Alpha—Omega-Semicon-AON6312
| Part # | Alpha—Omega-Semicon-AON6312 |
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AON6312
30V N-Channel MOSFET
General Description
Product Summary
V
DS
• Trench Power MOSFET technology
• Low R
DS(ON)
30V
I
D
(at V
GS
=10V)
130A
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
R
DS(ON)
(at V
GS
=10V)
< 1.85mΩ
< 2.5mΩ
R
DS(ON)
(at V
GS
=4.5V)
100% UIS Tested
100% Rg
Tested
Applications
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
• See Note I
DFN5X6
D
Top View
Top View
Bottom View
1
8
7
6
2
3
4
5
G
PIN1
S
PIN1
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AON6312
DFN 5×6
3000
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
130
83
V
V
V
GS
T
C
=25°C
Continuous Drain
Current
Pulsed Drain Current
C
I
D
T
C
=100°C
A
I
DM
260
46
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
I
DSM
A
37
Avalanche Current
C
Avalanche energy
V
DS
Spike
I
AS
80
A
mJ
V
C
L=0.01mH
10µs
E
AS
32
V
SPIKE
36
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
50
P
D
W
Power Dissipation
B
Power Dissipation
A
20
6.2
P
DSM
W
4
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t ≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Steady-State
Steady-State
40
50
R
θ
JC
1.9
2.5
Rev.2.0: September 2017
Page 1 of 6
AON6312
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
STATIC PARAMETERS
Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
V
DS
=30V, V
GS
=0V
30
V
1
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=55°C
5
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.2
nA
V
V
GS(th)
V
DS
=V
GS,
I
D
=250
µ
A
1.3
1.75
1.5
V
GS
=10V, I
D
=20A
1.85
2.45
2.5
mΩ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
2.0
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A, V
GS
=0V
2.0
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
125
0.68
1
V
Maximum Body-Diode Continuous Current
60
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
3100
875
105
2.3
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
1.1
3.5
SWITCHING PARAMETERS
Q
Q
g
(10V)
Total Gate Charge
43
20
8.5
6
65
30
nC
nC
nC
nC
ns
g
(4.5V)
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
11.5
5
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
ns
R
GEN
=3
Ω
t
D(off)
t
f
Turn-Off DelayTime
40
8
ns
Turn-Off Fall Time
ns
t
rr
I
F
=20A, di/dt=500A/
µ
s
I
F
=20A, di/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17
36
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The Power
dissipation P
DSM
is based on R
θ
JA
t≤ 10s and the maximum allowed junction temperature of 150
°
C. The value in any given application depends on
the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
I. For
application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: September 2017
Page 2 of 6
AON6312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
80
60
40
20
0
V
DS
=5V
4.5V
3.5V
80
60
10V
125
°
C
25
°
C
40
20
0
3V
V
GS
=2.5V
4
1
2
3
4
5
0
1
2
3
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
4
1.6
1.4
1.2
1
V
GS
=10V
I
D
=20A
3
2
1
0
V
GS
=4.5V
V
GS
=4.5V
I
D
=20A
V
GS
=10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
I
D
(A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
4
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=20A
3
2
1
0
125
°
C
125
°
C
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
V
GS
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: September 2017
Page 3 of 6
AON6312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
4500
V
DS
=15V
I
D
=20A
4000
3500
3000
2500
2000
1500
1000
500
C
iss
6
4
C
oss
2
C
rss
0
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
(Volts)
Figure 8: Capacitance Characteristics
500
1000.0
T
J(Max)
=150
°
C
T
C
=25
°
C
400
300
200
100
0
100.0
R
DS(ON)
limited
10
µ
s
10.0
1.0
100
µ
s
1ms
10ms
DC
0.1
T
J(Max)
=150
°
C
T
C
=25
°
C
0.0
0.01
1E-05 0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=2.5
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
P
DM
0.1
0.01
Single Pulse
T
on
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: September 2017
Page 4 of 6
AON6312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
150
120
90
60
30
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C)
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=50
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
P
DM
0.01
0.001
Single Pulse
0.01
T
on
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: September 2017
Page 5 of 6
AON6312
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.2.0: September 2017
Page 6 of 6
