Alpha—Omega-Semicon-AON6250
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AON6250
150V N-Channel
MOSFET
General Description
Product Summary
V
DS
The AON6250 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
150V
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
52A
< 16.5m
Ω
< 19m
Ω
100% UIS Tested
100% R
g
Tested
D
DFN5X6
Top View
Top View
Bottom View
1
8
7
6
5
2
3
4
G
S
PIN1
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
150
±20
52
V
V
V
GS
T
C
=25
°
C
Continuous Drain
Current
Pulsed Drain Current
C
I
D
T
C
=100
°
C
32
A
A
I
DM
112
13.5
10.5
33
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.3mH
C
I
DSM
I
AS
A
E
AS
163
mJ
T
C
=25
°
C
Power Dissipation
B
T
C
=100
°
C
104
P
D
W
41.5
7.4
T
A
=25
°
C
P
DSM
W
°C
Power Dissipation
A
4.7
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
55
R
θ
JC
1.2
Rev.2.0: December 2013
Page 1 of 7
AON6250
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
150
V
V
DS
=150V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3.4
nA
V
V
GS(th)
I
D(ON)
2.4
2.85
112
A
13.5
27.4
14.8
58
16.5
33.5
19
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=6V, I
D
=20A
m
Ω
S
V
DS
=5V, I
D
=20A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=1A,V
GS
=0V
0.69
1
V
Maximum Body-Diode Continuous Current
52
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
2388
213
9.5
pF
pF
pF
Ω
V
GS
=0V, V
DS
=75V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=75V, I
D
=20A
0.4
0.95
1.5
43
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
30.5
10.5
4.5
11
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=75V, R
L
=3.75
Ω
,
R
GEN
=3
Ω
3
t
D(off)
t
f
23
4.5
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
68
ns
Q
rr
nC
560
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t
≤
10s and the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: December 2013
Page 2 of 7
AON6250
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
5.5V
V
DS
=5V
8V
5V
6V
4.5V
125
°
C
V
GS
=4V
25
°
C
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
25
20
15
10
5
2.6
2.4
2.2
2
V
GS
=10V
I
D
=20A
V
GS
=6V
1.8
1.6
1.4
1.2
1
V
GS
=10V
V
GS
=6V
I
D
=20A
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
I
D
(A)
20
25
30
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
40
35
30
25
20
15
10
5
1.0E+02
I
D
=20A
1.0E+01
125
°
C
1.0E+00
1.0E
–
0
1
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
25
°
C
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: December 2013
Page 3 of 7
AON6250
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
V
DS
=75V
I
D
=20A
3500
3000
2500
2000
1500
1000
500
8
C
iss
6
4
C
oss
2
C
rss
0
0
0
5
10
15
Q
g
(nC)
20
25
30
35
0
30
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
90
120
150
Figure 7: Gate-Charge Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
DC
10ms
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
VGS> or equal to 6V
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=1.2
°
C/W
P
D
0.1
T
on
T
Single Pulse
0.0001
0.01
1E-05
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: December 2013
Page 4 of 7
AON6250
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
150
120
T
A
=25
°
C
T
A
=100
°
C
100
90
T
A
=150
°
C
60
10
1
T
A
=125
°
C
30
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, t
A
(
µ
s)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE
(
°
C
)
Figure 13: Power De-rating (Note F)
1.3
1.2
1.1
1
60
50
40
30
20
10
0
0.9
0.8
0.7
0
25
50
75
T
CASE
(
°
C
)
100
125
150
-100
-50
0
50
T
J
(°C)
100
150
200
Figure 14: Current De-rating (Note F)
Figure 15:Break Down vs. Junction Temparature
10000
1000
100
10
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note H)
Rev.2.0: December 2013
Page 5 of 7
AON6250
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
R
θ
JA
=55
°
C/W
P
D
0.01
0.001
Single Pulse
0.1
T
on
T
0.0001
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: December 2013
Page 6 of 7
AON6250
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.2.0: December 2013
Page 7 of 7
