Alpha—Omega-Semicon-AONS32304
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AONS32304
30V N-Channel MOSFET
General Description
Product Summary
V
DS
30V
• Trench Power MOSFET technology
• Low R
DS(ON)
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
140A
• High Current Capability
• RoHS and Halogen-Free Compliant
< 2.3mΩ
< 3.2mΩ
Applications
100% UIS Tested
100% Rg
Tested
• Load Switch
• Battery Protection
DFN5X6
D
Top View
Bottom View
Top View
1
8
D
S
S
S
G
2
3
7
6
D
D
4
5
D
G
PIN1
S
PIN1
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AONS32304
DFN 5X6
3000
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
140
88
V
V
V
GS
T
C
=25°C
Continuous Drain
Current
Pulsed Drain Current
C
I
D
T
C
=100°C
A
I
DM
285
40
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
Avalanche Current
C
I
DSM
A
32
I
AS
60
A
C
Avalanche energy
L=0.1mH
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
E
AS
180
78
mJ
P
D
W
Power Dissipation
B
Power Dissipation
A
31
6.2
4.0
P
DSM
W
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t ≤
10s
20
50
R
q
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Steady-State
Steady-State
40
R
q
JC
1.3
1.6
Page 1 of 6
Rev.1.1: July 2018
AONS32304
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
30
V
V
DS
=30V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
μA
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250
m
A
V
GS
=10V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.1
2.3
3.5
3.2
nA
V
V
GS(th)
1.1
1.6
1.8
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
2.8
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A, V
GS
=0V
2.4
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
100
0.65
1
V
Maximum Body-Diode Continuous Current
100
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
5970
580
340
3
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
1.5
4.5
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
89
40
14
13
9
130
60
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
W
,
R
GEN
=3
W
5
ns
t
D(off)
t
f
87
20.0
ns
ns
t
rr
I
F
=20A, di/dt=500A/
m
s
I
F
=20A, di/dt=500A/
m
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
25
ns
Q
rr
nC
A. The value of R
q
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The Power
dissipation P
DSM
is based on R
q
JA
t≤ 10s
and the maximum allowed junction temperature of 150
°
C. The value in any given application depends on
the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
q
JA
is the sum of the thermal impedance from junction to case R
q
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <30
0
m
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsi
n
k
, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.1: July 2018
Page 2 of 6
AONS32304
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
3V
V
DS
=5V
5V
10V
125
°
C
2.5V
25
°
C
V
GS
=2V
4
0
1
2
3
4
5
0
1
2
3
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
4
2
1.8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=20A
3
2
1
0
V
GS
=4.5V
V
GS
=10V
V
GS
=4.5V
I
D
=20A
0.8
0
50
100
150
200
0
5
10
15
20
25
30
Temperature (°C)
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
6
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=20A
5
4
3
2
1
0
125
°
C
125
°
C
25
°
C
25
°
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
V
GS
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.1: July 2018
Page 3 of 6
AONS32304
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100000
10000
1000
V
DS
=15V
I
D
=20A
C
iss
8
6
4
C
oss
2
C
rss
10
0
100
0
20
40
60
80
100
0
5
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
(Volts)
Figure 8: Capacitance Characteristics
500
400
300
200
100
0
1000.0
T
J(Max)
=150
°
C
T
C
=25
°
C
100.0
R
DS(ON)
limited
10
m
s
100
m
s
1ms
10.0
1.0
DC
10ms
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
0.0
0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
(Volts)
V
GS
> or equal to 4.5V
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junctio
n
–
to-
Case (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
q
JC
.R
q
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
q
JC
=1.6
°
C/W
P
DM
0.1
Single Pulse
T
on
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.1: July 2018
Page 4 of 6
AONS32304
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
200
150
100
50
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
T
CASE
(
°
C)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
q
JA
.R
q
JA
R
q
JA
=50
°
C/W
1
0.1
P
DM
0.01
0.001
Single Pulse
T
on
T
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.1: July 2018
Page 5 of 6
AONS32304
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.1: July 2018
Page 6 of 6
