Ampleon-ART1K6FHU

Part #Ampleon-ART1K6FHU
Download 
Ampleon-ART1K6FHU
ART1K6FH; ART1K6FHS;  
ART1K6FHG  
Power LDMOS transistor  
Rev. 3 — 8 July 2022  
Product data sheet  
1. Product
 
profile  
1.1 General
 
description  
Based on Advanced Rugged
T
e
chnology (ART), this 1600 W LDMOS RF power transistor  
has been designed to cover a wide range of applications for ISM, broadcast and  
communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.  
Table 1.  
Application information  
Test signal  
f
V

DS  

(V)  
50  
P

L  

G

p  

D  

(MHz)  
(W)  
(dB)  
28.7  
29.5  
20.0  
(%)  
77.3  
76.0  
68.0  
CW pulsed

[1]  

CW pulsed

[1]  

CW pulsed

[2]  

108  
108  
352  
1400  
1600  
1200  
55  
50  
[1] Production
 
circuit: t

p

= 100
s;
= 10 %.  
[2] Application
 
circuit: t

p

= 100
s;
= 10 %.  
1.2 Features
 
and benefits  
High breakdown voltage enables class E operation at V

DS

= 48 V  
Suitable for V

DS

= 50 and 55 V  
Qualified up to a maximum of V

DS

= 55 V  
Characterized from 30 V to 55 V for extended power range  
Easy power control  
Integrated dual sided ESD protection enables class C operation and complete switch  
off of the transistor  
Excellent ruggedness with no device degradation  
High efficiency  
Excellent thermal stability  
Designed for broadband operation  
For RoHS compliance see the product details on the Ampleon website  

ART1K6FH(S)(G)  
Power LDMOS transistor  
1.3 Applications  
Industrial, scientific and medical applications  
Plasma generators  
MRI systems  
CO

2

lasers  
Particle accelerators  
Broadcast  
FM radio  
VHF TV  
Communications  
Non cellular communications  
UHF radar  
2. Pinning
 
information  
Table 2.  
Pin  
ART1K6FH (SOT539AN)  
Pinning  
Description  
Simplified outline  
Graphic symbol  
1
2
3
4
5
drain1  
drain2  
gate1  
gate2  
source  
1
1
3
2
4
5
3
5
4
[1]  
[1]  
[1]  
2
sym117  
ART1K6FHS (SOT539BN)  
1
2
3
4
5
drain1  
drain2  
gate1  
gate2  
source  
1
1
3
2
4
5
3
5
4
2
sym117  
ART1K6FHG (SOT1248C)  
1
2
3
4
5
drain1  
drain2  
gate1  
gate2  
source  
1
1
3
2
5
3
5
4
4
2
sym117  
[1] Connected
 
to flange.  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
2 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
3. Ordering
 
information  
Table 3.  
Ordering information  
Package name
 
Orderable part number
 
12NC  
Packing description  
Min. orderable  
quantity (pieces)  
SOT539AN  
SOT539BN  
SOT1248C  
ART1K6FHU  
ART1K6FHSU  
ART1K6FHGJ  
9349 603 27122
 
Tray; 20-fold; non-dry pack  
9349 605 33112
 
Tray; 20-fold; non-dry pack  
9349 605 34118
 
TR13; 100-fold; 56 mm; non-dry pack  
60  
60  
100  
4. Limiting
 
values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
V

DS  

Parameter  
Conditions  
Min  
–
Max  
177  
+13  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
V

GS  

T

stg  

9  
65  
–
V
+150
C  
[1]  
T

j  

225  
C  
[1] Continuous
 
use at maximum temperature will affect the reliability, for details refer to the online MTF  
calculator.  
5. Thermal
 
characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
T

j

= 95
C  
Typ  
Unit  
[1][2]  
[3]  
R

th(j-c)  

Z

th(j-c)  

thermal resistance from junction to case  
0.077 K/W  
0.018 K/W  
transient thermal impedance from junction
 
T

j

= 95
C; t

p

= 100
s;  
to case  
= 10 %  
[1] T

j

is the junction temperature.  
[2] R

th(j-c)

is measured under RF conditions.  
[3] See
 
Figure 1
.  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
3 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
amp01731  
0.1  
Z
th(j-c)  
(K/
W
W
)  
0.08  
(7
)
)  
(6
)
)  
(5
)
)  
(4
)
)  
(3
)
)  
(2
)
)  
(1
)
)  
0.06  
0.04  
0.02  
0
-7  
-6  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
10  
10  
1
10  
t
(s)  
p
(1)
= 1 %  
(2)
= 2 %  
(3)
= 5 %  
(4)
= 10 %  
(5)
= 20 %  
(6)
= 50 %  
(7)
= 100 % (DC)  
Fig 1.
 
Transient thermal impedance from junction to case as a function of pulse  
duration  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
4 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
6. Characteristics  
Table 6.  
DC characteristics  
T

j

= 25
C; per section unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
191  
2.1  
–
Max Unit  
V

(BR)DSS

drain-source breakdown voltage
 
V

GS

= 0 V; I

D

= 5.5 mA  
177  
–
V
V

GS(th)  

I

DSS  

gate-source threshold voltage  
drain leakage current  
V

DS

= 20 V; I

D

= 550 mA
 
1.5  
2.5  
2.8  
–
V
V

GS

= 0 V; V

DS

= 50 V  
–
–
A  
A
I

DSX  

drain cut-off current  
V

GS

= V

GS(th)

+ 3.75 V;  
V

DS

= 20 V  
81  
I

GSS  

gate leakage current  
V

GS

= 13 V; V

DS

= 0 V  
–
–
–
280 nA  
R

DS(on)

drain-source on-state resistance
 
V

GS

= V

GS(th)

+ 3.75 V;  
I

D

= 19.25 A  
0.084 –  
Table 7.  
AC characteristics  
T

j

= 25
C; per section unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min Typ  
Max Unit  
C

rs  

feedback capacitance  
V

GS

= 0 V; f = 1 MHz  
V

DS

= 50 V  
–
–
1.71  
1.65  
–
–
pF  
pF  
V

DS

= 55 V  
C

iss  

input capacitance  
output capacitance  
V

GS

= 0 V; f = 1 MHz  
V

DS

= 50 V  
–
–
620  
620  
–
–
pF  
pF  
V

DS

= 55 V  
C

oss  

V

GS

= 0 V; f = 1 MHz  
V

DS

= 50 V  
–
–
193  
185  
–
–
pF  
pF  
V

DS

= 55 V  
amp01456  
1600  
C
oss  
(pF)  
1200  
800  
400  
0
0
10  
20  
30  
40  
50  
(V)  
60  
V
DS  
V

GS

= 0 V; f = 1 MHz  
Fig 2.
 
Output capacitance as a function of drain-source voltage; typical values per  
section  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
5 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
Table 8.  
Test signal: pulsed RF; t

p

= 100
s;
= 5 %; f = 108 MHz; RF performance at V

DS

= 55 V;  

Dq

= 50 mA per section; T

case

= 25
C; unless otherwise specified; in a class-AB production test  
RF characteristics  
I
circuit.  
Symbol  
G

p  

Parameter  
Conditions  
P

L

= 1600 W  
P

L

= 1600 W  
P

L

= 1600 W  
Min  
27  
–
Typ  
28.0  
16  
74  
Max  
Unit  
dB  
dB  
%
power gain  
–
–
–
RL

in  

input return loss  
drain efficiency  

D  

71  
7. Test
 
information  
7.1 Ruggedness
 
in class-AB operation  
The ART1K6FH, ART1K6FHS and ART1K6FHG are capable of withstanding a load  
mismatch corresponding to VSWR
65 : 1 through all phases under the following  
conditions: P

L

= 1400 W pulsed at V

DS

= 50 V and P

L

= 1600 W pulsed at V

DS

= 55 V;  
I

Dq

= 100 mA per section; t

p

= 100
s;
= 10 %; f = 108 MHz.  
7.2 Impedance
 
information  
drain 1  
gate 1  
Z
i
Z
L
gate 2  
drain 2  
amp01314  
Fig 3.
 
Definition of transistor impedance  
Table 9.  
Typical push-pull impedance  
Simulated Z

i

and Z

L

device impedance.  
f
Z

i  

Z

L  

P

L  

(MHz)  
V

DS

= 50 V  
108  
(
)  
(
)  
(W)  
2.4
j8.7  
2.4
j8.7  
3.3 + j0.7  
3.5 + j0.8  
1400  
1600  
V

DS

= 55 V  
108  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
6 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
7.3 Test
 
circuit  
200.3 mm  
C27  
R3  
–
+
T2  
L1  
R1  
C6  
L3  
C8  
C10  
R5/R6  
C16  
C24  
C22  
C12  
C2  
C4  
C3  
90 mm  
C21  
C15  
C19  
C18  
C5  
C1  
C26  
C14  
C20  
C25  
C23  
C13  
L4  
R7/R8  
C17  
C11  
L2  
+
C9  
C7  
R2  
T1  
R4  
–
C28  
amp01457  
12.0 mm  
32.6 mm  
12.0 mm  
46.0 mm  
73.0 mm  
Printed-Circuit Board (PCB): RF-35;

r

= 3.5 F/m; thickness = 0.762 mm.  
See
T
a
ble 10
for a list of components.  
Fig 4.
 
Component layout  
Table 10.
 
List of components  
For test circuit see
Figure 4
.  
Component  
C1, C26  
C2, C3  
Description  
Value  
Remarks  
[1]  
[1]  
[1]  
[1]  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
470 pF  
68 pF  
C4  
43 pF  
C5  
240 pF  
4.7
F
,
5
0 V  
820 pF  
180 pF  
39 pF  
C6, C7  
Murata: GRM32ER71H475KA88L  
TDK: C5750X7R2A475KT/A  
[1]  
[1]  
[1]  
C8, C9, C10, C11  
C12, C13  
C14, C15  
C16, C17  
C18, C19  
C20, C21  
C22, C23  
C24, C25  
C27, C28  
L1, L2  
4.7
F
,
1
00 V  
56 pF  
[1]  
[1]  
[1]  
[1]  
51 pF  
120 pF  
20 pF  
2200
F
,
1
00 V  
47 nH  
air inductor  
Coilcraft: 1515SQ-47N  
Coilcraft: 1515SQ-82N  
SMD 1206  
L3, L4  
air inductor  
82 nH  
R1, R2  
resistor  
4.7 k
  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
7 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
Table 10.
 
List of components
…continued  
For test circuit see
Figure 4
.  
Component  
R3, R4  
Description  
resistor  
Value  
Remarks  
0.01
  
Vishay: WSHP2818  
SMD 1206  
R5, R6, R7, R8  
T1, T2  
resistor  
9.1
  
semi rigid coax  
50
, 160 mm  
EZ141-AL-TP/M17  
[1] American
 
T
e
chnical Ceramics type 100B or capacitor of same quality.  
7.4 Graphical
 
data  
amp01458  
32  
30  
28  
26  
24  
80  
60  
40  
20  
0
η
D
G
η
η  
D
(%
)
)  
p
(dB)  
G
p
0
400  
800  
1200  
1600  
(W)  
2000  
P
L
V

DS

= 55 V; I

Dq

= 100 mA per section; f = 108 MHz;  
V

DS

= 55 V; I

Dq

= 100 mA per section; f = 108 MHz;  
t

p

= 100
s;
= 10 %.  
t

p

= 100
s;
= 10 %.  
(1) P

L(1dB)

= 62.17 dBm (1650 W)  
(2) P

L(3dB)

= 62.67 dBm (1850 W)  
Fig 5.
 
Power gain and drain efficiency as function of  
output power; typical values  
Fig 6.
 
Output power as a function of input power;  
typical values  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
8 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
amp01460  
amp01461  
32  
30  
28  
26  
24  
22  
100  
(1
)
)  
(2
)
)  
(3
)
)  
(4
)
)  
(5
)
)  
G
η
D
p
(dB)  
(%)  
80  
60  
40  
20  
0
(5)  
(4)  
(3)  
(2)  
(1)  
0
400  
800  
1200  
1600  
(W)  
2000  
0
400  
800  
1200  
1600  
P (W)  
L
2000  
P
L
V

DS

= 55 V; f = 108 MHz; t

p

= 100
s;
= 10 %.  
V

DS

= 55 V; f = 108 MHz; t

p

= 100
s;
= 10 %.  
(1) I

Dq

= 50 mA per section  
(2) I

Dq

= 100 mA per section  
(3) I

Dq

= 200 mA per section  
(4) I

Dq

= 400 mA per section  
(5) I

Dq

= 600 mA per section  
(1) I

Dq

= 50 mA per section  
(2) I

Dq

= 100 mA per section  
(3) I

Dq

= 200 mA per section  
(4) I

Dq

= 400 mA per section  
(5) I

Dq

= 600 mA per section  
Fig 7.
 
Power gain as a function of output power;  
typical values  
Fig 8.
 
Drain efficiency as a function of output power;  
typical values  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
9 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
amp01462  
amp01463  
32  
100  
G
η
D
p
(dB)  
(%)  
(2
)
)  
(1
)
)  
(3
)
)  
(4
)
)  
(5
)
)  
(6)  
80  
60  
40  
20  
0
29.5  
27  
(1)  
(2)  
(3)  
(4)  
(5)  
(6)  
24.5  
22  
0
400  
800  
1200  
1600  
(W)  
2000  
0
400  
800  
1200  
1600  
P (W)  
L
2000  
P
L
I

Dq

= 100 mA per section; f = 108 MHz; t

p

= 100
s;  
= 10 %.  
I

Dq

= 100 mA per section; f = 108 MHz; t

p

= 100
s;  
= 10 %.  
(1) V

DS

= 55 V  
(1)  
V

DS

= 55 V  
(2) V

DS

= 50 V  
(3) V

DS

= 45 V  
(4) V

DS

= 40 V  
(5) V

DS

= 35 V  
(6) V

DS

= 30 V  
(2) V

DS

= 50 V  
(3) V

DS

= 45 V  
(4) V

DS

= 40 V  
(5) V

DS

= 35 V  
(6) V

DS

= 30 V  
Fig 9.
 
Power gain as a function of output power;  
typical values  
Fig 10.
 
Drain efficiency as a function of output power;  
typical values  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
10 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
8. Package
 
outline  
Flanged balanced ceramic package; 2 mounting holes; 4 leads  
SOT539AN  
(note 3)  
D
X
A
detail X  
F
D
U
1
B
1
q
C
w
H
M
M
C
2
1
c
1
3
2
4
E
E
1
p
H
U
2
5
w
M
M
M
B
A
1
L
A
w
b
M
3
Q
e
w
3
0.25  
0.01  
0
5
10 mm  
scale  
Dimensions  
(1)  
(2)  
Unit  
A
b
c
D
D
1
E
E
1
e
F
H
H
1
L
p
Q
q
U
1
U
w
w
2
2
1
max 4.7 11.81
 
0.18 31.55
 
31.52 9.5  
mm nom  
min 4.2 11.56
 
0.10 30.94
 
30.96 9.3  
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375  
inches nom  
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365  
9.53  
1.75 17.12
 
25.53 3.48
 
3.30 2.26  
41.28 10.29  
13.72  
0.54  
35.56  
1.400  
0.25 0.51  
0.01 0.02  
9.27  
1.50 16.10
 
25.27 2.97
 
3.05 2.01  
0.069 0.674 1.005 0.137 0.130 0.089  
41.02 10.03  
1.625 0.405  
0.059 0.634 0.995 0.117 0.120 0.079  
1.615 0.395  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.  
3. ceramic window frame has a minimum thickness of 0.400 mm.  
sot539an_po  
References  
Outline  
version  
European  
projection  
Issue date  
20-04-20  
IEC  
JEDEC  
JEITA  
SOT539AN  
Fig 11.
 
Package outline SOT539AN  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
11 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
Earless flanged balanced ceramic package; 4 leads  
SOT539BN  
(note 2)  
D
X
A
F
detail X  
5
D
1
D
U
H
1
1
c
w
D
2
1
2
E
1
U
E
H
2
L
3
4
b
w
Q
3
e
0
5
10 mm  
scale  
Dimensions  
(1)  
Unit  
A
b
c
D
D
1
E
E
1
e
F
H
H
1
L
Q
U
1
U
2
w
w
3
2
max 4.7 11.81
 
0.18 31.55
 
31.52 9.5  
mm nom  
min 4.2 11.56
 
0.10 30.94
 
30.96 9.3  
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375  
inches nom  
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365  
9.53  
1.75 17.12
 
25.53 3.48
 
2.26 32.39
 
10.29  
13.72  
0.54  
0.25 0.25  
0.01 0.01  
9.27  
1.50 16.10
 
25.27 2.97
 
2.01 32.13
 
10.03  
0.069 0.674 1.005 0.137 0.089 1.275 0.405  
0.059 0.634 0.995 0.117 0.079 1.265 0.395  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
2. ceramic window frame has a minimum thickness of 0.400 mm.  
sot539bn_po  
References  
Outline  
version  
European  
projection  
Issue date  
20-04-20  
IEC  
JEDEC  
JEITA  
SOT539BN  
Fig 12.
 
Package outline SOT539BN  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
12 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
Earless flanged LDMOST ceramic package; 4 leads  
SOT1248C  
0.3 mm gauge plane  
D
L
p
F
A
5
D
U
1
y
Q
detail X  
v
A
B
c
1
X
1
2
E
U
2
E
H
1
3
4
A
b
w
2
B
α
e
0
5
10 mm  
H
scale  
Dimensions  
(1)  
Unit  
A
b
c
D
D
1
e
E
E
F
L
Q
U
1
U
2
v
w
2
y
α
1
p
°
max  
5.5  
11.81 0.18
 
31.55 31.52  
9.50 9.53 1.75
 
14.70 1.38 0.195
 
32.39 10.29
 
0.25 0.25 0.15  
7
nom  
min  
13.72  
0.540  
mm  
°
°
4.2  
11.56 0.10
 
30.94 30.96  
9.30 9.27 1.50
 
14.50 0.98 0.045
 
32.13 10.03  
0.374 0.375 0.069
 
0.579 0.055 0.008 1.275 0.405 0.01 0.01
 
0.006  
0
7
max 0.217 0.465 0.007
 
1.242 1.241  
nom  
min 0.165 0.455 0.004
 
1.218 1.219  
inches  
Note  
°
0.366 0.365 0.059
 
0.571 0.039 0.002 1.265 0.395  
0
1. Millimeter dimensions are derived from the original inch dimensions.  
sot1248c_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
13-04-16  
13-08-15  
SOT1248C  
Fig 13.
 
Package outline SOT1248C  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
13 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
9. Handling
 
information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or  
equivalent standards.  
Table 11.
 
ESD sensitivity  
ESD model  
Class  
C2A

[1]  

2

[2]  

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002  
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001  
[1] CDM
 
classification C2A is granted to any part that passes after exposure to an ESD pulse of 500
V
.  
[2] HBM
 
classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000
V
.  
10. Abbreviations  
Table 12.
 
Abbreviations  
Acronym  
CW  
Description  
Continuous Wave  
ESD  
ElectroStatic Discharge  
FM  
Frequency Modulation  
ISM  
Industrial, Scientific and Medical  
Laterally Diffused Metal-Oxide Semiconductor  
Magnetic Resonance Imaging  
Median Time to Failure  
LDMOS  
MRI  
MTF  
RoHS  
SMD  
UHF  
Restriction of Hazardous Substances  
Surface Mounted Device  
Ultra High Frequency  
VHF  
Very High Frequency  
VSWR  
Voltage Standing Wave Ratio  
11. Revision
 
history  
Table 13.
 
Revision history  
Document ID  
Release date
 
Data sheet status
 
Change notice
 
Supersedes  
ART1K6FH_1K6FHS_1K6FHG v.3
 
20220708  
Product data sheet
 
–  
ART1K6FH_1K6FHS_1K6FHG  
v.2  
Modifications:  
•
T
a
ble 4 on page 3
: changed values gate-source voltage  
•
T
a
ble 6 on page 5
: changed value gate-source voltage  
ART1K6FH_1K6FHS_1K6FHG v.2
 
20220322  
Product data sheet
 
–  
ART1K6FH v.1  
ART1K6FH v.1  
20200925  
Product data sheet
 
–  
–
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
14 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
12. Legal information  
12.1 Data
 
sheet status  
Document status

[1][2]  

Product status

[3]  

Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet
 
Qualification  
Product [short] data sheet
 
Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL

.  
Right to make changes —
Ampleon reserves the right to change  
12.2 Definitions  
information including but without limitation specifications and product  
descriptions published in this document at any time and without notice. This  
document supersedes and replaces all information regarding these products  
supplied prior to the publication hereof.  
Draft —
The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Suitability for use —
Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
Ampleon product can reasonably be expected to result in personal injury,  
death or severe property or environmental damage. Insofar as a customer or  
another party nevertheless uses Ampleon products unlawfully for such  
purposes, Ampleon and its suppliers are not liable for any damages.  
Short data sheet —
A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Applications —
Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Product specification —
The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. An agreement according to which the functions  
and qualities of Ampleon products exceed those described in the Product  
data sheet is invalid.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon is not liable for any  
assistance with applications or customer product design. It is customer’s sole  
responsibility to determine whether the Ampleon product is suitable and fit for  
the customer’s applications and products planned, as well as for the planned  
application and use of customer’s third party customer(s). Customers shall  
provide appropriate design and operating safeguards to minimize the risks  
associated with their applications and products.  
12.3 Disclaimers  
Ampleon is not liable related to any default, damage, costs or problem which  
is based on any weakness or default in the customer’s applications or  
products, or the application or use by customer’s third party customer(s).  
Customer is responsible for and shall do all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon is not liable in this  
respect.  
Maturity —
After the relevant product(s) have passed the Release Gate in  
Ampleon’s release process, Ampleon will confirm the final version in writing.  
Limited warranty and liability —
Ampleon uses its best efforts to keep the  
information in this document accurate and reliable. However, Ampleon gives  
no representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and assumes no liability for the  
consequences of the use of such information. Ampleon is not liable for  
content provided by an external information source.  
Limiting values —
Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not guaranteed. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event and irrespective of the legal basis (contract, tort (including  
negligence) statutory liability, misrepresentation, indemnity or any other area  
of law) shall Ampleon be liable for any indirect, incidental, punitive, special or  
consequential damages (including but without limitation loss of profit or  
revenue, loss of use or loss of production, loss of data, cost of capital, cost of  
substitute goods, property damage external to the Ampleon products and any  
damage, expenditure or loss arising out of such damage, business  
interruption, costs related to the removal or replacement of any products or  
rework charges) or any of the foregoing suffered by any third party.  
Terms and conditions of commercial sale —
Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at

, unless otherwise agreed in a valid written  
individual agreement. In the event of signing an individual agreement the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to and rejects the validity of customer’s terms and  
conditions regarding the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale
of Ampleon.  
ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
15 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
No offer to sell or license —
Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
or other guarantees of any kind with respect to such automotive applications,  
use and specifications, and (b) such use is solely and exclusively at  
customer’s own risk, and (c) customer fully indemnifies Ampleon against any  
and all liability, damages or failed product claims, including against third  
parties, arising out of customer’s design and use of the product for automotive  
applications.  
Export control —
This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Translations —
A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Non-automotive qualified products —
Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon is  
not liable for inclusion and/or use of non-automotive qualified products in  
automotive equipment or applications.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
In the event that customer breaches this and uses the products for design  
and use in automotive applications in accordance with automotive  
specifications and standards, (a) Ampleon gives no warranty, representation  
13. Contact information  
For more information, please visit:

For sales office addresses, please visit:

ART1K6FH_1K6FHS_1K6FHG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2022. All rights reserved.  
Product data sheet  
Rev. 3 — 8 July 2022  
16 of 17  

ART1K6FH(S)(G)  
Power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1  
1.1  
1.2  
1.3  
General description
 
. . . . . . . . . . . . . . . . . . . . .
 
1  
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
 
1  
Applications .
 
. . . . . . . . . . . . . . . . . . . . . . . . . .
 
2  
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
 
2  
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
 
3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
 
3  
Thermal characteristics
 
. . . . . . . . . . . . . . . . . .
 
3  
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
 
5  
7
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
 
6  
Ruggedness in class-AB operation
 
. . . . . . . . .
 
6  
Impedance information . . . . . . . . . . . . . . . . . . .
 
6  
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
7  
Graphical data
 
. . . . . . . . . . . . . . . . . . . . . . . . .
 
8  
7.1  
7.2  
7.3  
7.4  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
 
11  
Handling information. . . . . . . . . . . . . . . . . . . .
 
14  
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
 
1
4  
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
 
1
4  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . .
 
15  
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
 
15  
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1
5  
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1
5  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
 
16  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . .
 
16  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
17  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon Netherlands B.V.
 
2022.  
All rights reserved.  
Date of release: 8 July 2022  
Document identifier: ART1K6FH_1K6FHS_1K6FHG