Alpha—Omega-Semicon-AON7403
| Part # | Alpha—Omega-Semicon-AON7403 |
Download  | Alpha—Omega-Semicon-AON7403 |
AON7403
30V P-Channel
MOSFET
General Description
Product Summary
V
DS
-30V
The AON7403 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications.
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-5V)
-29A
< 18m
W
< 36m
W
100% UIS Tested
DFN 3x3_EP
D
Top View
Bottom View
Top View
1
2
3
4
8
7
6
5
D
D
D
S
S
S
G
D
G
Pin 1
S
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
-30
V
V
Gate-Source Voltage
V
GS
±2 5
-29
T
C
=25°C
Continuous Drain
Current
Pulsed Drain Current
C
I
D
T
C
=100°C
A
A
-18
I
DM
-80
T
A
=25°C
T
A
=70°C
-11
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
I
DSM
-8.5
24
I
AR
A
E
AR
29
mJ
T
C
=25°C
Power Dissipation
B
T
C
=100°C
25
P
D
W
10
T
A
=25°C
4.1
P
DSM
W
Power Dissipation
A
2.6
T
A
=70°C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
22
Max
30
60
5
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t ≤
10s
R
q
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Steady-State
Steady-State
47
R
q
JC
4.2
Rev.4.0: November. 2013
Page 1 of 5
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=-250
m
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-30
V
V
DS
=-30V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain Current
m
A
-5
T
J
=55°C
V
DS
=0V, V
GS
= ±25V
V
DS
=V
GS
I
D
=-250
m
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
-3
nA
V
V
GS(th)
I
D(ON)
-1.7
-80
-2.2
A
14
20
18
25
36
m
W
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-5V, I
D
=-5A
V
DS
=-5V, I
D
=-8A
I
S
=-1A,V
GS
=0V
26
m
W
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
20
-0.7
-1
V
Maximum Body-Diode Continuous Current
-22
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1130 1400
pF
pF
pF
W
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
240
155
V
GS
=0V, V
DS
=0V, f=1MHz
5.8
8
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
18
5.5
3.3
8.7
8.5
18
7
24
nC
nC
nC
ns
ns
ns
ns
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
W
,
R
GEN
=3
W
t
D(off)
t
f
t
rr
I
F
=-8A, dI/dt=500A/
m
s
I
F
=-8A, dI/dt=500A/
m
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12
26
16
ns
Q
rr
nC
A. The value of R
q
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
q
JA
t
≤
10s value and the maximum allowed junction temperature of 150
°
C. The value in any given
application depends on the user’s specific board design, and the maximum temperature of 150
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25
°
C.
D. The R
q
JA
is the sum of the thermal impedence from junction to case R
q
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
m
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: November. 2013
Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
-10V
V
DS
=-5V
-8V
-6V
-4.5V
125
°
C
25
°
C
V
GS
=-4V
1
2
3
4
5
6
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
40
1.6
1.4
1.2
1
V
GS
=-10V
I
D
=-8A
35
30
25
20
15
10
V
GS
=-5V
V
GS
=-10V
V
GS
=-5V
I
D
=-5A
0.8
0
5
10
-I
D
(A)
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
1.0E+01
I
D
=-8A
40
30
20
10
1.0E+00
125
°
1.0E-01
1.0E-02
1.0E-03
125
°
25
°
25
°
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-V
SD
(Volts)
-V
GS
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.4.0: November. 2013
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
10
V
DS
=-15V
I
D
=-8A
1400
1200
1000
800
600
400
200
0
C
iss
8
6
4
C
oss
2
C
rss
0
0
5
10
15
20
0
5
10
15
20
25
30
Q
g
(nC)
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
10000
1000
100
10
T
A
=25
°
100.0
10.0
1.0
10
m
s
R
DS(ON)
100
m
s
1ms
10ms
DC
T
J(Max)
=150
°
C
T
A
=25
°
C
100ms
10s
0.1
0.0
0.01
1
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
q
JA
.R
q
JA
R
q
JA
=60
°
C/W
1
0.1
P
D
0.01
0.001
T
on
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.4.0: November. 2013
Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
t
d(off)
t
d(on)
t
r
f
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
E
AR
= 1/2 LI
A
2
R
L
Vds
Id
Vgs
Vds
–
BV
DSS
Vgs
Vdd
VDC
+
Id
Rg
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Rev.4.0: November. 2013
Page 5 of 5
