Alpha—Omega-Semicon-AON7421
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AON7421
20V P-Channel
MOSFET
General Description
Product Summary
V
DS
-20V
The AON7421 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
-50A
< 4.6m
Ω
< 5.8m
Ω
< 9.0m
Ω
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-2.5V)
100% UIS Tested
100% R
g
Tested
DFN 3.3×3.3 EP
Top View
Bottom View
D
Top View
1
8
2
3
7
6
4
5
G
S
Pin 1
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
-20
V
V
Gate-Source Voltage
V
GS
±12
-50
T
C
=25
°
C
Continuous Drain
Current
G
Pulsed Drain Current
C
I
D
T
C
=100
°
C
-39
A
A
I
DM
-200
-30
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
C
I
DSM
-24.5
50
I
AS
A
E
AS
125
83
mJ
T
C
=25
°
C
P
D
W
Power Dissipation
B
T
C
=100
°
C
33
T
A
=25
°
C
6.2
P
DSM
W
°C
Power Dissipation
A
4
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
45
55
R
θ
JC
1.1
1.5
Rev.2.0: May 2013
Page 1 of 6
AON7421
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-20
V
V
DS
=-20V, V
GS
=0V
-1
µ
A
-5
I
DSS
Zero Gate Voltage Drain Current
T
J
=55
°
C
V
DS
=0V, V
GS
=±12V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1.2
nA
V
V
GS(th)
I
D(ON)
V
DS
=V
GS
, I
D
=-250
µ
A
-0.5
-0.8
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
-200
A
3.7
5
4.6
6.2
5.8
9
m
Ω
T
J
=125
°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-20A
4.5
6.3
90
m
Ω
m
Ω
S
V
GS
=-2.5V, I
D
=-20A
V
DS
=-5V, I
D
=-20A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
G
-0.58
-1
V
-50
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
4550
823
563
2.1
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
4.2
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
95
44
6.5
14
7
135
62
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=-10V, V
DS
=-10V, I
D
=-20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-10V, R
L
=0.5
Ω
,
R
GEN
=3
Ω
12
134
45
ns
t
D(off)
t
f
ns
ns
t
rr
I
F
=-20A, dI/dt=500A/
µ
s
I
F
=-20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
75
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t
≤
10s value and the maximum allowed junction temperature of 150
°
C. The value in any given
application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2013
Page 2 of 6
AON7421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
-10V
-2.5V
V
DS
=-5V
-3V
-4.5V
-2V
125
°
C
25
°
C
V
GS
=-1.5V
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
10
8
1.6
1.4
1.2
1
V
GS
=-10V
I
D
=-20A
V
GS
=-2.5V
V
GS
=-4.5V
6
V
GS
=-4.5V
4
I
D
=-20A
V
GS
=-10V
2
V
GS
=-2.5V
I
D
=-20A
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
-I
D
(A)
Temperature (
°
C
)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
18
15
12
9
1.0E+02
1.0E+01
I
D
=-20A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
25
°
C
6
3
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
-V
SD
(Volts)
0.8
1.0
1.2
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev.2.0: May 2013
Page 3 of 6
AON7421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
V
DS
=-10V
I
D
=-20A
C
iss
5000
4000
3000
2000
1000
0
8
6
4
C
oss
2
C
rss
0
0
10 20 30 40 50 60 70 80 90
100
0
5
10
15
20
Q
g
(nC)
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
350
300
250
200
150
100
50
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
DC
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
0.0
0.01
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-V
DS
(Volts)
Pulse Width (s
)
VGS> or equal to 2.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Ca
(Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=1.5
°
C/W
0.1
0.01
P
D
Single Pulse
0.0001
T
on
T
0.00001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: May 2013
Page 4 of 6
AON7421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
T
A
=100
°
C
T
A
=25
°
C
80
60
40
20
0
100
10
1
T
A
=150
°
C
T
A
=125
°
C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, t
A
(
µ
s)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE
(
°
C
)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
70
60
50
40
30
20
10
0
T
A
=25
°
C
1
0
25
50
75
100
125
150
0.00001
0.001
0.1
10
1000
T
CASE
(
°
C
)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=55
°
C/W
0.1
0.01
P
D
Single Pulse
T
on
T
0.001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: May 2013
Page 5 of 6
AON7421
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
t
d(off)
t
d(on)
t
r
f
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
E
AR
= 1/2 LI
A
2
R
L
Vds
Id
Vgs
Vds
BV
DSS
Vgs
Vdd
+
VDC
Id
Rg
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Rev.2.0: May 2013
Page 6 of 6
