Alpha—Omega-Semicon-AOSS32338C
| Part # | Alpha—Omega-Semicon-AOSS32338C |
Download  | Alpha—Omega-Semicon-AOSS32338C |
AOSS32338C
30V N-Channel MOSFET
General Description
Product Summary
V
DS
• Trench Power MOSFET technology
• Low R
DS(ON)
• Low Gate Charge
30V
4A
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
< 50mΩ
< 57mΩ
< 72mΩ
• RoHS and Halogen-Free Compliant
ESD protection
Applications
• Ideal for Load Switching
SOT23
D
Top View
Bottom View
D
D
G
G
S
S
S
G
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AOSS32338C
SOT23-3
3000
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±12
V
V
V
GS
T
A
=25°C
T
A
=70°C
4
Continuous Drain
Current
I
D
A
3.1
Pulsed Drain Current
C
I
DM
P
D
24
T
A
=25°C
T
A
=70°C
1.3
W
Power Dissipation
B
0.8
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t ≤
10s
R
q
JA
Maximum Junction-to-Ambient
A D
Steady-State
100
63
125
80
Maximum Junction-to-Lead
Steady-State
R
q
JL
Rev.1.0: January 2019
Page 1 of 5
AOSS32338C
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
30
V
V
DS
=30V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
μA
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS,
I
D
=250
m
A
V
GS
=10V, I
D
=4A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±10
1.5
50
73
57
72
μA
V
GS(th)
0.5
1
V
40
58
42
50
20
0.7
m
Ω
T
J
=125°C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=3.5A
V
DS
=5V, I
D
=4A
I
S
=1A, V
GS
=0V
mΩ
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
1
2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
340
30
25
8
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
4
12
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
8
4
16
8
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=4A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1
1.2
2.5
3
V
GS
=10V, V
DS
=15V, R
L
=3.75
W
,
R
GEN
=3
W
ns
t
D(off)
t
f
30
5
ns
ns
t
rr
I
F
=4A, di/dt=500A/
m
s
I
F
=4A, di/dt=500A/
m
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
5.5
4
ns
Q
rr
nC
A. The value of R
q
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25
°
C.
D. The R
q
JA
is the sum of the thermal impedance from junction to lead R
q
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <30
0
m
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1i
n
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2019
Page 2 of 5
AOSS32338C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
15
10
5
10V
2.5V
3.5V
4.5V
V
DS
=5V
15
10
5
2V
125
°
C
25
°
C
V
GS
=1.5V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
70
60
50
40
30
20
1.7
1.5
1.3
1.1
0.9
V
GS
=4.5V
I
D
=4A
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=4A
V
GS
=2.5V
I
D
=3.5A
V
GS
=10V
0
25
50
75
100
125
150
175
0
2
4
6
8
10
Temperature (°C)
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=4A
125
°
C
125
°
C
60
40
20
25
°
C
25
°
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
(Note E)
(Note E)
Rev.1.0: January 2019
Page 3 of 5
AOSS32338C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
500
V
DS
=15V
I
D
=4A
400
300
200
100
0
C
iss
6
4
2
C
oss
C
0
0
2
4
6
8
0
5
10
15
20
25
30
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
1000
100
10
T
J(Max)
=150
°
C
T
A
=25
°
C
10
m
s
R
DS(ON)
limited
100
m
s
1ms
10ms
T
J(Max)
=150
°
C
T
A
=25
°
C
DC
0.1
1
0.0
0.1
0.01
0.1
1
10
100
1E-05
0.001
0.1
Pulse Width (s)
10
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
V
GS
> or equal to 4.5V
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
q
JA
.R
q
JA
R
q
JA
=125
°
C/W
1
0.1
P
DM
0.01
0.001
Single Pulse
0.01
T
on
T
1E-05
0.0001
0.001
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2019
Page 4 of 5
AOSS32338C
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1.0: January 2019
Page 5 of 5
