Alpha—Omega-Semicon-AON2392
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AON2392
100V N-Channel AlphaSGT
TM
General Description
Product Summary
• Trench Power AlphaSGT
TM
technology
• Low R
DS(ON)
• Logic driven
• RoHS and Halogen-Free Compliant
V
DS
100V
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
8A
< 32mΩ
< 39mΩ
R
DS(ON)
(at V
GS
=4.5V)
Applications
• Home Automation and IoT
• VOIP applications
DFN 2x2C
D
Top View
Bottom View
D
S
G
G
Pin 1
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
V
V
V
GS
±20
T
A
=25°C
T
A
=70°C
8
Continuous Drain
Current
I
D
A
6
32
Pulsed Drain Current
C
I
DM
P
D
T
A
=25°C
T
A
=70°C
4.1
W
Power Dissipation
B
2.6
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
25
Max
30
Units
°C/W
°C/W
Maximum Junction-to-Ambient
A
t ≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A D
Steady-State
45
55
Rev.1.0: January 2016
Page 1 of 5
AON2392
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
100
V
V
DS
=100V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=55°C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.4
32
nA
V
V
GS(th)
V
DS
=V
GS,
I
D
=250
µ
A
1.4
1.85
26
V
GS
=10V, I
D
=8A
mΩ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
46
57
V
GS
=4.5V, I
D
=6A
V
DS
=5V, I
D
=8A
I
S
=1A, V
GS
=0V
31
39
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
25
0.74
1
5
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
840
64
4
pF
pF
pF
Ω
V
GS
=0V, V
DS
=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
1.4
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Total Gate Charge
12.8
6.1
2.1
1.8
11
7
25
12
nC
nC
nC
nC
nC
ns
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=8A
V
GS
=0V, V
DS
=50V
Gate Source Charge
Gate Drain Charge
Q
gd
Q
oss
t
D(on)
t
r
Output Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=50V, R
L
=5.85
Ω
,
GEN
8
ns
t
D(off)
t
f
Turn-Off DelayTime
24
3
ns
Turn-Off Fall Time
ns
t
rr
I
F
=8A, di/dt=500A/
µ
s
I
F
=8A, di/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
20
70
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2016
Page 2 of 5
AON2392
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
35
30
25
20
15
10
5
10V
4V
V
DS
=5V
30
25
20
15
10
5
3.5V
4.5V
6V
125
°
C
3V
25
°
C
V
GS
=2.5V
4
0
0
1
2
3
4
5
0
1
2
3
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
50
40
30
20
10
2.2
2
V
GS
=10V
I
D
=8A
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=10V
V
GS
=4.5V
I
D
=6A
0.8
0
25
50
75
100
125
150
175
0
3
6
9
12
15
I
D
(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
80
60
40
20
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=8A
125
°
C
125
°
C
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics
(Note E)
Rev.1.0: January 2016
Page 3 of 5
AON2392
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
V
DS
=50V
I
D
=8A
C
iss
8
800
600
400
200
0
6
4
2
C
rss
C
oss
0
0
5
10
15
20
0
20
40
60
80
100
Q
g
(nC)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
1000
100
10
T
J(Max)
=150
°
C
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1
T
J(Max)
=150
°
C
T
A
=25
°
C
DC
0.0
1
0.01
0.1
1
10
100
1000
0.0001 0.001
0.01
0.1
1
10
100
1000
V
DS
(Volts)
Pulse Width (s)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=55
°
C/W
0.1
P
DM
0.01
0.001
Single Pulse
0.001
T
on
T
1E-05
0.0001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2016
Page 4 of 5
AON2392
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
BV
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
Isd
t
rr
L
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.0: January 2016
Page 5 of 5
