Alpha—Omega-Semicon-AOD7N65
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AOD7N65/AOI7N65
650V,7A N-Channel MOSFET
General Description
Product Summary
The AOD7N65 & AOI7N65 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
DS
750V@150
℃
7A
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
< 1.56
Ω
100% UIS Tested!
100% R
g
Tested!
TO252
DPAK
TO251A
IPAK
D
Top View
Bottom View
Top View
Bottom View
D
D
G
G
G
S
S
D
D
S
G
S
S
G
AOD7N65
AOI7N65
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
650
V
Gate-Source Voltage
V
GS
±30
7
V
A
T
C
=25°C
Continuous Drain
Current
B
I
D
T
C
=100°C
4.3
Pulsed Drain Current
C
I
DM
23
3.1
Avalanche Current
C
I
AR
A
Repetitive avalanche energy
C
E
AR
E
AS
dv/dt
144
mJ
Single pulsed avalanche energy
H
Peak diode recovery dv/dt
T
C
=25°C
288
mJ
V/ns
W
W/
o
C
5
178
P
D
Power Dissipation
B
Derate above 25
o
C
1.4
Junction and Storage Temperature Range
T
J
, T
STG
-50 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8″ from case for 5 seconds
T
L
300
°C
Thermal Characteristics
Parameter
Symbol
R
θ
JA
Typical
Maximum
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A,G
45
–
55
0.5
0.7
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
R
θ
CS
R
θ
JC
0.5
Rev.1.0: October 2014
Page 1 of 6
AOD7N65/AOI7N65
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
650
BV
DSS
Drain-Source Breakdown Voltage
750
V
BV
DSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
V/
o
C
I
D
=250µA, V
GS
=0V
0.67
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V, I
D
=250
µ
A
V
GS
=10V, I
D
=3.5A
V
DS
=40V, I
D
=3.5A
I
S
=1A,V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
10
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
n
Α
V
3.3
3.9
1.2
7
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1.56
Ω
S
V
SD
0.72
1
7
V
I
S
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
I
SM
23
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
780
60
4
982
86
7
1180
115
10
pF
pF
pF
Ω
V
GS
=0V, V
DS
=25V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
1.5
3.2
5
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
15
19.6
4.6
8.2
26
24
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=520V, I
D
=7A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=325V, I
D
=7A,
Turn-On Rise Time
43
R
G
=25
Ω
t
D(off)
t
f
Turn-Off DelayTime
53
Turn-Off Fall Time
32
t
rr
I
F
=7A,dI/dt=100A/
µ
s,V
DS
=100V
I
F
=7A,dI/dt=100A/
µ
s,V
DS
=100V
290
3.4
365
4.3
440
5.4
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
µ
C
A. The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25
°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C in
a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
H. L=60mH, I
AS
=3.1A, V
DD
=150V, R
G
=10
Ω
, Starting T
J
=25
°
C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2014
Page 2 of 6
AOD7N65/AOI7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
8
100
10
1
10V
V
DS
=40V
-55
°
C
6.5V
6V
125
°
C
6
4
5.5V
25
°
C
2
V
GS
=5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
2.4
2.1
1.8
1.5
1.2
0.9
0.6
3
2.5
2
V
GS
=10V
I
D
=3.5A
V
GS
=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
3
6
9
12
15
Temperature (°C)
I
D
(A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
125
°
C
25
°
C
0.9
0.8
-100
-50
0
50
100
150
200
0
0.2
0.4
0.6
0.8
1
T
J
(
o
C)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Figure 5: Break Down vs. Junction Temperature
Rev.1.0: October 2014
Page 3 of 6
AOD7N65/AOI7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
12
9
V
DS
=520V
I
D
=3.5A
C
iss
1000
100
10
C
oss
6
C
rss
3
1
0
0.1
1
10
100
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000
800
600
400
200
0
100
10
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1
1ms
DC
10ms
0.1
0.01
T
J(Max)
=150
°
C
T
C
=25
°
C
0.0001
0.001
0.01
0.1
1
10
1
10
100
1000
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area
(Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=0.7
°
C/W
R
0.1
0.01
P
D
Single Pulse
T
on
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2014
Page 4 of 6
AOD7N65/AOI7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
160
120
80
8
6
4
2
0
40
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 12: Power De-rating (Note B)
T
CASE
(°C)
Figure 13: Current De-rating (Note B)
400
T
J(Max)
=150
°
C
T
A
=25
°
C
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=55
°
C/W
0.1
P
D
0.01
T
on
Single Pulse
0.001
T
0.001
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0: October 2014
Page 5 of 6
AOD7N65/AOI7N65
Gate Char
g
e
T
e
s
t
C
ircuit
&
W
av
e
f
orm
Vgs
Qg
10V
+
V
D
C
+
Qgs
Q
g
d
Vds
VDC
–
–
DUT
Vgs
Vds
Ig
Cha
r
ge
Re
s
i
sti
v
e
S
witching Test Circuit &
W
avef
o
rms
RL
Vds
90%
10%
+
D
U
T
Vdd
Vgs
V
D
C
Rg
–
Vgs
Vgs
t
d(
o
n
)
t
r
t
d(
o
f
f)
t
f
t
o
n
t
o
f
f
Unclamped Inductive Switching (UIS) Test Circuit & Wa
v
e
f
o
rms
L
2
E
A
R
=
1
/
2 LI
AR
BV
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recover
y
T
e
s
t
C
ircuit
&
W
ave
f
orms
Q
r
r
=
–
I
dt
Vds +
V
d
s –
Ig
DUT
Vgs
I
s
d
t
r
r
L
I
F
Isd
dI/dt
+
I
RM
Vdd
Vgs
V
D
C
Vdd
–
Vds
Rev.1.0: October 2014
Page 6 of 6
