Alpha—Omega-Semicon-AON6578
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AON6578
30V N-Channel
AlphaMOS
General Description
Product Summary
V
DS
30V
• Latest Trench Power AlphaMOS (
α
MOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
70A
< 4.4m
Ω
< 7.8m
Ω
Application
• DC/DC Converters in Computing, Servers, and POL
100% UIS Tested
100% R
g
Tested
• Isolated DC/DC Converters in Telecom and Industrial
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
3
7
6
4
5
G
S
PIN1
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±20
70
V
A
T
C
=25
°
C
Continuous Drain
Current
I
D
T
C
=100
°
C
45
Pulsed Drain Current
C
I
DM
180
28
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.05mH
C
I
DSM
A
23
I
AS
34
A
mJ
V
E
AS
29
V
DS
Spike
100ns
V
SPIKE
36
T
C
=25
°
C
T
C
=100
°
C
T
A
=25
°
C
T
A
=70
°
C
35
P
D
W
Power Dissipation
B
Power Dissipation
A
14
5.6
P
DSM
W
°C
3.6
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
18
Max
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
22
55
R
θ
JA
Steady-State
Steady-State
40
R
θ
JC
2.75
3.5
Rev.1.0: August 2013
Page 1 of 6
AON6578
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
V
DS
=30V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250
µ
A
V
GS
=10V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.4
4.4
6
nA
V
V
GS(th)
1.6
2
3.6
5
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
6.2
68
0.7
7.8
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
40
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1340
570
90
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.8
1.6
2.4
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
19.5
9
30
15
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.2
4
7
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3
Ω
7
ns
t
D(off)
t
f
21.5
5.5
ns
ns
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
ns
Q
rr
nC
20.5
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t
≤
10s and the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single
pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
35
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2013
Page 2 of 6
AON6578
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
40
30
20
10
0
4V
6V
V
DS
=5V
3.5V
10V
125
°
C
25
°
C
V
GS
=3V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
(Volts)
V
GS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
8
1.6
V
GS
=10V
I
D
=20A
1.4
1.2
1
V
GS
=4.5V
6
4
V
GS
=4.5V
I
D
=20A
V
GS
=10V
2
0
0.8
0
5
10
15
I
D
(A)
20
25
30
0
25
50
75
100
125
150
175
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Juncti
o
n
Temperature
9
1.0E+02
I
D
=20A
7.5
6
1.0E+01
1.0E+00
125
°
C
125
°
C
1.0E-01
4.5
3
1.0E-02
25
°
C
1.0E-03
1.0E-04
1.0E-05
25
°
C
1.5
0
2
4
6
8
10
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2013
Page 3 of 6
AON6578
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
V
DS
=15V
I
D
=20A
8
1600
1200
800
400
0
C
iss
6
C
oss
4
2
C
rss
0
0
5
10
Q
g
(nC)
15
20
25
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
R
DS(ON)
limited
10
µ
s
100
µ
s
1ms
10ms
DC
0.1
40
T
J(Max)
=150
°
C
T
C
=25
°
C
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=3.5
°
C/W
P
D
0.1
Single Pulse
T
on
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2013
Page 4 of 6
AON6578
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
50
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
T
CASE
(
°
C)
Figure 13: Current De-rating (Note F)
75
100
125
150
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=55
°
C/W
0.1
P
D
Single Pulse
0.01
T
on
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: August 2013
Page 5 of 6
AON6578
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.0: August 2013
Page 6 of 6
