Alpha—Omega-Semicon-AOD5B60D
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AOD5B60D
600V, 5A Alpha IGBT
TM
with Diode
General Description
Product Summary
The Alpha IGBT
TM
line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The co-
packaged soft diode is optimized to minimize losses in
motor control applications.
V
CE
600V
5A
I
C
(T
C
=100°C)
V
CE(sat)
(T
C
=25°C)
1.55V
TO252
DPAK
C
Top View
Bottom View
C
C
E
G
G
E
G
E
AOD5B60D
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
CE
AOD5B60D
Units
Collector-Emitter Voltage
Gate-Emitter Voltage
600
±20
23
V
V
V
GE
T
C
=25°C
Continuous Collector
Current
A
I
C
A
T
C
=100°C
10
Pulsed Collector Current, Limited by T
Jmax
I
CM
I
LM
20
A
A
Turn off SOA, V
CE
≤
600V, Limited by T
Jmax
20
10
5
T
C
=25°C
Continuous Diode
I
F
A
A
T
C
=100°C
Forward Current
Diode Pulsed Current, Limited by T
Jmax
I
FM
20
Short circuit withstanding time V
GE
= 15V, V
CE
t
SC
10
µ
s
≤
400V, delay between short circuits
≥
1.0s,
T
C
=25°C
T
C
=25°C
54.4
21.7
P
D
W
T
C
=100°C
Power Dissipation
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8″ from case for 5 seconds
T
L
300
°C
Thermal Characteristics
Parameter
Symbol
AOD5B60D
Units
°C/W
°C/W
°C/W
R
θ
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
Note A:I
C
limited by package limitation
55
2.3
3
JA
R
θ
JC
R
θ
JC
Rev.4.0: Jan 2014
Page 1 of 9
AOD5B60D
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BV
CES
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
600
–
1.55
1.78
1.85
1.46
1.36
1.3
6
–
V
V
T
J
=25°C
–
–
–
–
–
–
–
–
–
–
–
–
1.8
V
GE
=15V, I
C
=5A
T
J
=125°C
T
J
=150°C
T
J
=25°C
–
–
1.75
–
V
F
V
GE
=0V, I
C
=5A
Diode Forward Voltage
V
V
T
J
=125°C
T
J
=150°C
–
V
GE(th)
I
CES
V
CE
=V
GE
, I
C
=1mA
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
–
T
J
=25°C
T
J
=125°C
T
J
=150°C
–
10
100
500
±100
–
V
CE
=600V, V
GE
=0V
–
µ
A
–
I
GES
g
FS
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=5A
Gate-Emitter Leakage Current
Forward Transconductance
–
nA
S
2.3
DYNAMIC PARAMETERS
C
ies
C
oes
C
res
Q
g
Input Capacitance
–
–
–
–
–
–
367
34
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
GE
=0V, V
CE
=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1.47
9.4
V
GE
=15V, V
CE
=480V, I
C
=5A
Q
ge
Q
gc
Gate to Emitter Charge
3.15
3.6
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits
≥
1.0s
I
C(SC)
V
GE
=15V, V
CE
=400V, R
G
=60
Ω
–
–
21
3
–
–
A
V
GE
=0V, V
CE
=0V, f=1MHz
R
g
Gate Resistance
Ω
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°C)
t
D(on)
t
r
t
D(off)
t
f
Turn-On Delay Time
–
–
–
–
–
–
–
–
–
–
12
15
–
–
–
–
–
–
–
–
–
–
ns
ns
Turn-On Rise Time
T
J
=25°C
V
GE
=15V, V
CE
=400V, I
C
=5A,
R
G
=60
Ω,
Turn-Off Delay Time
82
ns
Turn-Off Fall Time
10
ns
Parasitic
Ι
nductance=75nH
E
on
E
off
E
total
t
rr
Turn-On Energy
0.14
0.04
0.18
98
mJ
mJ
mJ
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
ns
T
J
=25°C
Q
rr
I
rm
µ
C
0.23
4.4
I
F
=5A,dI/dt=200A/
µ
s,V
CE
=400V
A
SWITCHING PARAMETERS, (Load Inductive, T
J
=150°C)
t
D(on)
t
r
t
D(off)
t
f
Turn-On DelayTime
–
–
–
–
–
–
–
–
–
–
11
16
–
–
–
–
–
–
–
–
–
–
ns
ns
Turn-On Rise Time
T
J
=150°C
V
GE
=15V, V
CE
=400V, I
C
=5A,
R
G
=60
Ω,
Turn-Off Delay Time
110
14
ns
Turn-Off Fall Time
ns
E
on
E
off
E
total
t
rr
Turn-On Energy
0.18
0.08
0.26
166
0.4
mJ
mJ
mJ
Parasitic Inductance
=
75nH
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
ns
T
J
=150°C
Q
rr
I
rm
µ
C
I
F
=5A,dI/dt=200A/
µ
s,V
CE
=400V
5.2
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: Jan 2014
Page 2 of 9
AOD5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
25
20
15
10
5
20V
20V
30
25
20
17V
17V
15V
15V
13V
15
10
5
13V
11V
9V
11V
9V
V
GE
=7V
V
GE
= 7V
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
CE
(V)
V
CE
(V)
Fig 1: Output Characteristic
(T
j
=25°C )
Fig 2: Output Characteristic
(T
j
=150°C )
40
35
30
25
20
15
10
5
20
15
10
5
V
CE
=20V
-40
°
C
-40
°
C
150
°
C
25
°
C
150
°
C
25
°
C
0
0
4
7
10
13
16
0.0
0.5
1.0
1.5
V
F
(V)
2.0
2.5
3.0
V
GE
(V)
Fig 3: Transfer Characteristic
Fig 4: Diode Characteristic
4
3
2
1
0
60
50
40
30
20
10
0
30
25
20
15
10
5
I
C
=10A
I
C
=5A
I
C
=2.5A
0
0
25
50
75
100
125
150
5
8
11
V
GE
(V)
Fig 6:
V
GE
vs. Short Circuit Time
(V
CE
=400V,T
C
=25°C
14
17
20
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
)
Rev.4.0: Jan 2014
Page 3 of 9
AOD5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
1000
C
ies
V
CE
=480V
I
C
=5A
100
10
1
C
oes
6
3
C
res
0
0
2
4
6
8
10
0
5
10
15
20
V
CE
(V)
25
30
35
40
Q
g
(nC)
Fig 7: Gate-Charge Characteristics
Fig 8: Capacitance Characteristic
100
10
1
10
100
1,000
V
CE
(V)
Fig 10: Reverse Bias SOA
(T
j
=150°C,V
GE
=15V)
60
50
40
30
20
10
0
10
8
6
4
2
0
25
50
75
T
CASE
(°C)
100
125
150
25
50
75
100
T
CASE
(°C)
Fig 12: Current De-rating
125
150
Fig 11: Power Disspation as a Function of Case
Rev.4.0: Jan 2014
Page 4 of 9
AOD5B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
10,000
1,000
100
10
Td(off)
Tf
Td(off)
Tf
Td(on)
Tr
Td(on)
Tr
1
1
0
3
6
9
12
0
100
200
300
R
g
(
Ω
)
400
500
600
I
C
(A)
Figure 13: Switching Time vs. I
C
(T
j
=150°C,V
GE
=15V,V
CE
=400V,R
g
=60
Ω
)
Figure 14: Switching Time vs. R
g
(T
j
=150°C,V
GE
=15V,V
CE
=400V,I
C
=5A)
1000
100
10
10
Td(off)
Tf
Td(on)
Tr
8
6
4
2
0
1
0
30
60
T
J
(°C)
Figure 16: V
GE(TH)
vs. T
j
90
120
150
0
50
100
T
J
(°C)
150
200
Figure 15: Switching Time vs.T
j
( V
GE
=15V,V
CE
=400V,I
C
=5A,R
g
=60
Ω
)
Rev.4.0: Jan 2014
Page 5 of 9
AOD5B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eoff
Eon
Eon
Etotal
Etotal
0
3
6
9
12
0
100
200
300
R
g
(
Ω
)
400
500
600
I
C
(A)
Figure 17: Switching Loss vs. I
C
(T
j
=150°C,V
GE
=15V,V
CE
=400V,R
g
=60
Ω
)
Figure 18: Switching Loss vs. R
g
(T
j
=150°C,V
GE
=15V,V
CE
=400V,I
C
=5A)
0.4
0.3
0.2
0.1
0
0.4
Eoff
Eoff
Eon
Eon
0.3
0.2
0.1
0.0
Etotal
Etotal
0
25
50
75
T
J
(°C)
Figure 19: Switching Loss vs. T
j
(V
GE
=15V,V
CE
=400V,I
C
=5A,R
g
=60
Ω
)
100
125
150
175
200
250
300
350
V
CE
(V)
400
450
500
Figure 20: Switching Loss vs. V
CE
(T
j
=150°C,V
GE
=15V,I
C
=5A,R
g
=60
Ω
)
Rev.4.0: Jan 2014
Page 6 of 9
AOD5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
2.2
1.7
1.2
0.7
0.2
15A
10A
5A
V
CE
=600V
IF=1A
V
CE
=400V
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Temperature (°C )
Temperature (°C )
Fig 22: Diode Forward Voltage vs. Junction
Temperature
Fig 21:
Reverse Leakage Current vs. Junction
Temperature
800
700
600
500
400
300
200
100
0
40
35
30
25
20
15
10
5
300
250
200
150
100
50
18
15
12
9
150
°
C
150
°
C
T
rr
Q
rr
25
°
C
150
°
C
6
25
°
C
150
°
C
I
rm
S
3
25
°
C
25
°
C
0
0
0
0
3
6
9
12
0
3
6
9
12
I
F
(A)
I
S
(A)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(V
GE
=15V,V
CE
=400V, di/dt=200A/
µ
s)
(V
GE
=15V,V
CE
=400V, di/dt=200A/
µ
s)
200
160
120
80
20
600
500
400
300
200
100
0
60
50
40
30
20
10
0
150
°
C
16
12
Q
rr
150
°
C
25
°
C
S
8
4
0
T
rr
25
°
C
150
°
C
25
°
C
150
°
C
I
rm
40
25
°
C
0
100 200 300 400 500 600 700 800 900
100 200 300 400 500 600 700 800 900
di/dt (A/
µ
S)
di/dt (A/
µ
S)
Fig 25: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Fig 26: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(V
GE
=15V,V
CE
=400V,I
F
=5A)
(V
GE
=15V,V
CE
=400V,I
F
=5A)
Rev.4.0: Jan 2014
Page 7 of 9
AOD5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=2.3
°
C/W
1
0.1
P
D
0.01
T
on
T
Single Pulse
0.0001
0.001
1E-06
1E-05
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=3
°
C/W
0.1
P
D
Single Pulse
0.01
0.001
T
on
T
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 28: Normalized Maximum Transient Thermal Impedance for Diode
Rev.4.0: Jan 2014
Page 8 of 9
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
S
Y
M
B
O
L
DIMENSION IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
2.184
0.000
0.889
0.635
0.762
4.953
0.450
0.450
5.969
5.210
0.662
6.350
4.318
1.678
NOM.
2.286
—–
MAX.
2.388
0.127
1.143
0.889
1.143
5.461
0.610
0.610
6.223
5.380
0.862
6.731
4.901
1.878
MIN.
NOM.
0.090
—–
MAX.
A
0.086
0.000
0.035
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.026
0.250
0.170
0.066
0.094
0.005
0.045
0.035
0.045
0.215
0.024
0.024
0.245
0.212
0.034
0.265
0.193
0.074
A1
A2
b
1.041
0.762
0.840
5.340
0.508
0.508
6.096
5.249
0.762
0.041
0.030
0.033
0.210
0.020
0.020
0.240
0.207
0.030
0.260
0.190
0.070
0.090 BSC
0.180 BSC
0.395
0.060
0.115REF.
0.020
0.040
—–
b1
b2
c
RECOMMENDED LAND PATTERN
6.25 MIN.
c1
D
D1
D2
E
6.80 MIN.
6.604
4.826
6.60
E1
E2
e
1.50 MIN.
1.778
2.286 BSC
4.572 BSC
10.033
1.520
3.00 MIN.
e1
H
9.398
1.270
10.414
2.032
0.370
0.050
0.410
0.080
2.286
UNIT: mm
4.572 BSC
L
L1
L2
L3
L4
2.921 REF.
0.508
0.408
0.889
0.635
0.608
1.270
1.016
0.016
0.035
0.025
0.024
0.050
0.040
NOTE
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS. MOLD FLASH SHOULD BE LESS THAN
6 MILS.
2. DIMENSION L IS MEASURED IN GAUGE PLANE
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
5. REFER TO JEDEC TO-252 (AA)
1.016
—–
AOS Semiconductor
Product Reliability Report
AOD5B60D
,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
1
This AOS product reliability report summarizes the qualification result for AOD5B60D.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOD5B60D passes
AOS quality and reliability requirements. The released product will be categorized by the process
family and be routine monitored for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
III.
IV.
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product
Description:
The Alpha IGBT
TM
line of products offers best-in-class performance in conduction and switching
losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate
spike under high dV/dt conditions and resistance to oscillations. The co-packaged soft diode is
optimized to minimize losses in motor control applications.
Details refer to the datasheet.
II. Die / Package Information:
AOD5B60D
Process
Standard sub-micron
600V Alpha IGBT
TM
with Diode
TO252
Bare Cu
Soft solder
Package Type
Lead Frame
Die Attach
Bond
Al wire
Mold Material
Moisture Level
Epoxy resin with silica filler
Up to Level 1
2
III. Reliability Stress Test Summary and Results
Total
Sample
Size
Number
of
Failures
Reference
Standard
Test Item*
Test Condition
Time Point
–
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
MSL
Precondition
3465 pcs
0
0
JESD22-A113
Temp = 150°C
,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
924 pcs
924 pcs
924 pcs
JESD22-A108
JESD22-A108
JESD22-A110
HTGB
HTRB
HAST
Temp = 150°C
,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
0
0
130°C ,
85%RH,
33.3 psi, Vds = 80% of
Vdsmax up to 42V
85°C ,
85%RH,
96 hours
Vds = 80% of Vdsmax
up to 100V
1000 hours
96 hours
693 pcs
924 pcs
924 pcs
0
0
0
JESD22-A101
JESD22-A102
JESD22-A104
H3TRB
121°C ,
29.7psi,
RH=100%
Autoclave
Temperature
Cycle
-65°C to
150°C ,
air to air,
250 / 500
cycles
Note:
The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion):
3.16
MTTF = 36173 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
Failure Rate
= Chi
2
x 10
9
/
[
2 (N) (H) (Af)
] =
3.16
MTTF =
10
9
/ FIT = 36173 years
Chi²
= Chi Squared Distribution, determined by the number of failures and confidence interval
N
= Total Number of units from burn-in tests
H
= Duration of burn-in testing
Af
= Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C
)
Acceleration Factor [
Af
] =
Exp
[Ea /
k
(1/Tj u
–
1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
259
87
Tj s
= Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u
=The use junction temperature in degree (Kelvin), K = C+273.16
k
=
Boltzm
ann’s
constant, 8.617164 X 10
-5
eV / K
3
