Alpha—Omega-Semicon-AOY66923
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AOY66923
100V N-Channel AlphaSGT
TM
General Description
Product Summary
• Trench Power MOSFET – AlphaSGT
TM
technology
• Low R
DS(ON)
V
DS
100V
58A
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
< 11mΩ
< 15mΩ
• Logic Level Driving
• Excellent Q
G
x R
DS(ON)
Product (FOM)
• RoHS and Halogen-Free Compliant
Applications
100% UIS Tested
100% Rg
Tested
• High Frequency Switching and Synchronous
Rectification
TO-251B (IPAK
short lead)
D
Bottom View
Top View
D
G
S
G
S
D
D
G
S
Orderable Part Number
Package Type
Form
Tube
Minimum Order Quantity
AOY66923
TO-251B
3500
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Maximum
100
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±20
T
C
=25°C
58
Continuous Drain
Current
I
D
T
C
=100°C
36.5
A
Pulsed Drain Current
C
I
DM
130
16.5
13.5
30
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
I
DSM
A
Avalanche Current
C
I
AS
A
C
Avalanche energy
L=0.1mH
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
E
AS
45
mJ
73
P
D
W
Power Dissipation
B
Power Dissipation
A
29
6.2
P
DSM
W
4
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t ≤
10s
R
q
JA
Steady-State
40
1.35
Steady-State
R
q
JC
1.7
Rev.2.1: February 2022
Page 1 of 6
AOY66923
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
m
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
100
V
V
DS
=100V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
μA
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250
m
A
V
GS
=10V, I
D
=20A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.6
11
nA
V
V
GS(th)
1.6
2.1
9.2
16
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
19.5
15
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A, V
GS
=0V
11.7
50
mΩ
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.72
1
V
Maximum Body-Diode Continuous Current
58
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1725
360
7.5
pF
pF
pF
Ω
V
GS
=0V, V
DS
=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.3
0.8
1.3
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
Q
oss
t
D(on)
t
r
Total Gate Charge
25
12.5
6
35
18
nC
nC
nC
nC
nC
ns
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=20A
V
GS
=0V, V
DS
=50V
Gate Source Charge
Gate Drain Charge
3.5
30
Output Charge
Turn-On DelayTime
8.5
3
V
GS
=10V, V
DS
=50V, R
L
=2.5
W
,
R
GEN
=3
W
Turn-On Rise Time
ns
t
D(off)
t
f
Turn-Off DelayTime
23
ns
Turn-Off Fall Time
3.5
41
ns
I
F
=20A, di/dt=500A/
m
s
I
F
=20A, di/dt=500A/
m
s
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Q
rr
156
A. The value of R
q
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25
°
C. The Power
dissipation P
DSM
is based on R
q
JA
t≤ 10s
and the maximum allowed junction temperature of 15
0
°
C. The value in any given application depends on
the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
q
JA
is the sum of the thermal impedance from junction to case R
q
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
m
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsi
n
k
, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25
°
C.
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE.
IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION.
CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS’ products are provided subject to AOS’ terms and conditions of sale which are set forth at:
Rev.2.1: February 2022
Page 2 of 6
AOY66923
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
4.5V
V
DS
=5V
6V
4V
3.5V
125
°
C
25
°
C
V
GS
=3V
4
1
2
3
4
5
6
0
1
2
3
5
V
DS
(Volts)
V
GS
(Volts)
Figure 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
20
15
10
5
2.2
2
V
GS
=10V
I
D
=20A
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=10V
V
GS
=4.5V
I
D
=20A
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
I
D
(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
35
30
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=20A
125
°
C
125
°
C
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
V
GS
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.1: February 2022
Page 3 of 6
AOY66923
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
2000
1500
1000
500
V
DS
=50V
I
D
=20A
8
C
iss
6
4
C
oss
2
C
rss
0
0
0
10
20
30
0
25
50
75
100
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
10
m
s
R
DS(ON)
limited
100
m
s
1ms
10ms
DC
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
0.0
0.01
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
Pulse Width (s)
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
q
JC
.R
q
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
q
JC
=1.7
°
C/W
P
DM
0.1
0.01
Single Pulse
0.001
T
on
T
1E-05
0.0001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.1: February 2022
Page 4 of 6
AOY66923
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
T
CASE
(
°
C)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
2
T
A
=25
°
C
1.5
1
0.5
0
1
1E-05
0.001
0.1
10
1000
0
20
40
60
80
100
Pulse Width (s)
Figure 15: Single Pulse Power Rating
V
DS
(Volts)
Figure 14: Coss stored Energy
Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
q
JA
.R
q
JA
R
q
JA
=50
°
C/W
0.1
P
DM
0.01
0.001
Single Pulse
0.01
T
on
T
0.0001
0.001
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.1: February 2022
Page 5 of 6
AOY66923
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.2.1: February 2022
Page 6 of 6
