Alpha—Omega-Semicon-AOW15S65
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AOW15S65/AOWF15S65
650V 15A
α
MOS
TM
Power Transistor
General Description
Product Summary
V
DS
@ T
j,max
I
DM
750V
60A
The AOW15S65
& AOWF15S65 have been fabricated
using the advanced
α
MOS
TM
high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
R
DS(ON),max
Q
g,typ
0.29
Ω
17.2nC
3.6
µ
J
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
E
oss
@ 400V
100% UIS Tested
100% R
g
Tested
TO-262
TO-262F
D
Top View
Bottom View
Top View
Bottom View
G
G
S
G
S
S
D
D
D
S
G
D
S
G
AOW15S65
AOWF15S65
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
AOW15S65
AOWF15S65
Units
Drain-Source Voltage
Gate-Source Voltage
V
DS
650
V
V
V
GS
±30
T
C
=25
°
C
15
10
15*
10*
Continuous Drain
Current
I
D
T
C
=100
°
C
A
Pulsed Drain Current
C
Avalanche Current
C
I
DM
I
AR
60
2.4
86
A
mJ
Repetitive avalanche energy
C
Single pulsed avalanche energy
G
T
C
=25
°
C
E
AR
E
AS
173
mJ
W
W/
o
C
208
1.7
28
P
D
Power Dissipation
B
Derate above 25
o
C
0.22
100
20
MOSFET dv/dt ruggedness
dv/dt
V/ns
°C
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8″ from case for 5 seconds
J
Thermal Characteristics
T
L
300
°C
Parameter
Symbol
AOW15S65
AOWF15S65
Units
Maximum Junction-to-Ambient
A,D
R
θ
JA
65
65
°
C
/W
Maximum Case-to-sink
A
R
θ
CS
R
θ
JC
0.5
0.6
—
°
C
/W
°
C
/W
Maximum Junction-to-Case
4.5
* Drain current limited by maximum junction temperature.
Rev0: Dec 2011
Page 1 of 6
AOW15S65/AOWF15S65
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
–
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V, T
J
=25
°
C
I
D
=250
µ
A, V
GS
=0V, T
J
=150
°
C
V
DS
=650V, V
GS
=0V
650
–
750
–
BV
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
700
–
V
–
1
I
DSS
µ
A
V
DS
=520V, T
J
=150
°
C
–
10
–
–
±100
4
I
GSS
V
DS
=0V, V
GS
=±30V
Gate-Body leakage current
Gate Threshold Voltage
–
n
Α
V
V
GS(th)
V
DS
=5V,I
D
=250
µ
A
2.6
3.3
V
GS
=10V, I
D
=7.5A, T
J
=25
°
C
V
GS
=10V, I
D
=7.5A, T
J
=150
°
C
I
S
=7.5A,V
GS
=0V, T
J
=25
°
C
–
–
–
–
–
0.254 0.29
Ω
Ω
V
R
DS(ON)
Static Drain-Source On-Resistance
0.68
0.78
–
V
SD
I
S
Diode Forward Voltage
0.82
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
C
–
–
15
60
A
I
SM
A
DYNAMIC PARAMETERS
C
iss
Input Capacitance
Output Capacitance
–
–
841
58
–
–
pF
pF
V
GS
=0V, V
DS
=100V, f=1MHz
C
oss
Effective output capacitance, energy
related
H
C
o(er)
C
o(tr)
–
–
40
–
–
pF
pF
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
Effective output capacitance, time
related
I
150
V
GS
=0V, V
DS
=100V, f=1MHz
C
rss
R
g
Reverse Transfer Capacitance
Gate resistance
–
–
1.1
14
–
–
pF
V
GS
=0V, V
DS
=0V, f=1MHz
Ω
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
–
–
–
–
–
–
–
–
–
–
17.2
4.3
5.6
27
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=480V, I
D
=7.5A
V
GS
=10V, V
DS
=400V, I
D
=7.5A,
24
R
G
=25
Ω
t
D(off)
t
f
90
23
t
rr
I
F
=7.5A,dI/dt=100A/
µ
s,V
DS
=400V
I
F
=7.5A,dI/dt=100A/
µ
s,V
DS
=400V
I
F
=7.5A,dI/dt=100A/
µ
s,V
DS
=400V
320
27
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
ns
A
I
rm
Q
rr
5.5
µ
C
Body Diode Reverse Recovery Charge
A. The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25
°
C
.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C
, using junction-to-case thermal resistance,
and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C
, Ratings are based on low frequency and duty
cycles to keep initial T
J
=25
°
C
.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C
. The SOA curve provides a single pulse ratin g.
G. L=60mH, I
AS
=2.4A, V
DD
=150V, Starting T
J
=25
°
C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2011
Page 2 of 6
AOW15S65/AOWF15S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
25
7V
7V
10V
6V
10V
20
6V
5.5V
15
5.5V
5V
10
5V
V
GS
=4.5V
4
V
GS
=4.5V
5
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
(Volts)
V
DS
(Volts)
Figure 2: On-Region Characteristics@125
°
C
Figure 1: On-Region Characteristics@25
°
C
100
10
1.0
0.8
0.6
0.4
0.2
0.0
-55
°
C
V
DS
=20V
125
°
C
1
V
GS
=10V
25
°
C
0.1
0.01
0
6
12
18
24
30
36
2
4
6
8
10
I
D
(A)
V
GS
(Volts)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
Figure 3: Transfer Characteristics
1.2
1.1
1
3
2.5
2
V
GS
=10V
I
D
=7.5A
1.5
1
0.9
0.5
0
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
Temperature (
°
C
)
Figure 5: On-Resistance vs. Junction Temperature
100
150
200
T
J
(
o
C)
Figure 6: Break Down vs. Junction Temperature
Rev0: Dec 2011
Page 3 of 6
AOW15S65/AOWF15S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
12
9
V
DS
=480V
I
=7.5A
125
°
C
25
°
C
6
3
0
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
Q
g
(nC)
15
20
25
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
Figure 8: Gate-Charge Characteristics
10000
1000
100
10
7
6
5
4
3
2
1
0
C
iss
C
oss
E
oss
C
rss
1
0
0
0
100
200
300
V
DS
(Volts)
400
500
600
100
200
300
DS
(Volts)
400
500
600
V
Figure 10: Coss stored Energy
Figure 9: Capacitance Characteristics
100
100
10
R
DS(ON)
limited
10
µ
s
R
DS(ON)
10
µ
s
limited
10
1
100
µ
s
100
µ
s
1ms
DC
1ms
1
10ms
DC
10ms
0.1s
0.1
0.01
0.1
0.01
T
J(Max)
=150
°
C
T
C
=25
°
C
1s
T
J(Max)
=150
°
C
T
C
=25
°
C
1
10
100
1000
1
10
100
1000
V
DS
(Volts)
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOW15S65 (Note F)
Figure 12: Maximum Forward Biased Safe Operating
Area for AOWF15S65(Note F)
Rev0: Dec 2011
Page 4 of 6
AOW15S65/AOWF15S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
160
120
80
20
16
12
8
40
4
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
T
CASE
(
°
C
)
T
CASE
(
°
C
)
Figure 13: Avalanche
energy
Figure 14: Current De-rating (Note B)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=0.6
°
C
/W
R
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 15: Normalized Maximum Transient Thermal Impedance for AOW15S65 (Note F)
10
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
θ
JC
=4.5
°
C
/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
R
0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOWF15S65 (Note F)
Rev0: Dec 2011
Page 5 of 6
AOW15S65/AOWF15S65
Gate Charge Test Circuit
&
W
av
e
f
orm
Vgs
Qg
10V
+
V
D
C
+
Qgs
Q
g
d
Vds
VDC
–
–
DUT
Vgs
Vds
Ig
Cha
r
ge
Re
s
i
sti
v
e
S
witching Test Circuit &
W
a
v
e
forms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
V
D
C
Rg
–
Vgs
Vgs
t
d(
o
n
)
t
r
t
d(
o
f
f)
t
f
t
on
t
o
f
f
Unclamped Inductive Switching (UIS) Test Circui
t
&
W
avef
o
rms
L
2
E
A
R
=
1
/
2
L
I
AR
BV
D
SS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
D
U
T
Vgs
Vgs
Diode Recover
y
T
e
s
t
C
ircuit
&
W
a
v
e
forms
Q
rr
=
–
I
dt
Vds +
V
d
s –
Ig
DUT
Vgs
I
s
d
t
rr
L
I
F
I
s
d
dI/dt
+
I
RM
Vdd
Vgs
V
D
C
Vdd
–
Vds
Rev0: Dec 2011
Page 6 of 6
