Alpha—Omega-Semicon-AON3818
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AON3818
24V Dual N-Channel αMOS
™
General Description
Product Summary
V
DS
• Trench Power αMOS
™
LV technology
• Low R
DS(ON)
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
24V
8A
I
D
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=4.0V)
R
DS(ON)
(at V
GS
=3.7V)
R
DS(ON)
(at V
GS
=3.1V)
R
DS(ON)
(at V
GS
=2.5V)
< 13.5mΩ
< 14mΩ
< 15mΩ
< 17mΩ
< 21mΩ
Typical ESD protection
HBM Class 2
Applications
• Battery protection switch
• Mobile device battery charging and discharging
DFN 3×3
D2
D1
Top View
Bottom View
Top View
D1/D2
D1/D2
S2
G2
S1
G1
1
2
3
4
8
G1
G2
7
6
5
D1/D2
D1/D2
S2
Pin 1
S1
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AON3818
DFN 3×3
3000
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
24
V
V
V
GS
±12
T
A
=25°C
T
A
=70°C
8
Continuous Drain
Current
G
Pulsed Drain Current
C
I
D
A
6
32
I
DM
P
D
T
A
=25°C
T
A
=70°C
2.7
W
Power Dissipation
B
1.7
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
t ≤
10s
Maximum Junction-to-Ambient
A D
Steady-State
Maximum Junction-to-Lead
Steady-State
Symbol
Typ
Max
45
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
35
60
15
R
q
JA
75
R
q
JL
20
Rev.2.0: July 2019
Page 1 of 5
AON3818
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250μA, VGS=0V
BV
DSS
Drain-Source Breakdown Voltage
24
V
V
DS
=24V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
μA
T
J
=55°C
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS,
I
D
=250
m
A
V
GS
=4.5V, I
D
=8A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±10
1.2
13.5
19
μA
V
GS(th)
0.4
7.5
0.8
10.8
15
V
T
J
=125°C 10.5
V
GS
=4.0V, I
D
=6A
V
GS
=3.7V, I
D
=6A
V
GS
=3.1V, I
D
=4A
V
GS
=2.5V, I
D
=4A
V
DS
=5V, I
D
=8A
I
S
=1A,V
GS
=0V
7.8
8
11.2
11.5
12.5
14.8
42
14
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
15
8
17
8.6
21
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
S
V
A
0.66
1
4
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
840
210
205
2
pF
pF
pF
kΩ
V
GS
=0V, V
DS
=12V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.5
1.5
4.5
0.3
0.8
1.7
5.2
15
nC
nC
nC
μs
μs
μs
μs
V
GS
=4.5V, V
DS
=12V, I
D
=8A
Q
gs
Q
gd
t
D(on)
t
r
V
GS
=4.5V, V
DS
=12V, R
L
=1.5
W
,
R
GEN
=3
W
t
D(off)
t
f
A. The value of R
q
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25
°
C.
D. The R
q
JA
is the sum of the thermal impedance from junction to lead R
q
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
m
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: July 2019
Page 2 of 5
AON3818
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
30
25
20
15
10
5
2.5V
3.1V
V
DS
=5V
25
3.7V
2V
4V
20
15
10
125
°
C
5
25
°
C
V
GS
=1.5V
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
18
16
14
12
10
8
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=8A
V
GS
=2.5V
V
GS
=4V
I
D
=6A
V
GS
=2.5V
I
D
=4A
V
GS
=3.1V
V
GS
=3.7V
V
GS
=3.1V
I
D
=4A
V
GS
=3.7V
I
D
=6A
V
GS
=4.5V
V
GS
=4V
0.8
0
25
50
75
100
125
150
175
0
4
8
12
16
Temperature (°C)
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
35
30
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=8A
125
°
C
125
°
C
25
°
C
25
°
C
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev.2.0: July 2019
Page 3 of 5
AON3818
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1200
V
DS
=12V
I
D
=8A
1000
800
600
400
200
0
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
24
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
1000
100
10
T
J(Max)
=150
°
C
T
A
=25
°
C
10
m
s
R
DS(ON)
limited
100
m
s
1ms
10ms
T
J(Max)
=150
°
C
T
A
=25
°
C
0.1
DC
1
0.0
1E-05 0.0001 0.001
0.01 0.1
1
10
100
0.01
0.1
1
10
100
V
DS
(Volts)
V
GS
> or equal to 2.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
q
JA
.R
q
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
q
JA
=75
°
C/W
0.1
P
D
0.01
0.001
Single Pulse
0.01
T
on
T
1E-05
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: July 2019
Page 4 of 5
AON3818
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.2.0: July 2019
Page 5 of 5
