Alpha—Omega-Semicon-AOT240L
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AOT240L/AOB240L/AOTF240L
40V N-Channel
MOSFET
General Description
Product Summary
V
DS
The AOT240L & AOB240L & AOTF240L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of R
DS(ON)
and Crss.
40V
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
105A/85A
< 2.9m
Ω
(< 2.6m
Ω )
< 3.7m
Ω
(< 3.5m
Ω )
100% UIS Tested
100% R
g
Tested
Top View
TO-263
D
2
PAK
D
TO-220
TO-220F
D
G
S
S
S
S
D
D
G
G
G
AOT240L
AOTF240L
AOB240L
Orderable Part Number
AOT240L
Package Type
TO-220
Form
Minimum Order Quantity
Tube
Tape & Reel
Tube
1000
800
1000
AOB240L
AOTF240L
TO-263
TO-220F
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
AOT240L/AOB240L
AOTF240L
Units
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
I
D
I
DM
I
DSM
±20
V
A
T
C
=25
°
C
105
82
85
60
Continuous Drain
Current
G
Pulsed Drain Current
C
T
C
=100
°
C
400
20
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
A
16
Avalanche Current
C
I
AS
68
A
Avalanche energy L=0.1mH
C
E
AS
231
mJ
T
C
=25
°
C
Power Dissipation
B
T
C
=100
°
C
176
88
41
20
P
D
W
T
A
=25
°
C
1.9
1.2
P
DSM
W
°C
Power Dissipation
A
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
AOT240L/AOB240L
AOTF240L
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
15
65
15
65
R
θ
JA
Steady-State
Steady-State
R
θ
JC
0.85
3.6
* Surface mount package TO263
Rev.3.0: November 2013
Page 1 of 7
AOT240L/AOB240L/AOTF240L
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
40
V
V
DS
=40V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
，
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
TO220/TO220F
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.2
nA
V
V
GS(th)
I
D(ON)
1
1.7
400
A
2.4
3.7
2.9
4.7
m
Ω
m
Ω
m
Ω
m
Ω
T
J
=125
°
C
V
GS
=4.5V, I
D
=20A
3
3.7
2.6
3.5
TO220/TO220F
V
GS
=10V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
2.1
2.7
TO263
V
GS
=4.5V, I
D
=20A
TO263
V
DS
=5V, I
D
=20A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
78
S
V
A
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
G
0.65
1
105
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
3510
1070
68
pF
pF
pF
Ω
V
GS
=0V, V
DS
=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=20V, I
D
=20A
V
GS
=10V, V
DS
=20V, R
L
=1
Ω
,
0.5
1
1.5
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
49
22
9
72
32
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7
11
10
38
11
ns
R
GEN
=3
Ω
t
D(off)
t
f
ns
ns
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
58
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design, and the maximum temperature of 175
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: November 2013
Page 2 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
3.5V
7V
10V
V
DS
=5V
3V
125
°
C
25
°
C
Vgs=2.5V
4
1
1.5
2
2.5
3
3.5
4
0
1
2
3
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
8
6
4
2
0
2
1.8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=20A
V
GS
=4.5V
V
GS
=10V
V
GS
=4.5V
I
D
=20A
0.8
0
5
10
15
I
D
(A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
1.0E+01
I
D
=20A
1.0E+00
125
°
C
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25
°
C
25
°
C
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.3.0: November 2013
Page 3 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
V
DS
=20V
I
D
=20A
C
iss
8
4000
3000
2000
1000
0
6
4
C
oss
2
C
rss
0
0
10
20
Q
g
(nC)
30
40
50
0
10
20
30
40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
600
500
400
300
200
100
1000.0
100.0
10.0
1.0
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
DC
T
J(Max)
=175
°
C
T
C
=25
°
C
0.1
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
Pulse Width (s)
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT240L and AOB240L
(Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT240L and AOB240L (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=0.85
°
C/W
P
D
0.1
0.01
Single Pulse
T
on
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT240L and AOB240L (Note F)
0.1
1
10
Rev.3.0: November 2013
Page 4 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
1000.0
100.0
10.0
1.0
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
500
400
300
200
100
0
R
DS(ON)
100
µ
s
1ms
10ms
DC
T
J(Max)
=175
°
C
T
C
=25
°
C
0.1
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
(Volts)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF240L
for AOTF240L (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=3.6
°
C/W
0.1
0.01
P
Single Pulse
T
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF240L (Note F)
Rev.3.0: November 2013
Page 5 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
200
150
T
A
=25
°
C
T
A
=100
°
C
100
100
50
0
T
A
=150
°
C
T
A
=125
°
C
10
1
10
100
1000
0
25
50
75
T
CASE
(
°
C)
Figure 16: Power De-rating (Note F)
100
125
150
175
Time in avalanche, t
A
(
µ
s)
Figure 15: Single Pulse Avalanche capability
(Note C)
120
1000
100
10
T
A
=25
°
C
100
80
60
40
20
0
1
0
25
50
75
100
125
150
175
1E-05
0.001
0.1
10
1000
T
CASE
(
°
C)
Pulse Width (s)
Figure 17: Current De-rating (Note F)
Figure 18: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=65
°
C/W
0.1
P
D
0.01
Single Pulse
1
T
on
T
0.001
0.01
0.1
10
100
1000
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.3.0: November 2013
Page 6 of 7
AOT240L/AOB240L/AOTF240L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.3.0: November 2013
Page 7 of 7
