Alpha—Omega-Semicon-AOT2500L
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AOT2500L/AOB2500L
150V N-Channel
MOSFET
General Description
Product Summary
V
DS
The AOT2500L/AOB2500L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized
due to an extremely low combination of R
DS(ON)
, Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
150V
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
152A
< 6.5m
Ω
(< 6.2m
Ω )
< 7.6m
Ω
(<7.3m
Ω )
100% UIS Tested
100% R
g
Tested
TO-263
D
2
PAK
TO220
Top View
Bottom View
D
Top View
Bottom View
D
D
D
D
G
S
G
S
S
D
D
G
G
S
G
AOT2500L
AOB2500L
S
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
±20
152
V
A
T
C
=25
°
C
Continuous Drain
Current
I
D
T
C
=100
°
C
107
Pulsed Drain Current
C
I
DM
440
T
A
=25
°
C
T
A
=70
°
C
11.5
9.0
Continuous Drain
Current
I
DSM
A
Avalanche Current
C
I
AS
65
A
Avalanche energy L=0.3mH
C
E
AS
634
mJ
T
C
=25
°
C
Power Dissipation
B
T
C
=100
°
C
375
P
D
W
187.5
2.1
T
A
=25
°
C
P
DSM
W
°C
Power Dissipation
A
1.3
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
48
60
R
θ
JC
0.26
0.4
* Surface mount package TO263
Rev.1. 0: July 2013
Page 1 of 6
AOT2500L/AOB2500L
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
150
V
V
DS
=150V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
3.5
nA
V
V
GS(th)
V
DS
=V
GS
，
I
D
=250
µ
A
2.3
2.8
5.4
V
GS
=10V, I
D
=20A
6.5
m
Ω
m
Ω
m
Ω
m
Ω
TO220
T
J
=125
°
C
10.2
12.3
V
GS
=6V, I
D
=20A
TO220
5.9
5.1
5.6
7.6
6.2
7.3
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
TO263
V
GS
=6V, I
D
=20A
TO263
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
70
S
V
A
0.66
1
Maximum Body-Diode Continuous Current
152
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
6460
586
22
pF
pF
pF
Ω
V
GS
=0V, V
DS
=75V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=75V, I
D
=20A
V
GS
=10V, V
DS
=75V, R
L
=3.75
Ω
,
1
2.1
3.2
SWITCHING PARAMETERS
Q
g(10V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
97
22.5
17
136
nC
nC
nC
ns
ns
ns
ns
18.5
20
R
GEN
=3
Ω
t
D(off)
t
f
67.5
14
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
90
ns
Q
rr
nC
1090
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150
°
C. The value in any given application
depends on the user’s specific board design, and the maximum temperature of 175
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1. 0: July
2013
Page 2 of 6
AOT2500L/AOB2500L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
5V
6V
V
DS
=5V
4.5V
125
°
C
V
GS
=4V
25
°
C
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
2.6
8
6
4
2
2.4
2.2
2
V
GS
=10V
I
D
=20A
V
GS
=6V
1.8
1.6
1.4
1.2
1
V
GS
=10V
V
GS
I
D
=20A
=6V
0.8
0
25
50
75
100 125 150
175 200
0
5
10
15
I
D
(A)
20
25
30
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
12
9
1.0E+02
I
D
=20A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
125
°
C
6
25
°
C
25
°
C
3
0
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1. 0: July
2013
Page 3 of 6
AOT2500L/AOB2500L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
V
DS
=75V
I
D
=20A
8
8000
6000
4000
2000
0
C
iss
6
4
C
oss
2
C
rss
0
0
20
40
Q
g
(nC)
60
80
100
0
25
50
75
100
125
150
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
DC
T
J(Max)
=175
°
C
T
C
=25
°
C
0.1
0.0
1
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
10
V
DS
(Volts)
Pulse Width (s)
V
GS
> or equal to 6V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=0.4
°
C/W
P
D
0.1
0.01
Single Pulse
T
on
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1. 0: July
2013
Page 4 of 6
AOT2500L/AOB2500L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
400
350
300
T
A
=25
°
C
250
T
A
=100
°
C
100
T
A
=150
°
C
200
150
100
50
T
A
=125
°
C
10
0
1
10
100
1000
0
25
50
75
T
CASE
(
°
C
)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, t
A
(
µ
s)
Figure 12: Single Pulse Avalanche capability
(Note C)
200
1000
100
10
T
A
=25
°
C
150
100
50
0
1
0
25
50
75
T
CASE
(
°
C
)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=60
°
C/W
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1. 0: July
2013
Page 5 of 6
AOT2500L/AOB2500L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.1. 0: July
2013
Page 6 of 6
