Alpha—Omega-Semicon-AON6884
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AON6884
40V Dual N-Channel MOSFET
General Description
Product Summary
V
DS
40V
The AON6884 uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This is an
all purpose device that is suitable for use in a wide range
of power conversion applications.
I
D
(at V
GS
=10V)
34A
R
DS(ON)
(at V
GS
=10V)
< 11.3m
Ω
< 13.8m
Ω
R
DS(ON)
(at V
GS
= 4.5V)
100% UIS Tested
100% R
g
Tested
D1
D2
Top View
1
2
3
4
8
S1
D1
7
D1
G1
S2
6
D2
5
G2
D2
G1
G2
S1
S2
DFN5X6 EP2
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
40
±20
34
V
V
V
GS
T
C
=25
°
C
Continuous Drain
Current
I
D
T
C
=100
°
C
21
A
Pulsed Drain Current
C
I
DM
120
T
A
=25
°
C
T
A
=70
°
C
9
Continuous Drain
Current
I
DSM
A
7
Avalanche Current
C
I
AS
, I
AR
35
A
Avalanche energy L=0.1mH
C
E
AS
, E
AR
61
mJ
T
C
=25
°
C
Power Dissipation
B
T
C
=100
°
C
21
P
D
W
8
T
A
=25
°
C
1.6
1
P
DSM
W
°C
Power Dissipation
A
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
35
65
5
Max
45
80
6
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Steady-State
Steady-State
R
θ
JC
Rev 1: November 2010
Page 1 of 6
AON6884
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
40
V
V
DS
=40V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
5
V
DS
=0V, V
GS
= ±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.7
nA
V
V
GS(th)
I
D(ON)
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=10A
1.55
120
2.1
A
9.4
14
11.3
17
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=10A
11
13.8
m
Ω
S
V
DS
=5V, I
D
=10A
I
S
=1A,V
GS
=0V
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
50
0.7
1
V
Maximum Body-Diode Continuous Current
25
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1200 1500 1950
pF
pF
pF
Ω
V
GS
=0V, V
DS
=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
150
80
215
135
3.5
280
190
5.3
V
GS
=0V, V
DS
=0V, f=1MHz
1.7
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
22
10
27.2
13.6
4.5
33
16
5.4
9
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=20V, I
D
=10A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.6
3.8
6.4
6.4
V
GS
=10V, V
DS
=20V, R
L
=2
Ω
,
R
GEN
=3
Ω
17.2
29.6
16.8
ns
t
D(off)
t
f
ns
ns
t
rr
I
F
=10A, dI/dt=500A/
µ
s
I
F
=10A, dI/dt=500A/
µ
s
9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
35
17
45
ns
Q
rr
25
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
. The
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150
°
C
. The value in any given application depends
on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C
, using junction-to-case thermal resistance,
and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C
. Ratings are based on low frequency and duty
cycles to keep
initial T
J
=25
°
C
.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150
°
C
. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
Page 2 of 6
AON6884
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
V
DS
=5V
4.5V
4V
25
°
C
125
°
C
3.5V
V
GS
=3V
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
20
16
12
8
1.8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=10A
V
GS
=4.5V
V
GS
=4.5V
V
GS
=10V
I
D
=10A
4
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
20
15
10
5
1.0E+02
1.0E+01
I
D
=10A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
125
°
C
25
°
C
25
°
C
0.0
0.2
0.4
0.6
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
Page 3 of 6
AON6884
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
V
DS
=20V
I
D
=10A
8
2000
1500
1000
500
0
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
g
(nC)
20
25
30
0
10
20
DS
(Volts)
30
40
Q
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
DC
1ms
10ms
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=6
°
C
/W
T
R
0.1
P
D
0.01
0.001
T
on
Single Pulse
T
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: November 2010
Page 4 of 6
AON6884
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
25
T
A
=25
°
C
20
T
A
=100
°
C
15
T
A
=150
°
C
T
A
=125
°
C
10
5
10
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, t
A
(
µ
s)
T
CASE
(
°
C
)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
40
35
30
25
20
15
10
5
T
A
=25
°
C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE
(
°
C
)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=80
°
C
/W
R
0.1
P
D
0.01
T
on
Single Pulse
0.01
T
0.001
0.0001
0.001
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: November 2010
Page 5 of 6
AON6884
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev 1: November 2010
Page 6 of 6
AOS Semiconductor
Product Reliability Report
AON6884
,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
1
This AOS product reliability report summarizes the qualification result for AON6884. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AON6884 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
routine monitored for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
III.
IV.
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product
Description:
The AON6884 uses advanced trench technology to provide excellent R
DS(ON)
with low gate charge.
This is an all purpose device that is suitable for use in a wide range of power conversion
applications
Details refer to the datasheet.
II. Die / Package Information:
AON6884
Process
Standard sub-micron
40V Dual N-Channel MOSFET
DFN5x6 EP2
Bare Cu
Ag Epoxy
Package Type
Lead Frame
Die Attach
Bond
Au Wire
Mold Material
Moisture Level
Epoxy resin with silica filler
Up to Level 1
2
III. Reliability Stress Test Summary and Results
Total
Sample
Size
Number
of
Failures
Reference
Standard
Test Item
Test Condition
Time Point
Temp = 150°C
,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
JESD22-A108
HTGB
HTRB
Temp = 150°C
,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
924 pcs
0
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
MSL
Precondition
2772 pcs
924 pcs
0
0
JESD22-A113
JESD22-A110
–
130°C ,
85%RH,
33.3 psi,
Vds = 80% of Vdsmax
96 hours
96 hours
HAST
121°C ,
29.7psi,
RH=100%
924 pcs
924 pcs
0
0
JESD22-A102
JESD22-A104
Autoclave
Temperature
Cycle
-65°C to
150°C ,
air to air,
250 / 500
cycles
Note:
The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion):
3.27
MTTF = 34926 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
Failure Rate
= Chi
2
x 10
9
/
[
2 (N) (H) (Af)
] =
3.27
MTTF =
10
9
/ FIT = 34926 years
Chi²
= Chi Squared Distribution, determined by the number of failures and confidence interval
N
= Total Number of units from burn-in tests
H
= Duration of burn-in testing
Af
= Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C
)
Acceleration Factor [
Af
] =
Exp
[Ea /
k
(1/Tj u
–
1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
259
87
Tj s
= Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u
=The use junction temperature in degree (Kelvin), K = C+273.16
k
=
Boltzm
ann’s
constant, 8.617164 X 10
-5
eV / K
3
