Alpha—Omega-Semicon-AONS21321
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AONS21321
30V P-Channel MOSFET
General Description
Product Summary
V
DS
• Latest Advanced Trench Technology
• Low R
DS(ON)
• High Current Capability
-30V
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
-24A
< 16.5mΩ
< 29.5mΩ
• RoHS and Halogen-Free Compliant
R
DS(ON)
(at V
GS
=-4.5V)
Applications
100% UIS Tested
100% Rg
Tested
• Notebook AC-in Load Switch
• Battery Protection Charge/Discharge
DFN5X6
Top View
Bottom View
Top View
D
1
8
2
3
7
6
4
5
G
PIN1
PIN1
S
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AONS21321
DFN 5×6
3000
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
-30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±25
-24
T
C
=25°C
Continuous Drain
Current
G
Pulsed Drain Current
C
I
D
T
C
=100°C
A
-20
I
DM
-66
T
A
=25°C
T
A
=70°C
-14
Continuous Drain
Current
I
DSM
A
-11
Avalanche Current
C
I
AS
25
A
C
Avalanche energy
L=0.1mH
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
E
AS
31
mJ
24.5
9.8
P
D
W
Power Dissipation
B
Power Dissipation
A
5
P
DSM
W
3.2
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t ≤
10s
25
55
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Steady-State
Steady-State
45
R
θ
JC
4.1
5.1
Rev.1.0: November 2017
Page 1 of 6
AONS21321
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-30
V
V
DS
=-30V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=55°C
-5
V
DS
=0V, V
GS
=±25V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
-2.3
16.5
23.5
29.5
nA
V
V
GS(th)
V
DS
=V
GS,
I
D
=-250
µ
A
-1.3
-1.8
13.5
19.5
23
V
GS
=-10V, I
D
=-20A
mΩ
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-4.5V, I
D
=-10A
V
DS
=-5V, I
D
=-20A
I
S
=-1A, V
GS
=0V
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
30
-0.72
-1
V
Maximum Body-Diode Continuous Current
G
-24
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1180
185
155
5
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
10
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
21
11
6
34
18
nC
nC
nC
nC
ns
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-20A
Gate Source Charge
Gate Drain Charge
3
Turn-On DelayTime
10.5
8.5
30
11.5
13
23
V
GS
=-10V, V
DS
=-15V,
Turn-On Rise Time
ns
R
L
=0.75
Ω
, R
GEN
=3
Ω
t
D(off)
t
f
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
t
rr
I
F
=-20A, di/dt=500A/
µ
s
I
F
=-20A, di/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The Power
dissipation P
DSM
is based on R
θ
JA
t≤ 10s and the maximum allowed junction temperature of 150
°
C. The value in any given application depends on
the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2017
Page 2 of 6
AONS21321
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
45
30
15
0
-10V
V
DS
=-5V
-4.5V
45
-4V
30
125
°
C
-3.5V
15
25
°
C
V
GS
=-3V
0
0
1
2
3
4
5
6
0
1
2
3
4
5
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
40
30
20
10
0
1.6
1.4
1.2
1
V
GS
=-10V
I
D
=-20A
V
GS
=-4.5V
V
GS
=-4.5V
I
D
=-10A
V
GS
=-10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
-I
D
(A)
20
25
30
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
70
60
50
40
30
20
10
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=-20A
125
°
C
125
°
C
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: November 2017
Page 3 of 6
AONS21321
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
V
DS
=-15V
I
D
=-20A
8
1500
1000
500
0
C
iss
6
4
2
C
oss
C
rss
0
0
5
10
Q
g
(nC)
15
20
25
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
500
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
400
300
200
100
0
R
DS(ON)
limited
100
µ
s
DC
1ms
10ms
0.1
T
J(Max)
=150
°
C
T
C
=25
°
C
0.0
1E-05 0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
-V
DS
(Volts)
-V
GS
> or equal to -4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=5.1
°
C/W
R
Single Pulse
P
DM
0.1
0.01
T
on
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: November 2017
Page 4 of 6
AONS21321
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
24
18
12
6
24
18
12
6
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C)
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=55
°
C/W
R
0.1
P
DM
0.01
0.001
Single Pulse
0.01
T
on
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: November 2017
Page 5 of 6
AONS21321
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
t
d(off)
t
d(on)
t
r
f
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
E
AR
= 1/2 LI
A
2
R
L
Vds
Id
Vds
–
BV
DSS
Vgs
Vdd
Vgs
VDC
+
Id
Rg
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Rev.1.0: November 2017
Page 6 of 6
