Alpha—Omega-Semicon-AON6360
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AON6360
30V N-Channel AlphaMOS
General Description
Product Summary
V
DS
• Trench Power AlphaMOS (enhanced αMOS LV) technology
• Low RDS
(ON)
30V
85A
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
< 3mΩ
< 5mΩ
Applications
100% UIS Tested
100% Rg
Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
DFN5X6
D
Top View
Top View
Bottom View
1
8
2
3
7
6
5
4
G
PIN1
PIN1
S
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AON6360
DFN 5×6
3000
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
85
V
V
V
GS
T
C
=25°C
Continuous Drain
Current
G
Pulsed Drain Current
C
I
D
T
C
=100°C
59
A
I
DM
180
36
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
I
DSM
A
29
Avalanche Current
C
Avalanche energy
V
DS
Spike
I
AS
40
A
mJ
V
C
L=0.05mH
E
AS
40
10µs
V
SPIKE
36
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
42
P
D
W
Power Dissipation
B
Power Dissipation
A
17
6.2
4
P
DSM
W
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤ 10s
R
θ
JA
Steady-State
Steady-State
40
R
θ
JC
2.4
Rev. 1.0: September 2014
Page 1 of 6
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
V
DS
=30V, V
GS
=0V
30
V
1
5
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250
µ
A
V
GS
=10V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.2
3
nA
V
V
GS(th)
1.4
1.8
2.5
3.7
4
mΩ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
4.5
5
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
100
0.7
1
V
Maximum Body-Diode Continuous Current
50
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1590
660
80
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.8
1.7
2.6
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
24
11.5
4
nC
nC
nC
nC
nC
nC
ns
V
GS
=10V, V
DS
=15V, I
D
=20A
Q
gs
Q
gd
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
5.8
4
Gate Source Charge
V
GS
=4.5V, V
DS
=15V, I
D
=20A
Gate Drain Charge
5.8
8
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3
Ω
4
ns
t
D(off)
t
f
Turn-Off DelayTime
24
5
ns
Turn-Off Fall Time
ns
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14.5
31
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The Power
dissipation P
DSM
is based on R
θ
JA
t≤ 10s and the maximum allowed junction temperature of 150
°
C. The value in any given application depends on
the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev. 1.0: September 2014
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
100
80
60
40
20
0
V
DS
=5V
4.5V
4V
80
60
40
20
0
3.5V
125
°
C
25
°
C
V
GS
=3V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
6
1.8
1.6
1.4
1.2
1
5
4
3
2
1
0
V
GS
=10V
I
D
=20A
V
GS
=4.5V
V
GS
=4.5V
I
D
=20A
V
GS
=10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
I
D
(A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
8
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
I
D
=20A
125
°
C
6
125
°
C
25
°
C
4
2
25
°
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev. 1.0: September 2014
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
V
DS
=15V
I
D
=20A
8
2000
1500
1000
500
0
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
500
400
300
200
100
0
T
J(Max)
=150
°
C
T
C
=25
°
C
R
DS(ON)
limited
10
µ
s
100
µ
s
DC
1ms
10ms
0.1
T
J(Max)
=150
°
C
T
C
=25
°
C
0.0
0.01
1E-05 0.0001 0.001
0.01
0.1
1
10
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=3
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
Single Pulse
P
D
T
on
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev. 1.0: September 2014
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
100
80
60
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C)
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=50
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
P
D
0.01
0.001
Single Pulse
0.01
T
on
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev. 1.0: September 2014
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
BV
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev. 1.0: September 2014
Page 6 of 6
