi
2
x 10
9
/
/
[
2x2x77x1000x258
]
= 23
[
2 (N) (H) (Af)
]
= 1.83 x 10
9
MTTF =
10
9
/ FIT = 4.34 x 10
7
hrs = 4957 years
Chi²
= Chi Squared Distribution, determined by the number of failures and confidence interval
N
= Total Number of units from HTRB and HTGB tests
H
= Duration of HTRB/HTGB testing
Af
= Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55
°
C
)
Acceleration Factor [
Af
] =
Exp
[Ea /
k
(1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
258
87
Tj s
= Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u
=The use junction temperature in degree (Kelvin), K = C+273.16
k
=
Boltzmann’s constant, 8.617164 X 10
-5
eV / K
3
