Alpha—Omega-Semicon-AOT380A60CL
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AOTF380A60CL/AOT380A60CL/AOB380A60CL
600V,
a
MOS5
TM
N-Channel Power Transistor
General Description
Product Summary
• Proprietary
a
MOS5
TM
technology
• Low R
DS(ON)
V
DS
@ T
j,max
I
DM
700V
44A
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast
reverse recovery
R
DS(ON),max
Q
g,typ
< 0.38Ω
18nC
E
oss
@ 400V
2.6
m
J
Applications
100% UIS Tested
100% R
g
Tested
• SMPS with PFC, Flyback and LLC topologies
• Silver ATX ,adapter, TV, lighting, Server power
TO-220
TO-220F
TO-263
D
2
PAK
D
S
G
S
S
D
G
D
G
G
S
AOTF380A60CL
AOB380A60CL
AOT380A60CL
Orderable Part Number
AOT380A60CL
Package Type
TO-220
Form
Tube
Tube
Minimum Order Quantity
1000
1000
800
AOTF380A60CL
AOB380A60CL
TO-220F
TO263
Tape and reel
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
AOT(B)380A60CL
AOTF380A60CL
Units
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage (dynamic) AC( f>1Hz)
T
C
=25°C
600
±20
±3 0
V
V
V
V
GS
V
GS
11
11*
I
D
T
C
=100°C
A
Continuous Drain Current
7.2
7.2*
Pulsed Drain Current
C
I
DM
I
AR
44
2.5
3.1
Avalanche Current
C
A
Repetitive avalanche energy
C
Single pulsed avalanche energy
G
(T
J
=25°C,
V
GS
=10V, I
L
=2Apk, L=105mH, R
GS
=25
W
)
E
AR
mJ
E
AS
210
100
20
mJ
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
T
C
=25°C
dv/dt
V/ns
W
W/°C
°C
131
1.0
27
P
D
Power Dissipation
B
Derate above 25°C
0.2
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
300
Maximum lead temperature for soldering
purpose, 1/8″ from case for 5 seconds
T
L
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
Symbol
R
q
JA
AOT(B)380A60CL
AOTF380A60CL
Units
65
65
°C/W
R
q
CS
0.5
—
°C/W
°C/W
R
q
JC
0.95
4.6
* Drain current limited by maximum junction temperature.
Rev.3.0: September
2020
Page 1 of 6
AOTF380A60CL/AOT380A60CL/AOB380A60CL
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250μA, V
GS
=0V, T
J
=25°C
I
D
=250μA, V
GS
=0V, T
J
=150°C
600
BV
DSS
Drain-Source Breakdown Voltage
V
700
BV
DSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
V/
o
C
I
D
=250μA, V
GS
=0V
0.44
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
J
=125°C
V
DS
=0V, V
GS
=±20V
V
DS
=5V
,
I
D
=250
m
A
V
GS
=10V, I
D
=5.5A
V
DS
=10V, I
D
=5.5A
I
S
=5.5A,V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
m
A
10
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Gate-Body leakage current
Gate Threshold Voltage
±100
3.8
nA
V
2.6
3.2
0.33
9.3
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.38
Ω
S
V
SD
0.85
1.2
11
44
V
I
S
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
C
A
I
SM
A
DYNAMIC PARAMETERS
C
iss
Input Capacitance
955
29
pF
pF
V
GS
=0V, V
DS
=100V, f=1MHz
C
oss
Output Capacitance
Effective output capacitance, energy
related
H
C
o(er)
C
o(tr)
30
pF
pF
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
Effective output capacitance, time
related
I
122
V
GS
=0V, V
DS
=100V, f=1MHz
f=1MHz
C
rss
R
g
Reverse Transfer Capacitance
Gate resistance
2.4
4.8
pF
Ω
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
18
7
nC
nC
nC
ns
ns
ns
ns
ns
V
GS
=10V, V
DS
=480V, I
D
=5.5A
Gate Source Charge
Gate Drain Charge
4.5
20
13
43
16
251
19
3.1
Turn-On DelayTime
V
GS
=10V, V
DS
=400V, I
D
=5.5A,
Turn-On Rise Time
R
G
=5
W
t
D(off)
t
f
Turn-Off DelayTime
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Body Diode Reverse Recovery Charge
I
F
=5.5A, dI/dt=100A/
m
s, V
DS
=400V
I
rm
A
Q
rr
m
C
A. The value of R
q
JA
is measured with the device in a still air environment with T
A
=25
°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25
°
C.
D. The R
q
JA
is the sum of the thermal impedance from junction to case R
q
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
m
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. This is the absoluted maximum rating. Parts are 100% tested at T
J
=25
°
C
,
L=60mH, I
AS
=1A, V
DD
=150V, R
G
=25
Ω
.
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE.
IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION.
CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING
ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS’ products are provided subject to AOS’ terms and conditions of sale which are set forth at:
Rev.3.0: Septermber 2020
Page 2 of 6
AOTF380A60CL/AOT380A60CL/AOB380A60CL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
25
20
15
10
5
-55
°
C
V
DS
=10V
10V
8V
7V
125
°
C
6.5V
6V
25
°
C
V
GS
=5.5V
9
0
0.1
0
3
6
12
15
2
4
6
8
10
V
DS
(Volts)
Figure 1: On-Region Characteristics
V
GS
(Volts)
Figure 2: Transfer Characteristics
3
1
0.8
0.6
0.4
0.2
0
2.5
2
V
GS
=10V
I
D
=5.5A
V
GS
=10V
1.5
1
0.5
0
0
3
6
9
12
15
-100
-50
0
50
100
150
200
I
D
(A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1.3
1.2
1.1
1
125
°
C
25
°
C
0.9
0.8
0.7
-100
-50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
T
J
(°C)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Figure 5: Break Down vs. Junction Temparature
Rev.3.0: Septermber 2020
Page 3 of 6
AOTF380A60CL/AOT380A60CL/AOB380A60CL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
V
DS
=480V
I
D
=5.5A
C
iss
C
oss
6
C
rss
3
1
0
0
0
5
10
15
20
25
30
0
100
200
300
V
DS
(Volts)
400
500
600
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10
8
12
10
8
6
6
E
oss
4
4
2
2
0
0
0
100
200
300
400
500
600
0
25
50
75
100
125
150
V
DS
(Volts)
Figure 9: Coss stored Energy
T
CASE
(
°
C)
Figure 10: Current De-rating (Note F)
1000
100
10
1000
100
10
10
m
s
10
m
s
R
DS(ON)
limited
R
DS(ON)
limited
100
m
s
100
m
s
1
1
DC
1ms
1ms
DC
10ms
10ms
0.1
0.01
0.1
0.01
T
J(Max)
=150
°
C
T
C
=25
°
C
T
J(Max)
=150
°
C
T
C
=25
°
C
1s
1
10
100
1000
1
10
100
1000
V
DS
(Volts)
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe Operating
Figure 11: Maximum Forward Biased Safe Operating
Area for AOTF380A60CL (Note F)
Area for AOT(B)380A60CL (Note F)
Rev.3.0: Septermber 2020
Page 4 of 6
AOTF380A60CL/AOT380A60CL/AOB380A60CL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
q
JC
.R
q
JC
R
q
JC
=4.6
°
C/W
1
0.1
P
DM
0.01
Single Pulse
T
on
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF380A60CL (Note F)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
q
JC
.R
q
JC
R
q
JC
=0.95
°
C/W
1
0.1
P
DM
T
on
0.01
0.001
Single Pulse
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)380A60CL (Note F)
Rev.3.0: Septermber 2020
Page 5 of 6
AOTF380A60CL/AOT380A60CL/AOB380A60CL
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.3.0: Septermber 2020
Page 6 of 6
