Alpha—Omega-Semicon-AOTF7S65
| Part # | Alpha—Omega-Semicon-AOTF7S65 |
Download  | Alpha—Omega-Semicon-AOTF7S65 |
AOT7S65L/AOB7S65L/AOTF7S65L/AOTF7S65
650V 7A
a
MOS
TM
Power Transistor
General Description
Product Summary
V
DS
@ T
j,max
I
DM
750V
30A
The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65
have been fabricated using the advanced
a
MOS
TM
high
voltage process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
R
DS(ON),max
Q
g,typ
0.65
W
9.2nC
2
m
J
E
oss
@ 400V
100% UIS Tested
100% R
g
Tested
Top View
TO-263
D
2
PAK
TO-220
TO-220F
D
D
D
G
S
S
S
D
D
S
G
G
G
AOT7S65L
AOTF7S65(L)
AOB7S65L
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
AOT7S65L/AOB7S65L
AOTF7S65
AOTF7S65L
Units
Drain-Source Voltage
V
DS
650
V
V
Gate-Source Voltage
V
GS
±30
7*
T
C
=25°C
7
5
7*
5*
Continuous Drain
Current
I
D
T
C
=100°C
5*
A
Pulsed Drain Current
C
I
DM
I
AR
30
1.7
43
86
35
Avalanche Current
C
A
mJ
Repetitive avalanche energy
C
Single pulsed avalanche energy
G
T
C
=25°C
E
AR
E
AS
mJ
W
104
0.8
27
P
D
Power Dissipation
B
Derate above 25
o
C
0.3
0.2
W/
o
C
MOSFET dv/dt ruggedness
100
dv/dt
V/ns
°C
Peak diode recovery dv/dt
H
20
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8″ from case for 5 seconds
J
Thermal Characteristics
T
L
300
°C
Parameter
Symbol
AOT7S65L/AOB7S65L
AOTF7S65
AOTF7S65L
Units
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
R
q
JA
65
65
65
°C/W
R
q
CS
R
q
JC
0.5
1.2
—
—
°C/W
°C/W
Maximum Junction-to-Case
3.6
4.7
* Drain current limited by maximum junction temperature.
Rev.4.0: January 2021
Page 1 of 7
AOT(B)7S65L/AOTF7S65(L)
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250μA, V
GS
=0V, T
J
=25°C
I
D
=250μA, V
GS
=0V, T
J
=150°C
V
DS
=650V, V
GS
=0V
650
–
750
–
–
–
BV
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
700
V
–
1
I
DSS
m
A
V
DS
=520V, T
J
=150°C
–
10
–
–
V
DS
=0V, V
GS
=±30V
I
GSS
–
±100
4
Gate-Body leakage current
Gate Threshold Voltage
n
A
V
V
DS
=5V,I
D
=250
m
A
V
GS(th)
2.6
3.3
0.54
1.48
0.82
–
V
GS
=10V, I
D
=3.5A, T
J
=25°C
V
GS
=10V, I
D
=3.5A, T
J
=150°C
I
S
=3.5A,V
GS
=0V, T
J
=25°C
–
–
–
–
–
0.65
1.64
1.2
7
W
W
V
R
DS(ON)
Static Drain-Source On-Resistance
V
SD
I
S
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
C
A
I
SM
–
30
A
DYNAMIC PARAMETERS
C
iss
Input Capacitance
Output Capacitance
–
–
434
30
–
–
pF
pF
V
GS
=0V, V
DS
=100V, f=1MHz
C
oss
Effective output capacitance, energy
related
H
C
o(er)
C
o(tr)
–
–
23
80
–
–
pF
pF
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
Effective output capacitance, time
related
I
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
C
rss
R
g
Reverse Transfer Capacitance
Gate resistance
–
–
1
–
–
pF
17.5
W
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
–
–
–
–
–
–
–
–
–
–
9.2
2.5
2.7
21
–
–
–
–
–
–
–
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=480V, I
D
=3.5A
V
GS
=10V, V
DS
=400V, I
D
=3.5A,
14
R
G
=25
W
t
D(off)
t
f
55
15
t
rr
I
F
=3.5A,dI/dt=100A/
m
s,V
DS
=400V
I
F
=3.5A,dI/dt=100A/
m
s,V
DS
=400V
I
F
=3.5A,dI/dt=100A/
m
s,V
DS
=400V
224
19
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
–
–
–
ns
A
I
rm
Q
rr
2.8
m
C
Body Diode Reverse Recovery Charge
A. The value of
R
q
JA
is measured with the device in a still air environment with T
A
=25
°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25
°
C.
D. The R
q
JA
is the sum of the thermal impedance from junction to case
R
q
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
m
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=1.7A, V
DD
=150V, Starting T
J
=25
°
C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE.
IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION.
CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS’ products are provided subject to AOS’ terms and conditions of sale which are set forth at:
Rev.4.0: January 2021
Page 2 of 7
AOT(B)7S65L/AOTF7S65(L)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
8
14
7V
10V
12
10
7V
10V
6V
6V
5.5V
8
6
5.5V
6
5V
4
5V
4
2
0
V
GS
=4.5V
2
V
GS
=4.5V
0
0
5
10
15
20
0
5
10
15
20
V
DS
(Volts)
V
DS
(Volts)
Figure 2: On-Region Characteristics@125
°
C
Figure 1: On-Region Characteristics@25
°
C
100
10
1.5
1.2
0.9
0.6
0.3
0.0
-55
°
C
V
DS
=20V
125
°
C
V
GS
=10V
1
0.1
0.01
25
°
C
0
3
6
9
12
15
2
4
6
8
10
V
GS
(Volts)
Figure 3: Transfer Characteristics
I
D
(A)
Figure 4: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
3
2.5
2
V
GS
=10V
I
D
=3.5A
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Temperature (°C)
T
J
(
o
C)
Figure 5: On-Resistance vs. Junction Temperature
Figure 6: Break Down vs. Junction Temperature
Rev.4.0: January 2021
Page 3 of 7
AOT(B)7S65L/AOTF7S65(L)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
12
9
V
DS
=480V
I
D
=3.5A
125
°
C
25
°
C
6
3
0
0.0
0.2
0.4
0.6
0.8
1.0
0
3
6
9
12
15
V
SD
(Volts)
Q
g
(nC)
Figure 7: Body-Diode Characteristics (Note E)
Figure 8: Gate-Charge Characteristics
10000
1000
100
10
5
4
3
2
1
0
C
iss
E
oss
C
oss
C
rss
1
0
0
0
100
200
300
400
500
600
100
200
300
400
500
600
V
DS
(Volts)
Figure 10: Coss stored Energy
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
10
100
10
1
10
m
s
R
DS(ON)
limited
R
DS(ON)
limited
10
m
s
100
m
s
100
m
s
1
1ms
10ms
0.1s
1s
1ms
DC
DC
10ms
0.1
0.1
0.01
T
J(Max)
=150
°
C
T
C
=25
°
C
T
J(Max)
=150
°
C
T
C
=25
°
C
0.01
1
10
100
1000
1
10
100
1000
V
DS
(Volts)
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF7S65 (Note F)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)7S65L (Note F)
Rev.4.0: January 2021
Page 4 of 7
AOT(B)7S65L/AOTF7S65(L)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10
m
s
80
60
40
20
0
R
DS(ON)
limited
10
100
m
s
1
1ms
10ms
0.1s
1s
DC
0.1
0.01
T
J(Max)
=150
°
C
T
C
=25
°
C
1
10
100
1000
25
50
75
100
125
150
175
V
DS
(Volts)
T
CASE
(
°
C)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF7S65L (Note F)
Figure 14: Avalanche
energy
8
6
4
2
0
0
25
50
75
100
125
150
T
CASE
(
°
C)
Figure 15: Current De-rating (Note B)
Rev.4.0: January 2021
Page 5 of 7
AOT(B)7S65L/AOTF7S65(L)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
q
JC
.R
q
JC
R
q
JC
=1.2
°
C/W
1
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)7S65L (Note F)
10
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
q
JC
.R
q
JC
R
q
JC
=3.6
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
T
on
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF7S65 (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
q
JC
.R
q
JC
R
q
JC
=4.7
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
T
on
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF7S65L (Note F)
Rev.4.0: January 2021
Page 6 of 7
