Alpha—Omega-Semicon-AON7534
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AON7534
30V N-Channel MOSFET
General Description
Product Summary
V
DS
30V
• Trench Power MOSFET technology
• Very Low R
DS(on)
at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30A
< 5m
Ω
< 8.5m
Ω
Application
• DC/DC Converters in Computing, Servers, and POL
100% UIS Tested
100% R
g
Tested
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3×3 EP
D
Top View
Top View
Bottom View
1
8
7
6
5
2
3
4
G
S
Pin 1
Orderable Part Number
Package Type
DFN 3×3 EP
Form
Tape & Reel
Minimum Order Quantity
AON7534
5000
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
V
DS
30
±20
30
V
V
V
GS
T
C
=25
°
C
Continuous Drain
Current
G
I
D
T
C
=100
°
C
23
A
Pulsed Drain Current
C
I
DM
120
T
A
=25
°
C
T
A
=70
°
C
20
Continuous Drain
Current
Avalanche Current
C
I
DSM
A
16
I
AS
32
A
mJ
V
Avalanche energy L=0.05mH
C
E
AS
26
V
DS
Spike
100ns
V
SPIKE
36
T
C
=25
°
C
T
C
=100
°
C
T
A
=25
°
C
T
A
=70
°
C
23
P
D
W
Power Dissipation
B
9
3
2
P
DSM
W
°C
Power Dissipation
A
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Steady-State
Steady-State
60
75
R
θ
JC
4.5
5.4
Rev.1.0: April 2016
Page 1 of 6
AON7534
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
V
DS
=30V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
，
I
D
=250
µ
A
V
GS
=10V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.2
5
nA
V
V
GS(th)
1.4
1.8
4.1
5.6
6.7
91
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
6.8
8.5
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
28
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1037
441
61
1500
2.3
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
0.7
1.5
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
15.5
6.8
3.0
3.6
5.5
3.3
18
22
10
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3
Ω
ns
t
D(off)
t
f
ns
4.3
ns
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.7
17.2
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t
≤
10s and
the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single
pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2016
Page 2 of 6
AON7534
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
V
DS
=5V
4.5V
7V
5V
4V
125
°
C
25
°
C
V
GS
=3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
8
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=10V
I
D
=20A
6
4
V
GS
=10V
V
GS
=4.5V
I
D
=20A
2
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
I
D
(A)
20
25
30
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
15
10
5
1.0E+02
1.0E+01
I
D
=20A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
25
°
C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev.1.0: April 2016
Page 3 of 6
AON7534
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
V
DS
=15V
I
D
=20A
1200
1000
800
600
400
200
0
8
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
20
0
5
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
100
µ
s
1ms
10ms
DC
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
40
0.0
0.01
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=5.4
°
C/W
P
D
0.1
Single Pulse
T
on
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: April 2016
Page 4 of 6
AON7534
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
0
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C
)
Figure 12: Power De-rating (Note F)
T
CASE
(
°
C
)
Figure 13: Current De-rating (Note F)
T
A
=25
°
C
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=75
°
C/W
0.1
P
D
0.01
Single Pulse
0.001
T
on
T
0.001
1E-05
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: April 2016
Page 5 of 6
AON7534
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.0: April 2016
Page 6 of 6
