Ampleon-BLA9H0912L-1200PU
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BLA9H0912L-1200P;
BLA9H0912LS-1200P
LDMOS avionics power transistor
Rev. 1 — 1 November 2018
Product data sheet
1. Product
profile
1.1 General
description
1200 W LDMOS power transistor for avionics applications in the frequency range of
960 MHz to 1215 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 50
μ
s;
δ
= 2 %; I
Dq
= 75 mA; in a class-AB demo
circuit.
Test signal
f
V
DS
(V)
50
P
L
G
p
η
D
(%)
60
(MHz)
(W)
(dB)
19
pulsed RF
1030
1200
1050
pulsed RF at 1 dB
compression
960 to 1215
50
19
57
1.2 Features
and benefits
High efficiency
Excellent ruggedness
Designed for avionics band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
Avionics applications in the frequency range of 960 MHz to 1215 MHz
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
2. Pinning
information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLA9H0912L-1200P (SOT539A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
BLA9H0912LS-1200P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
[1] Connected
to flange.
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLA9H0912L-1200P
–
flanged balanced ceramic package; 2 mounting holes;
SOT539A
4 leads
BLA9H0912LS-1200P –
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Min
–
Max
106
+11
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
V
GS
T
stg
6
65
–
V
+150
225
C
C
[1]
T
j
[1] Continuous
use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
2 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
5. Thermal
characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Z
th(j-mb)
transient thermal impedance from junction
T
case
= 85
C; P
L
= 600 W
to mounting base
t
p
= 32
s;
= 2 %
0.027 K/W
0.036 K/W
0.032 K/W
0.126 K/W
t
p
= 10
s;
= 10 %
t
p
= 64
s;
= 1 %
t
p
= 2.4 ms;
= 6.4 %
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
°
C, per section unless otherwise specified.
Symbol Parameter
Conditions
Min
106
1.5
–
Typ
–
Max Unit
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 4 mA
–
V
V
V
GS(th)
I
DSS
gate-source threshold voltage
drain leakage current
V
DS
= 10 V; I
D
= 400 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
2.0
–
2.5
2.8
A
I
DSX
drain cut-off current
–
60
–
A
V
DS
= 10 V
I
GSS
g
fs
gate leakage current
V
GS
= 11 V; V
DS
= 0 V
–
–
–
–
280 nA
forward transconductance
V
DS
= 10 V; I
D
= 400 mA
3.7
–
S
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 14 A
0.060 –
Table 7.
Test signal: pulsed RF; f = 1030 MHz; t
p
= 50
μ
s;
δ
= 2 %; RF performance at V
DS
= 50 V;
Dq
= 75 mA; T
case
= 25
°
C; unless otherwise specified, in a class-AB production circuit.
RF characteristics
I
Symbol
Parameter
Conditions
Min Typ
Max Unit
G
p
power gain
P
L
= 1200 W
17.8 19
–
–
–
dB
%
D
drain efficiency
input return loss
P
L
= 1200 W
57
60
RL
in
P
L
= 1200 W
P
L
= 1200 W
P
L
= 1200 W
P
L
= 1200 W
–
–
–
–
–
15
0.2
6
dB
P
droop(pulse)
pulse droop power
0.5 dB
t
r
rise time
50
50
–
ns
ns
W
t
f
fall time
6
P
L(2dB)
output power at 2 dB gain compression
1400
7. Test
information
7.1 Ruggedness
in class-AB operation
The BLA9H0912L-1200P and BLA9H0912LS-1200P are capable of withstanding a load
mismatch corresponding to VSWR = 20 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 75 mA; P
L
= 1200 W; t
p
= 50
s;
= 2 %.
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
3 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
7.2 Impedance
information
Table 8.
f
Typical impedance (per section)
[1]
[1]
Z
S
Z
L
(MHz)
950
(
Ω
)
(
Ω
)
0.717
j1.793
0.953
j1.886
1.091
j1.910
1.353
j0.443
1.962
j1.061
0.837
j0.936
0.965
j1.305
1.049
j1.561
1.032
j1.780
1.291
j1.952
1.474
j2.081
1.514
j2.413
1000
1050
1100
1150
1200
[1] Z
S
and Z
L
defined in
Figure 1
.
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLA9H0912L-1200P_LS-1200P
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
4 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
7.3 Test
circuit
150.4 mm
R3
C5
C7
R1
L1
C6
C40
C14
C39
C1
2
C
13
C11
L3
C25
C23
C27
C31
C1
C32
C2
C19
C29
C22
C33
C30
C34
C35
C36
C28
C20
C21
80 mm
C3
H2
C4
H1
L2
C26
C24
C15
L4
R2
Rev 2
C10
C16
C9
C8
C37
C17
C18
C38
amp00779
Printed-Circuit Board (PCB): RO4003;
r
= 3.55; thickness = 0.508 mm; thickness copper plating = 35
m.
See
T
a
ble 9
for a list of components.
Fig 2.
Component layout for application circuit
Table 9.
List of components
See
Figure 2
for component layout.
Component
C1, C2, C3, C4
C5, C8, C13, C17
C6, C9, C12, C16
C7, C10, C11, C15
C14, C18
Description
Value
multilayer ceramic chip capacitor
39 pF
multilayer ceramic chip capacitor
10
F
multilayer ceramic chip capacitor
1 nF
multilayer ceramic chip capacitor
51 pF
Remarks
ATC 100B
Murata: GRM55DR61H106KA88L
ATC 100B
ATC 100B
electrolytic capacitor
100
F
,
6
3 V
C19, C20
multilayer ceramic chip capacitor
0.5 pF
multilayer ceramic chip capacitor
5.6 pF
multilayer ceramic chip capacitor
3.0 pF
ATC 100A
ATC 100A
ATC 100B
ATC 800B
ATC 100B
ATC 100B
ATC 100B
ATC 100B
C21
C22
C23a, C23b, C24a, C24b
multilayer ceramic chip capacitor
5.1 pF
C25, C26, C27, C28
multilayer ceramic chip capacitor
2.4 pF
multilayer ceramic chip capacitor
0.8 pF
multilayer ceramic chip capacitor
1.6 pF
multilayer ceramic chip capacitor
43 pF
C29
C30
C31, C32, C33, C34,
C35, C36
C37, C39
C38, C40
H1, H2
multilayer ceramic chip capacitor
20 nF
multilayer ceramic chip capacitor
1 nF
balun transformer
ATC 200B
ATC 200B
Anaren: 3A412S
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
5 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
Table 9.
List of components
…continued
See
Figure 2
for component layout.
Component
L1, L2
Description
Value
Remarks
inductor
inductor
27 nH
Coilcraft: 1111SQ-27NJEB
L3, L4
1/2 turns, D = 1.5 mm,
8.9 nH
8 mm copper wire
R1, R2
R3
resistor
resistor
5
SMD 0603
5 m
FC4L110R005FER
7.4 Graphical
data
amp00780
amp00781
0.5
80
g
g
a
a
i
i
n
n
c
c
o
o
m
m
p
p
r
r
e
e
s
s
s
s
i
i
o
o
n
n
(dB)
η
D
(%)
-0.5
-1.5
-2.5
60
40
20
0
-3.5
0
500
1000
1500
2000
0
500
1000
1500
2000
P
(W)
P (W)
L
L
V
DS
= 50 V; I
Dq
= 75 mA; t
p
= 50
s;
= 2 %.
V
DS
= 50 V; I
Dq
= 75 mA; t
p
= 50
s;
= 2 %.
Fig 3.
Gain compression as a function of output
power; typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
6 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
amp00782
amp00783
20.5
p
(dB)
1600
L
(W)
G
P
19.5
1200
18.5
17.5
16.5
800
400
0
0
500
1000
1500
2000
0
10
20
30
P (W)
40
P
(W)
L
i
V
DS
= 50 V; I
Dq
= 75 mA; t
p
= 50
s;
= 2 %.
V
DS
= 50 V; I
Dq
= 75 mA; t
p
= 50
s;
= 2 %.
Fig 5.
Power gain as a function of output power;
typical values
Fig 6.
Output power as a function of input power;
typical values
amp00784
amp00785
80
21.5
η
G
p
D
(%)
(dB)
60
40
20
0
20.5
19.5
18.5
17.5
0
500
1000
1500
0
500
1000
1500
P
L
(W)
P (W)
L
V
DS
= 50 V; I
Dq
= 200 mA; t
p
= 2.4 ms;
= 6.4 %.
V
DS
= 50 V; I
Dq
= 200 mA; t
p
= 2.4 ms;
= 6.4 %.
Fig 7.
Drain efficiency as a function of output power;
typical values
Fig 8.
Power gain as a function of output power;
typical values
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
7 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
amp00786
amp00787
1600
L
(W)
22
20
18
16
14
12
70
60
50
40
30
20
P
G
η
D
(%
)
)
p
η
D
(dB)
1200
G
p
800
400
0
0
5
10
15
P (W)
20
950
1000
1050
1100
1150
1200
1250
f (MHz)
i
V
DS
= 50 V; I
Dq
= 200 mA; t
p
= 2.4 ms;
= 6.4 %.
V
DS
= 51.6 V; I
Dq
= 100 mA; P
L
= P
L(1dB)
(
1050 W);
t
p
= 50
s;
= 5 %.
Performance measured in a dedicated broadband
fixture.
Fig 9.
Output power as a function of input power;
typical values
Fig 10.
Power gain and drain efficiency as function of
frequency; typical values
BLA9H0912L-1200P_LS-1200P
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
8 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
8. Package
outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
U
1
B
1
q
C
w
H
M
M
C
2
1
c
1
3
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53
17.12
3.48 3.30 2.26
25.53
0.18
0.10
1.75
41.28 10.29
41.02 10.03
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
13.72
mm
3.05 2.01
9.30 9.27 1.50
16.10 25.27
2.97
0.465
0.455
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674
0.366 0.365 0.059 0.634 0.995 0.117
0.137 0.130 0.089
0.405
0.007
0.004
1.005
1.625
inches
Note
0.540
0.120 0.079
1.615 0.395
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 11.
Package outline SOT539A
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
9 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
U
2
E
H
1
L
3
4
b
w
3
Q
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81
0.18 31.55
31.52 9.5
nom
9.53
1.75 17.12
25.53 3.48
2.26 32.39
10.29
mm
13.72
0.54
0.25 0.25
0.01 0.01
min 4.2 11.56
0.10 30.94
30.96 9.3
9.27
1.50 16.10
25.27 2.97
2.01 32.13
10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
inches
Note
0.059 0.634 0.995 0.117 0.079 1.265 0.395
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 12.
Package outline SOT539B
BLA9H0912L-1200P_LS-1200P
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
10 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
9. Handling
information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
Table 10.
ESD sensitivity
ESD model
Class
C2A
[1]
2
[2]
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
[1] CDM
classification C2A is granted to any part that passes after exposure to an ESD pulse of 500
V
.
[2] HBM
classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000
V
.
10. Abbreviations
Table 11.
Abbreviations
Acronym
ESD
Description
ElectroStatic Discharge
LDMOS
MTF
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
RoHS
SMD
Restriction of Hazardous Substances
Surface Mounted Device
VSWR
Voltage Standing Wave Ratio
11. Revision
history
Table 12.
Revision history
Document ID
Release date
20181101
Data sheet status
Change notice
Supersedes
BLA9H0912L-1200P_LS-1200P v.1
Product data sheet
–
–
BLA9H0912L-1200P_LS-1200P
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
11 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
T
e
rms and conditions of commercial sale
of Ampleon.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use —
Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
12 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
BLA9H0912L-1200P_LS-1200P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 1 November 2018
13 of 14
BLA9H0912L(S)-1200P
LDMOS avionics power transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
3
Ruggedness in class-AB operation. . . . . . . . . .
3
Impedance information . . . . . . . . . . . . . . . . . . .
4
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Graphical data
. . . . . . . . . . . . . . . . . . . . . . . . .
6
7.1
7.2
7.3
7.4
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
9
Handling information. . . . . . . . . . . . . . . . . . . .
11
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
12
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
13
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.
V
.
2018.
All rights reserved.
Date of release: 1 November 2018
Document identifier: BLA9H0912L-1200P_LS-1200P
