Ampleon-BLC9G10XS-120AZ
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BLC9G10XS-120A
Power LDMOS transistor
Rev. 1 — 29 November 2018
Product data sheet
1. Product
profile
1.1 General
description
120 W LDMOS power transistor for base station applications at frequencies from
920 MHz to 960 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in an asymmetrical Doherty application demo circuit.
Test signal
f
I
Dq
V
DS
P
L(AV)
G
p
η
D
ACPR
(dBc)
28
[1]
(MHz)
(mA)
150
(V)
(W)
(dB)
20
(%)
50
1-carrier W-CDMA
925 to 960
28
18
[1]
T
e
st
signal: 3GPP test model 1; 64 DPCH; PAR = 10.5 dB at 0.01 % probability on CCD
F
.
1.2 Features
and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
920 MHz to 960 MHz frequency range
BLC9G10XS-120A
Power LDMOS transistor
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
drain1
drain2
gate1
gate2
source
1
1
2
2
3
3
5
4
4
[1]
5
2
3
4
sym117
[1] Connected
to flange.
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLC9G10XS-120A
–
air cavity plastic earless flanged package; 4 leads
SOT1273-1
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
–
V
GS
T
stg
0.5 +11
V
65
+150
225
C
C
[1]
T
j
–
[1] Continuous
use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal
characteristics
Table 5.
Symbol Parameter
R
th(j-c)
thermal resistance from junction to case
T
case
= 80
C; I
Dq
= 120 mA;
Thermal characteristics
Conditions
Typ
Unit
V
GS(am)peak
= 0.8 V
P
L
= 18 W
0.349 k/W
0.301 k/W
P
L
= 28.2 W
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
2 of 14
BLC9G10XS-120A
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
°
C, unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Main device
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 0.4 mA
65
–
–
V
V
GS(th)
V
GSq
I
DSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
V
DS
= 10 V; I
D
= 40 mA
1.5
2.0
2.5
V
V
DS
= 28 V; I
D
= 240 mA
1.5
2.17 2.5
V
V
DS
= 28 V
–
–
–
1.4
–
A
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 3.75 V;
8
V
DS
= 10 V
I
GSS
g
fs
gate leakage current
V
GS
= 11 V
–
–
–
–
140
nA
S
forward transconductance
V
DS
= 10 V; I
D
= 2 A
2.91
326
–
–
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.4 A
m
Peak device
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 0.81 mA
65
–
–
V
V
GS(th)
V
GSq
I
DSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
V
DS
= 10 V; I
D
= 81mA
1.5
1.9
2.0
–
2.5
2.5
1.4
–
V
V
DS
= 28 V; I
D
= 486 mA
1.5
V
V
DS
= 28 V
–
–
A
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 3.75 V;
15.7
V
DS
= 10 V
I
GSS
g
fs
gate leakage current
V
GS
= 11 V
–
–
–
–
140
nA
S
forward transconductance
V
DS
= 10 V; I
D
= 2 A
5.75
165
–
–
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.4 A
m
Table 7.
RF characteristics
T
e
st signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f
1
= 927.5 MHz; f
3
= 957.5 MHz; RF performance at V
DS
= 28 V; I
Dq
= 120 mA;
V
GS(amp)peak
= 0.8 V; T
case
= 25
°
C; unless otherwise specified; in a Doherty production circuit.
Symbol
Parameter
Conditions
Min
19.8
44
–
Typ
21
Max
–
Unit
dB
G
p
power gain
P
L(AV)
= 18 W
P
L(AV)
= 18 W
P
L(AV)
= 18 W
P
L(AV)
= 18 W
D
drain efficiency
input return loss
adjacent channel power ratio
49
–
%
RL
in
ACPR
12
32
8
27
dB
–
dBc
Table 8.
RF characteristics
T
e
st signal: pulsed CW; t
p
= 100
μ
s;
δ
= 10 %; f = 960 MHz; RF performance at V
DS
= 28 V;
Dq
= 120 mA (main); V
GS(amp)peak
= 0.8 V; T
case
= 25
°
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at frequencies from 925 MHz to 960 MHz
I
Symbol Parameter
Conditions Min
Typ Max Unit
P
L(3dB)
output power at 3 dB gain compression
125 140
–
W
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
3 of 14
BLC9G10XS-120A
Power LDMOS transistor
7. Test
information
7.1 Ruggedness
in Doherty operation
The BLC9G10XS-120A is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V; P
L
= 100 W (CW); f = 925 MHz; tested on the Doherty
development circuit.
7.2 Impedance
information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; I
Dq
= 240 mA (main); V
DS
= 28 V; typical values unless
otherwise specified.
[1]
[1]
[2]
[2]
[3]
f
Z
S
(
Ω
)
Z
L
P
L
η
D
G
p
(MHz)
(
Ω
)
(W)
(%)
(dB)
Maximum power load
920
940
960
1.15
j5.18
4.33 + j1.33
4.33 + j1.33
3.93 + j1.22
66.0
65.0
63.0
67.8
67.6
64.8
22.7
23.0
22.8
1.59
j5.92
2.56
j6.94
Maximum drain efficiency load
920
940
960
1.15
j5.18
1.59
j5.92
2.56
j6.94
3.89 + j4.44
3.09 + j4.94
3.24 + j4.34
46.8
38.0
41.7
78.4
78.5
75.7
25.1
25.8
25.3
[1] Z
S
and Z
L
defined in
Figure 1
.
[2] At
3 dB gain compression.
[3] At
6 dB OBO.
Table 10.
Typical impedance of peak device
Measured load-pull data of peak device; I
Dq
= 480 mA (peak); V
DS
= 28 V; typical values unless
otherwise specified.
[1]
[1]
[2]
[2]
[3]
f
Z
S
(
Ω
)
Z
L
P
L
η
D
G
p
(MHz)
(
Ω
)
(W)
(%)
(dB)
Maximum power load
920
940
960
1.81
j5.01
2.32
j0.81
2.40
j0.27
2.32
j0.81
149.0
150.3
141.0
70.2
73.55
69.5
22.4
22.88
22.7
2.05
j5.52
2.78
j6.29
Maximum drain efficiency load
920
940
960
1.81
j5.01
2.05
j5.52
2.78
j6.29
2.30 + j1.69
2.32 + j1.69
2.16 + j1.33
79.4
97.7
91.2
84.3
84.5
84.0
26.2
25.8
25.8
[1] Z
S
and Z
L
defined in
Figure 1
.
[2] At
3 dB gain compression.
[3] At
6 dB OBO.
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
4 of 14
BLC9G10XS-120A
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test
circuit
50 mm
50 mm
C25
C2
C1
C3
C13
R1
R3
C14
C15
C17
C18
C12
C5
C9
R2
C4
C16
C19
C6
77 mm
X1
C7
C20
C21
C8
C22
C23
C24
C11
C10
C26
amp00736
Printed-Circuit Board (PCB): RO4350B:
r
=
3.5
; thickness = 0.508 mm; thickness copper
plating = 35
m. See
T
a
ble 11
for a list of components.
Fig 2.
Component layout
Table 11.
List of components
See
Figure 2
for component layout.
Component
Description
Value
Remarks
C1, C10, C13,
C14, C23, C24
multilayer ceramic chip capacitor
4.7
F
,
1
00 V
Murata 1210
[1]
C2, C3, C4, C7,
multilayer ceramic chip capacitor
100 pF
C11, C12, C22
ATC600F
[1]
[1]
[1]
[1]
[1]
C5
multilayer ceramic chip capacitor
6.8 pF
multilayer ceramic chip capacitor
3.6 pF
multilayer ceramic chip capacitor
3.0 pF
multilayer ceramic chip capacitor
4.3 pF
multilayer ceramic chip capacitor
33 pF
ATC600F
ATC600F
ATC600F
ATC600F
ATC600F
C6
C8, C15
C9, C19
C16
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
5 of 14
BLC9G10XS-120A
Power LDMOS transistor
Table 11.
List of components
…continued
See
Figure 2
for component layout.
Component
C17, C18
C20
Description
Value
Remarks
ATC600F
ATC600F
ATC600F
[1]
[1]
[1]
multilayer ceramic chip capacitor
3.9 pF
multilayer ceramic chip capacitor
2.0 pF
multilayer ceramic chip capacitor
6.2 pF
C21
C25, C26
R1, R3
R2
electrolytic capacitor
chip resistor
1000
F
,
1
00 V
5.1
50
2 dB
SMD 0805
chip resistor
SMD 0805
X1
asymmetric coupler
RN2 CMX09Q02
[1]
Murata or capacitor of same quality
7.4 Graphical
data
All data measured on the Doherty development circuit.
7.4.1 CW
amp00737
amp00738
25
23
21
19
17
15
80
70
60
50
40
30
40
30
20
10
0
G
η
RL
in
(dB)
(1)
(2)
(3)
p
D
(1)
(2)
(3)
(dB)
(%
)
)
G
p
(3
)
)
(2
)
)
(1
)
)
η
D
34
38
42
46
50
(dBm)
54
34
38
42
46
50
54
P
P
(dBm)
L
L
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8
V
.
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V;
t
p
= 100
s;
= 10 %.
(1) f
= 925 MHz
(2) f
= 943MHz
(3) f
= 960 MHz
(1) f
= 925 MHz
(2) f
= 943 MHz
(3) f
= 960 MHz
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
Fig 4.
Input return loss as a function of output
power; typical values
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
6 of 14
BLC9G10XS-120A
Power LDMOS transistor
7.4.2 Pulsed
CW
amp00739
amp00740
25
23
21
19
17
15
80
70
60
50
40
30
40
30
20
10
0
G
η
RL
in
(dB)
(1)
p
D
(1)
(2)
(3)
(2)
(3)
(dB)
(%
)
)
G
p
(3
)
)
(2
)
)
(1
)
)
η
D
34
38
42
46
50
(dBm)
54
34
38
42
46
50
54
P
P
(dBm)
L
L
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V;
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V;
t
p
= 100
s;
= 10 %.
t
p
= 100
s;
= 10 %.
(1) f
= 925 MHz
(2) f
= 943MHz
(3) f
= 960 MHz
(1) f
= 925 MHz
(2) f
= 943 MHz
(3) f
= 960 MHz
Fig 5.
Power gain and drain efficiency as function of
output power; typical values
Fig 6.
Input return loss as a function of output
power; typical values
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
7 of 14
BLC9G10XS-120A
Power LDMOS transistor
7.4.3 1-Carrier
W-CDMA
amp00741
amp00742
25
23
21
19
17
15
80
70
60
50
40
30
24
20
16
12
8
G
η
RL
in
(dB)
(1)
(2)
(3)
p
D
(dB)
(%
)
)
(1)
(2)
(3)
G
p
(3)
(2
)
)
η
(1
)
)
D
36
38
40
42
44
46
P
48
50
52
36
38
40
42
44
46
48
(dBm)
L(AV)
50
52
(dBm)
P
L(AV)
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V; 46 %
clipping.
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V; 46 %
clipping.
(1) f
= 925 MHz
(2) f
= 943 MHz
(3) f
= 960 MHz
(1) f
= 925 MHz
(2) f
= 943MHz
(3) f
= 960 MHz
Fig 7.
Power gain and drain efficiency as function of
average output power; typical values
Fig 8.
Input return loss as a function of average
output power; typical values
amp00743
amp00744
-20
5M
(dBc
)
)
-20
10M
(dBc)
ACPR
ACPR
-25
-30
-40
-50
-60
(1)
-30
-35
-40
-45
-50
(2)
(3)
(1
)
)
(2
)
)
(3
)
)
36
38
40
42
44
46
P
48
50
52
36
38
40
42
44
46
48
(dBm)
L(AV)
50
52
(dBm)
P
L(AV)
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V; 46 %
clipping.
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V; 46 %
clipping.
(1) f
= 925 MHz
(2) f
= 943 MHz
(3) f
= 960 MHz
(1) f
= 925 MHz
(2) f
= 943 MHz
(3) f
= 960 MHz
Fig 9.
Adjacent channel power ratio (5 MHz) as a
function of average output power; typical
values
Fig 10.
Adjacent channel power ratio (10 MHz) as a
function of average output power; typical
values
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
8 of 14
BLC9G10XS-120A
Power LDMOS transistor
7.4.4 2-
Tone
VBW
amp00745
0
IMD
(dBc)
(1)
(2)
-20
IMD3
-40
-60
(1)
(2)
IMD5
IMD7
(2)
-80
(1)
-100
2
3
1
10
10
10
carrier spacing (MHz)
V
DS
= 28 V; I
Dq
= 120 mA; V
GS(amp)peak
= 0.8 V; f
c
= 940 MHz.
(1) IMD
low
(2) IMD
high
Fig 11.
VBW capability on Doherty development RF test circuit
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
9 of 14
BLC9G10XS-120A
Power LDMOS transistor
8. Package
outline
Air cavity plastic earless flanged package; 4 leads
SOT1273-1
D
F
A
5
w
1
B
D
1
B
v
A
U
1
H
1
c
1
2
y
U
2
H
E
1
E
A
3
4
w
2
B
Q
b
e
0
5
10 mm
Q
(1)
scale
Dimensions
y
Unit
A
b
c
D
D
1
E
E
1
e
F
H
H
1
U
1
U
2
v
w
1
w
2
max 4.01
3.91 0.18
20.42 20.37
9.80 9.75
1.14 19.53
12.83 1.68
20.70 9.91 0.50
0.50 0.50 0.10
0.94 19.33
12.57 1.45
20.50 9.70
mm nom
8.89
min 3.40
3.71 0.13
20.12 20.17
9.50 9.55
Note:
1. Dimension Q is measured at 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
sot1273-1_po
References
Outline
European
projection
Issue date
17-01-12
version
IEC
JEDEC
JEITA
SOT1273-1
Fig 12.
Package outline SOT1273-1
BLC9G10XS-120A
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
10 of 14
BLC9G10XS-120A
Power LDMOS transistor
9. Handling
information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
Table 12.
ESD sensitivity
ESD model
Class
C2A
[1]
2
[2]
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
[1] CDM
classification C2A is granted to any part that passes after exposure to an ESD pulse of 500
V
.
[2] HBM
classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000
V
.
10. Abbreviations
Table 13.
Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
LDMOS
MTF
Laterally Diffused Metal Oxide Semiconductor
Median Time to Failure
OBO
Output Back Off
PAR
Peak-to-Average Ratio
RoHS
SMD
Restriction of Hazardous Substances
Surface Mounted Device
VBW
Video BandWidth
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision
history
Table 14.
Revision history
Document ID
Release date
20181129
Data sheet status
Change notice
Supersedes
BLC9G10XS-120A v.1
Product data sheet
–
–
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
11 of 14
BLC9G10XS-120A
Power LDMOS transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
T
e
rms and conditions of commercial sale
of Ampleon.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use —
Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
12 of 14
BLC9G10XS-120A
Power LDMOS transistor
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
BLC9G10XS-120A
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 1 — 29 November 2018
13 of 14
BLC9G10XS-120A
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
2
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
7.1
7.2
7.3
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
4
Ruggedness in Doherty operation
. . . . . . . . . .
4
Impedance information . . . . . . . . . . . . . . . . . . .
4
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Graphical data
. . . . . . . . . . . . . . . . . . . . . . . . .
6
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . .
8
2-
T
o
ne VBW . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
7.4
7.4.1
7.4.2
7.4.3
7.4.4
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
10
Handling information. . . . . . . . . . . . . . . . . . . .
11
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
12
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
13
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.
V
.
2018.
All rights reserved.
Date of release: 29 November 2018
Document identifier: BLC9G10XS-120A
